MTE013N12RH8-0-T6-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE013N12RH8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：871K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
BVDSS
120V
40A
MTE013N12RH8
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
13.4A
10 mΩ
VGS=10V, ID=11.5A
RDSON(TYP)
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
Symbol
Outline
DFN5×6
MTE013N12RH8
Pin 1
D
D
D
D
D
D
D
D
S
G
S
S
S
S
S
G
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
Shipping
DFN 5 ×6
MTE013N12RH8-0-T6-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 2/10
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
10s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
120
V
±20
40
28.2
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=100C, VGS=10V (Note 1)
(Note 1)
ID
13.4
10.7
9.7
8.9
7.1
6.4
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Continuous Drain Current @ TA=85C, VGS=10V
Pulsed Drain Current
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
IDSM
A
IDM
IAS
160 *1
28
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=0.5mH, ID=28A, VDD=50V (Note 2, 4)
EAS
EAR
196
5 *2
50
mJ
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
(Note 3)
(Note 1)
(Note 1)
PD
TC=100℃
TA=25C
TA=70C
TA=85C
20
Total Power Dissipation
W
5.7
4.0
3.6
2.5
1.8
1.6
(Note 2)
(Note 2)
(Note 2)
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Symbol Typical Maximum Unit
t≤10s
Steady State
18
42
2.2
22
50
2.5
Thermal Resistance, Junction-to-ambient
RθJA
(Note 2)
C/W
Thermal Resistance, Junction-to-case
RθJC
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4.100% tested by conditions of L=0.5mH, IAS=20A, VGS=10V, VDD=50V
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 3/10
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
120
-
-
11
-
-
-
-
4
-
100
1
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=5A
V
2
-
-
-
-
-
S
nA
*1
±
±
IGSS
VGS= 20V, VDS=0V
VDS =96V, VGS =0V
VDS =96V, VGS =0V, Tj=55C
VGS =10V, ID=11.5A
IDSS
μA
5
14
Ω
m
RDS(ON) *1
Dynamic
10
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
2559
218
15
36
14.5
7.3
24.4
10.2
40.6
10.2
0.7
-
-
-
-
-
-
-
-
-
-
-
pF
VGS=0V, VDS=60V, f=1MHz
VDS=96V, VGS=10V, ID=22A
Qg
Qgs
Qgd
*1, 2
*1, 2
*1, 2
nC
td(ON) *1, 2
VDD=60V, ID=16A, VGS=10V,
tr
*1, 2
ns
td(OFF) *1, 2
RG=4.7Ω
tf
*1, 2
f=1MHz
Ω
Rg
Source-Drain Diode
IS
-
-
-
-
-
-
-
40
*1
A
ISM *3
VSD *1
trr
160
1.2
-
0.82
45.2
82.7
V
ns
nC
IS=15A, VGS=0V
IF=32A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 4/10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
80
70
60
50
40
30
20
10
0
10V, 9V, 8V
6V
5V
0.8
0.6
0.4
4.5V
ID=250μA,
VGS=0V
VGS=4V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
10
1
1.2
1
VGS=0V
Tj=25°C
VGS=7V
0.8
0.6
0.4
0.2
VGS=10V
Tj=150°C
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
2.4
2
ID=11.5A
VGS=10V, ID=11.5A
40
30
20
10
0
1.6
1.2
0.8
0.4
0
RDS(ON)@Tj=25°C : 10mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE013N12RH8
CYStek Product Specificatio
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 5/10
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=1mA
1000
100
10
Coss
0.8
0.6
0.4
0.2
ID=250μA
Crss
50
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
40
60
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=24V, 60V, 96V
from left to right
8
6
4
2
0
1
VDS=5V
0.1
0.01
Ta=25°C
Pulsed
ID=22A
30
0
5
10
15
20
25
35
40
0.001
0.01
0.1
1
10
100
Qg, Total Gate Charge(nC)
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
50
45
40
35
30
25
20
15
10
5
1000
100
10
RDSON
Limited
100μs
1ms
10ms
100ms
1s
TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1
VGS=10V, Tj(max)=150°C,
RθJC=2.5°C/W
DC
0
0.1
25
50
75
100
125
150
175
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 6/10
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
20
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
VDS=10V
18
16
14
12
10
8
TJ(MAX)=150°C
TC=25°C
RθJC=2.5°C/W
125°C
-40°C
25°C
6
4
2
0
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
0.1
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Power Derating Curve
Power Derating Curve
3
2.5
2
60
50
40
30
20
10
0
1.5
1
0.5
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, Case Temperature(℃)
TA, Ambient Temperature(℃)
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 7/10
Recommended Soldering Footprint & Stencil Design
unit : mm
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 8/10
Reel Dimension
Carrier Tape Dimension
Pin #1
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE013N12RH8
CYStek Product Specification
Spec. No. : C734H8
Issued Date : 2019.03.12
Revised Date :
CYStech Electronics Corp.
Page No. : 10/10
DFN5×6 Dimension
Marking :
Device
Name
E013
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
Inches
Millimeters
Inches
Min.
0.047
0.014
DIM
Min.
Max.
Min.
Max.
Min.
1.190
0.350
Max.
1.390
0.450
Max.
0.055
0.018
DIM
A
0.900
1.000
0.035
0.039
k
b
A3
D
E
D1
E1
D2
E2
0.254 REF
0.010 REF
4.944
5.974
3.910
3.375
4.824
5.674
5.096
6.126
4.110
3.575
4.976
5.826
0.195
0.235
0.154
0.133
0.190
0.223
0.201
0.241
0.162
0.141
0.196
0.229
e
L
L1
H
θ
1.270 TYP.
0.050 TYP.
0.559
0.424
0.574
10°
0.711
0.576
0.726
12°
0.022
0.017
0.023
10°
0.028
0.023
0.029
12°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE013N12RH8
CYStek Product Specification
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