MTB050P03KN3-0-T1-G [CYSTEKEC]
-30V P-Channel Enhancement Mode MOSFET;
| 型号： | MTB050P03KN3-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | -30V P-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
-30V P-Channel Enhancement Mode MOSFET
MTB050P03KN3
BVDSS
-30V
-3.8A
ID @ VGS=-10V, T =25°C
A
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-4.5V,ID=-3A
51.3mΩ(typ)
67.5mΩ(typ)
Features
• For load switch application only
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• ESD protected gate , HBM≥5kV
• Pb-free lead plating package
Symbol
Outline
SOT-23
MTB050P03KN3
D
S
G：Gate S：Source D：Drain
G
Ordering Information
Device
Package
SOT-23
Shipping
MTB050P03KN3-0-T1-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Limits
-30
±20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
-3.8
-3.0
-14.8
5000
Continuous Drain Current @ TA=25°C , VGS=-10V (Note 4)
Continuous Drain Current @ TA=70°C, VGS=-10V (Note 4)
Pulsed Drain Current (Notes 1, 2)
ID
A
IDM
VESD
ESD susceptibility
(Note 3)
V
PD
1.38
W
Maximum Power Dissipation (Note 4)
Linear Derating Factor
0.01
W/°C
°C
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Human body model, 1.5kΩ in series with 100pF
4. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Thermal Performance
Parameter
Symbol
RθJA
Limit
90
Unit
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Thermal Resistance, Junction-to-Case
°C/W
RθJA
45
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
-30
-
-
-
V
V/°C
V
VGS=0V, ID=-250μA
Reference to 25°C, ID=-250μA
VDS=VGS, ID=-250μA
-
-1
-
-
-
0.03
-
-
-
-
-2.5
20
-1
-10
68
±
±
IGSS
VGS= 16V, VDS=0V
μA
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V (Tj=70°C)
VGS=-10V, ID=-4A
IDSS
-
-
51.3
67.5
*RDS(ON)
mΩ
88
VGS=-4.5V, ID=-3A
*GFS
-
5.4
-
S
VDS=-10V, ID=-3A
Source-Drain Diode
*VSD
Trr
Qrr
-
-
-
-0.79
10.6
5.5
-1
-
-
V
ns
nC
VGS=0V, IS=-1A
VGS=0V, IF=-4A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Recommended Soldering Footprint
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
20
16
12
8
1.2
1.1
1
-VGS=10V, 9V, 8V, 7V, 6V,5V,4V
3.5V
0.9
0.8
ID=-250μA,
VGS=0V
-VGS=3V
4
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.4
VGS=0V
1.2
1
Tj=25°C
0.8
0.6
0.4
0.2
-VGS=4.5V
-VGS=10V
Tj=150°C
0
2
4
6
8
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=-10V, ID=-4A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
1.8
360
320
280
240
200
160
120
80
1.6
1.4
1.2
1
ID=-4A
0.8
0.6
0.4
ID=-3A
RDS(ON)@Tj=25°C : 51.3 mΩ typ.
40
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Maximum Safe Operating Area
1.4
1.2
1
100
10
ID=-1mA
RDS(ON)
Limited
100μs
1ms
1
10ms
0.8
0.6
0.4
100ms
TA=25°C, Tj=150°C,
θ
GS=-10V, R JA=90°C/W
ID=-250μA
0.1
0.01
V
1s
Single Pulse
DC
-75 -50 -25
0
25 50 75 100 125 150 175
0.01
0.1
1
10
100
Tj, Junction Temperature(°C)
-VDS, Drain-Source Voltage(V)
Maximum Drain Current vs JunctionTemperature
Typical Transfer Characteristics
4.5
4
20
16
12
8
-VDS=10V
3.5
3
2.5
2
1.5
1
4
θJA
TA=25°C, VGS=-10V, R =90°C/W
0.5
0
0
25
50
75
Tj, Junction Temperature(°C)
100
125
150
175
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Ambient
(Note 1 on page 2)
10
1
50
40
30
20
10
0
TJ(MAX)=150°C
TA=25°C
θ
R
JA=90°C/W
0.1
VDS=-10V
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1 1
Pulse Width(s)
10
100
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Power Derating Curve
1.6
1.4
1.2
1
Mounted on FR-4 board
²
with 1 in pad area
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
TA, Ambient Temperature(℃)
Transient Thermal Response Curves
1
D=0.5
JA
1.Rθ (t)=r(t)*Rθ
JA
0.2
0.1
1
2.Duty Factor, D=t /t
2
JM
A
DM
3.T -T =P *Rθ (t)
JA
=90
JA
4.Rθ
°C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
8 minutes max.
6 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB050P03KN3
CYStek Product Specification
Spec. No. : C017N3
Issued Date : 2018.03.16
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOT-23 Dimension
Marking:
Date Code
Device Code
B5PT
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
3.04
1.40
1.30
0.50
2.30
0.10
Min.
Max.
Min.
Max.
0.20
0.67
1.15
2.55
0.65
0.50
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0551
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032
0.0118
0.0335
0.0830
0.0098
0.0118
0.0079
0.0266
0.0453
0.1004
0.0256
0.0197
0.08
0.30
0.85
2.10
0.25
0.30
L1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB050P03KN3
CYStek Product Specification
相关型号：
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