MTA050B01DFA6 [CYSTEKEC]
Dual P-Channel Enhancement Mode MOSFET;
| 型号： | MTA050B01DFA6 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Dual P-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 1/10
Dual P-Channel Enhancement Mode MOSFET
MTA050B01DFA6
BVDSS
-14V
-4.3A
ID @VGS=-4.5 V, TA=25°C
39mΩ(TYP.)
55mΩ(TYP.)
69mΩ(TYP.)
RDSON@VGS=-4.5V, ID=-3.6A
RDSON@VGS=-2.5V, ID=-3.2A
RDSON@VGS=-1.8V, ID=-1.0A
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN2×2-6L
MTA050B01DFA6
G：Gate S：Source D：Drain
Ordering Information
Device
Package
Shipping
DFN2×2-6L
(Pb-free lead plating and halogen-free package)
MTA050B01DFA6-0-T1-G
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
BVDSS
VGS
Limits
Unit
V
Drain-Source Breakdown Voltage
-14
±8
Gate-Source Voltage
-4.3
Continuous Drain Current @TA=25 °C, VGS=-4.5V (Note 1)
Continuous Drain Current @TA=70 °C, VGS=-4.5V (Note 1)
Pulsed Drain Current (Note 2)
ID
A
-3.4
IDM
PD
-26
1.38
0.01
W
W / °C
°C
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec
2.Pulse width limited by maximum junction temperature
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
75
90 (Note )
°C/W
Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 195°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
-14
-
-5
-0.8
-
-
-
-
-
V
VGS=0V, ID=-250μA
-
-
-
-
-
-
-
mV/°C Reference to 25°C, ID=-250μA
V
nA
-1.2
±100
-1
-25
55
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-12V, VGS=0V
VDS=-12V, VGS=0V, Tj=70°C
VGS=-4.5V, ID=-3.6A
VGS=-2.5V, ID=-3.2A
IGSS
IDSS
μA
39
55
77
*RDS(ON)
*GFS
mΩ
-
-
69
-
-
VGS=-1.8V, ID=-1.0A
VDS=-5V, ID=-3A
7.4
S
Dynamic
Ciss
-
-
-
-
-
-
-
678
130
123
11.6
22.8
56
-
-
-
-
-
-
-
pF
ns
VDS=-10V, VGS=0V, f=1MHz
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
Ω
VDS=-10V, ID=-1A, VGS=-4.5V, RG=6
33.2
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 3/10
*Qg
*Qgs
*Qgd
Rg
-
-
-
-
8.8
0.9
2.7
15
-
-
-
-
nC
VDS=-10V, ID=-1.5A, VGS=-4.5V
f=1MHz
Ω
Source-Drain Diode
*VSD
*trr
*Qrr
-
-
-
-0.9
24.7
4.8
-1.2
-
-
V
ns
nC
VGS=0V, IS=-3.4A
IF=-3.4A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 4/10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
1.4
1.2
1
20
16
12
8
-VGS=8V,7V,6V,5V,4V,3V,2.5V
-VGS=2V
0.8
0.6
0.4
-
ID=-250μA,
VGS=0V
4
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
1.2
Tj=25°C
VGS=0V
1
0.8
0.6
0.4
0.2
VGS=-1.8V
VGS=-2.5V
100
Tj=150°C
VGS=-4.5V
10
0
2
4
6
8
10
0.01
0.1
1
10
-ID, Drain Current(A)
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
250
200
150
100
50
1.6
ID=-3.6A
1.4
1.2
1
0.8
0.6
0.4
VGS=-4.5V, ID=-3.6A
RDS(ON)@Tj=25°C : 39mΩ typ.
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 5/10
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
ID=-1mA
Ciss
1000
0.8
0.6
0.4
C
oss
ID=-250μA
Crss
100
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
10
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
50
40
30
20
10
0
8
7
6
5
4
3
2
1
0
TJ(MAX)=150°C
TA=25°C
θ
R
JA=90°C/W
VDS=-10V
ID=-1.5A
0
2
4
6
8
10 12 14 16 18 20
0.001
0.01
0.1 1
Pulse Width(s)
10
100
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
5
4.5
4
RDS(ON)
Limited
μ
100 s
10
1
3.5
3
1ms
2.5
2
10ms
100ms
1.5
1
TA=25°C, Tj=150°C,
JA
0.1
0.01
θ
GS=-4.5V, R =90°C/W
V
DC
JA
θ
TA=25°C, VGS=-4.5V, R =90°C/W
Single Pulse
0.5
0
0.01
0.1
1
10
100
25
50
75
100
Tj, Junction Temperature(°C)
125
150
175
-VDS, Drain-Source Voltage(V)
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 6/10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Typical Transfer Characteristics
20
10
1
VDS=5V
16
12
8
0.1
VDS=-5V
Pulsed
Ta=25°C
4
0.01
0
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
JA
1.Rθ (t)=r(t)*Rθ
JA
0.1
0.1
1
2.Duty Factor, D=t /t
2
JM
A
DM
3.T -T =P *Rθ (t)
JA
0.05
=
4.Rθ 90°C/W
JA
0.02
0.01
0.01
Single Pulse
1.E-02
0.001
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 7/10
Reel Dimension
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 8/10
Carrier Tape Dimension
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA050B01DFA6
CYStek Product Specification
Spec. No. : C101DFA6
Issued Date : 2018.05.03
Revised Date :
CYStech Electronics Corp.
Page No. : 10/10
DFN2×2-6L Dimension
Marking:
Device Code
Date Code
A5TB
Style:
Pin 1. Source1 (S1)
Pin 2. Gate 1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
6-Lead DFN2×2-6L Plastic
Surface Mounted Package
CYStek Package Code: DFA6
Millimeters
DIM
Inches
Millimeters
Inches
Min.
DIM
Min.
0.700
0.000
Max.
0.800
0.050
Min.
0.028
0.000
Max.
0.031
0.002
Min.
Max.
0.720
-
Max.
0.028
-
A
A1
A3
D
E1
k
b
e
L
0.520
0.200
0.250
0.020
0.008
0.010
0.203 REF
0.008 REF
0.350
0.014
1.900
1.900
0.900
2.100
2.100
1.100
0.075
0.075
0.035
0.083
0.083
0.043
0.650 TYP
0.026 TYP
E
D1
0.200
0.300
0.008
0.012
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead :Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA050B01DFA6
CYStek Product Specification
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