BTC4505M3 [CYSTEKEC]
High Voltage NPN Epitaxial Planar Transistor; 高电压NPN外延平面晶体管
| 型号： | BTC4505M3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | High Voltage NPN Epitaxial Planar Transistor |
| 文件： | 总5页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 1/5
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505M3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
• Complementary to BTA1759M3
• Pb-free package
Symbol
Outline
BTC4505M3
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
400
400
V
V
6
V
300
mA
mW
°C
°C
Power Dissipation
Pd
600
Junction Temperature
Storage Temperature
Tj
Tstg
150
-55~+150
BTC4505M3
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 2/5
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
400
-
-
V
IC=50µA, IE=0
400
-
-
V
IC=1mA, IB=0
6
-
-
-
V
IE=50µA, IC=0
VCB=400V, IE=0
VEB=6V, IC=0
-
10
10
0.5
1.5
270
-
µA
µA
V
IEBO
-
-
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
-
0.1
IC=10mA, IB=1mA
IC=10mA, IB=1mA
-
V
-
82
-
-
20
7
VCE=10V, IC=10mA
MHz
pF
VCE=10V, IC=10mA, f=100MHz
-
-
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
Package
Shipping
SOT-89
BTC4505M3
1000 pcs / Tape & Reel
(Pb-free )
BTC4505M3
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
100
10
10000
1000
100
VCESAT@IC=10IB
HFE@VCE=10V
10
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Collector Current ---IC(mA)
Power Derating Curve
Saturation Voltage vs Collector Current
700
10000
1000
100
600
500
400
300
200
100
0
VBESAT@IC=10IB
0
50
100
150
200
0.1
1
10
100
1000
Ambient Temperature---TA(℃ )
Collector Current--- IC(mA)
BTC4505M3
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 4/5
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
BTC4505M3
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 5/5
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
3D
H
C
D
B
E
Style: Pin 1. Base 2. Collector 3. Emitter
I
F
G
3-Lead SOT-89 Plastic
Surface Mounted Package
*: Typical
Millimeters
Inches
Min. Max.
Millimeters
Inches
Min. Max.
DIM
DIM
Min.
Max.
4.60
4.25
1.70
2.60
0.51
Min.
1.48
2.96
1.40
0.35
Max.
1.527
3.04
1.60
0.41
A
B
C
D
E
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
4.40
4.05
1.50
2.40
0.36
F
G
H
I
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4505M3
CYStek Product Specification
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