MTE014N15RH8-0-T6-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE014N15RH8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总11页 (文件大小：906K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 11
N-Channel Enhancement Mode Power MOSFET
MTE014N15RH8
BVDSS
ID@VGS=10V, TC=25°C
150V
45A
7.8A
Features
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
14.5mΩ(typ)
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Symbol
Outline
DFN5×6
MTE014N15RH8
Pin 1
D
D
D
D
D
D
D
G
D
S
S
S
S
S
S
G
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
Shipping
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
MTE014N15RH8-0-T6-G
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 11
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
10s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
150
V
±20
45
28.5
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=100C, VGS=10V
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Continuous Drain Current @ TA=85C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=5mH, ID=20A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
ID
11.8
9.4
8.5
7.8
6.2
5.6
IDSM
A
IDM
IAS
EAS
EAR
132 *1
85
1000
8 *2
83
mJ
PD
TC=100℃
33
Total Power Dissipation
W
5.7
4.0
3.6
2.5
1.8
1.6
TA=25C
TA=70C
TA=85C
(Note 2)
(Note 2)
(Note 2)
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Symbol Typical Maximum Unit
t≤10s
Steady State
18
42
1.2
22
50
1.5
Thermal Resistance, Junction-to-ambient
RθJA
(Note 2)
C/W
Thermal Resistance, Junction-to-case
RθJC
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4.100% tested by conditions of L=0.1mH, IAS=40A, VGS=10V, VDD=25V
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 11
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
150
-
0.1
-
-
-
4
-
V
V/C
V
VGS=0V, ID=250μA
-
2
-
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
*GFS
28.2
S
nA
±
±
IGSS
-
-
-
-
-
-
-
100
1
VGS= 20V, VDS=0V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125C
VGS =10V, ID=20A
IDSS
μA
25
19.5
Ω
m
*RDS(ON)
Dynamic
*Qg
14.5
-
-
-
-
-
-
-
62.8
17.2
15.9
33
82
26
24
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
nC
VDS=75V, ID=20A, VGS=10V
-
-
-
-
27
Ω
ns
VDS=75V, ID=20A, VGS=10V, RGS=1
65.4
13.4
3798
240
12
1899
5697
-
-
-
-
-
-
pF
VGS=0V, VDS=75V, f=1MHz
f=1MHz
Ω
1.5
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
45
132
1.2
-
A
0.78
72
206
V
ns
nC
IS=10A, VGS=0V
VGS=0V, IF=10A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 11
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
120
100
80
60
40
20
0
10V, 9V, 8V,7V,6V
5V
0.8
0.6
0.4
ID=250μA,
4.5V
VGS=0V
VGS=4V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
1
VGS=0V
Tj=25°C
0.8
0.6
0.4
0.2
VGS=7V
10V
Tj=150°C
10
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
2.8
2.4
2
VGS=10V, ID=20A
ID=20A
RDS(ON)@Tj=25°C : 14.5mΩ typ.
40
30
20
10
0
1.6
1.2
0.8
0.4
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 11
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=1mA
1000
100
10
Coss
Crss
70
0.8
0.6
0.4
0.2
ID=250μA
1
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
80
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=30V, 75V, 120V
from left to right
8
6
4
2
0
VDS=15V
1
0.1
0.01
Ta=25°C
Pulsed
ID=20A
0
8
16 24 32 40 48 56 64 72
Qg, Total Gate Charge(nC)
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
60
50
40
30
20
10
0
1000
RDSON
100
10
1
Limited
100μs
1ms
10ms
TC=25°C, Tj=150°C
VGS=10V, RθJC=1.5°C/W
Single Pulse
VGS=10V, Tj(max)=150°C,
RθJC=1.5°C/W
100ms
DC
0.1
25
50
75
100
125
150 175
200
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 11
Typical Characteristics (Cont.)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
9
8
7
6
5
4
3
2
1
0
1000
100
10
RDSON
Limited
100μs
1
1ms
10ms
TA=25°C, Tj=150°C
VGS=10V, RθJA=50°C/W
Single Pulse
VGS=10V, Tj(max)=150°C,
RθJA=50°C/W
0.1
0.01
100ms
1s
DC
25
50
75
100
125
150
175
200
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
Tj Junction Temperature(°C)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
2000
120
1800
1600
1400
1200
1000
800
VDS=10V
TJ(MAX)=150°C
TC=25°C
100
80
60
40
20
0
RθJC=1.5°C/W
600
400
200
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Case
500
450
400
350
300
250
200
150
100
50
TJ(MAX)=150°C
TA=25°C
RθJA=50°C/W
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 11
Typical Characteristics (Cont.)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.1
0.05
0.02
4.RθJC=1.5°C/W
0.1
0.01
Single Pulse
1.E-03
0.01
1.E-04
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
0.1
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
0.05
4.RθJA=50°C/W
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 11
Recommended Soldering Footprint & Stencil Design
unit : mm
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 11
Reel Dimension
Carrier Tape Dimension
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 10/ 11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE014N15RH8
CYStek Product Specification
Spec. No. : C024H8
Issued Date : 2018.07.06
Revised Date :
CYStech Electronics Corp.
Page No. : 11/ 11
DFN5×6 Dimension
Marking:
E014
N15R
Device Name
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
0.90
0.00
0.33
0.20
4.80
3.61
5.90
5.70
Max.
Max.
0.043
0.002
0.020
0.012
0.197
0.156
Min.
3.38
Max.
3.78
Min.
Max.
A
A1
b
1.10
0.05
0.51
0.30
5.00
3.96
6.10
5.80
0.035
0.000
0.013
0.008
0.189
0.142
E2
e
H
K
L
L1
θ
0.133
0.149
1.27 BSC
0.050 BSC
0.41
1.10
0.51
0.06
8°
0.61
-
0.71
0.20
12°
0.016
0.043
0.020
0.002
8°
0.024
-
0.028
0.008
12°
C
D1
D2
E
0.232
0.224
0.240
0.228
E1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE014N15RH8
CYStek Product Specification
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