MTB020N06KE3 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB020N06KE3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总8页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 1/ 8
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID@VGS=10V, TC=25°C
60V
41A
8.4A
MTB020N06KE3
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=15A
12.7 mΩ(typ)
17.8 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• RoHS compliant package
Symbol
Outline
MTB020N06KE3
TO-220
G D S
G：Gate D：Drain S：Source
Ordering Information
Shipping
Device
Package
TO-220FP
(RoHS compliant)
MTB020N6KE3-0-UB-X
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB020N06KE3
CYStek Product Specification
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
VGS
60
±20
41*
25.9*
8.4
6.7
120*
30
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current
(Note 1)
(Note 1)
(Note 2)
(Note 2)
ID
IDSM
A
IDM
IAS
Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, ID=18 Amps,
VDD=30V
Repetitive Avalanche Energy
EAS
EAR
PD
162
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
W
5
50
20
2.1
1.3
TC=25°C
TC=100°C
TA=25°C
Power Dissipation
PDSM
TA=70°C
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TL
300
260
°C
TPKG
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.5
60
Unit
°C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and low duty cycles
°
to keep initial TJ=25 C.
4. 100% tested by condition of VDD=15V, ID=2.4A, L=1mH, VGS=10V.
MTB020N06KE3
CYStek Product Specification
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 3/ 8
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
60
-
1
-
-
-
-
-
-
-
50
-
12.8
-
-
-
2.5
-
10
1
5
V
mV/°C
V
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
*GFS
IGSS
S
±
±
VGS= 16V
μA
-
-
VDS =60V, VGS =0V
VDS =48V, VGS =0V, Tj=55°C
VGS =10V, ID=20A
IDSS
12.7
17.8
17
25
Ω
m
*RDS(ON)
VGS =4.5V, ID=15A
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
18.3
2.1
7.1
-
-
-
-
-
-
-
-
-
-
nC
VDD=48V, ID=20A,VGS=10V
VDD=30V, ID=20A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
9.2
17.2
29.4
9.4
680
115
58
ns
pF
A
Ω
RG=1
VGS=0V, VDS=30V, f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
41
120
1.2
-
0.81
13.7
9.3
V
ns
nC
IS=8A, VGS=0V
VGS=0V, IF=8A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB020N06KE3
CYStek Product Specification
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 4/ 8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
100
10V,9V,8V,7V,6V
90
80
70
60
50
40
30
20
10
0
5V
4V
0.8
0.6
0.4
3.5V
μ
ID=250 A,
VGS=0V
VGS
=
3V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
2
4
6
DS, Drain-Source Voltage(V)
8
10
V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
10
1
VGS=4V
1.0
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
VGS=4.5V
VGS=10V
0.1
1 10
ID, Drain Current(A)
100
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
70
60
50
40
30
20
10
0
2.4
VGS=10V, ID=20A
RDS(ON)@Tj=25°C : 12.7mΩ typ.
ID=20A
2.0
1.6
1.2
0.8
0.4
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB020N06KE3
CYStek Product Specification
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1.0
0.8
0.6
0.4
ID=1mA
Ciss
1000
C
oss
100
10
Crss
μ
ID=250 A
f=1MHz
5
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
ID=20A
8
6
4
2
0
VDS=30V
1
VDS=48V
VDS=10V
Pulsed
0.1
0.01
Ta=25°C
0
2
4
6
8
10 12 14 16 18 20
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
50
45
40
35
30
25
20
15
10
5
1000
100
10
1ms
100μs 10μs
RDS(ON)
Limited
10ms
100ms
TC=25°C, Tj(max)=150°C
θ
1
θ
Tj(max)=150°C,R JC=2.5°C/W,
VGS=10V,R JC=2.5°C/W
DC
VGS=10V, Single Pulse
Single Pulse
0
0.1
25
50
75
100
125
150
175
0.1
1
10
100
V
DS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTB020N06KE3
CYStek Product Specification
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 6/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Case
100
90
80
70
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
VDS=10V
TJ(MAX)=150°C
TC=25°C
R
θ
JC=2.5°C/W
0
1E-05 0.0001 0.001 0.01
Pulse Width(s)
0.1
1
10
0
1
2
3
4
GS, Gate-Source Voltage(V)
5
6
V
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
θ
θ
JC
1.R JC(t)=r(t)*R
0.05
2.Duty Factor, D=t1/t2
θ
3.TJM-TC=PDM*R JC(t)
0.02
0.01
θ
4.R JC=2.5°C/W
0.01
0.001
Single Pulse
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB020N06KE3
CYStek Product Specification
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 7/ 8
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N06KE3
CYStek Product Specification
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 8/ 8
CYStech Electronics Corp.
TO-220 Dimension
Marking:
4
B020
N06K
□□□□
Device Name
Date Code
1 2 3
3-Lead TO-220 Plastic Package
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
CYStek Package Code: E3
*: Typical
Millimeters
Inches
Min.
Millimeters
Min. Max.
2.540*
4.980
2.650
7.900
0.000
Inches
DIM
DIM
Min.
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
Min.
Max.
A
A1
b
b1
c
c1
D
E
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.950
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
e
e1
F
H
h
L
L1
V
0.100*
5.180
2.950
8.100
0.300
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
12.900 13.400
2.850
3.250
7.500 REF
0.295 REF
Φ
12.950
0.510
E1
12.650
0.498
3.400
3.800
0.134
0.150
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB020N06KE3
CYStek Product Specification
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