MTE015N10QH8 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE015N10QH8 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：540K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
BVDSS
100 V
39 A
8.8A
MTE015N10QH8
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=20A
12.6 mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
Outline
DFN5×6
MTE015N10QH8
Pin 1
D
D
D
D
D
D
D
G
D
S
S
S
S
S
S
G
G：Gate
D：Drain
S：Source
Pin 1
Ordering Information
Device
Package
Shipping
3000 pcs / Tape & Reel
DFN5×6
MTE015N10QH8-0-T6-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
100
±20
39
24.7
8.8 *3
7.0 *3
160 *1
39
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
ID
IDSM
A
IDM
IAS
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=5mH, ID=13A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
EAS
EAR
422 *4
mJ
5
*2
50
20
2.5
1.6
PD
TC=100℃
Total Power Dissipation
W
TA=25℃
PDSM
TA=70℃
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
Symbol
Rth,j-c
Rth,j-a
Value
2.5
50 *3
Unit
°C/W
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
4. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
ΔBVDSS/ΔTj
100
-
-
-
4
-
V
VGS=0V, ID=250μA
-
2
-
0.07
-
17.3
V/°C Reference to 25°C, ID=250μA
V
S
VGS(th)
GFS
VDS = VGS, ID=250μA
VDS =10V, ID=20A
*1
nA
±
±
IGSS
-
-
-
-
-
-
-
100
1
VGS= 20V
VDS =80V, VGS =0V
DS =80V, VGS =0V, Tj=85°C
VGS =10V, ID=20A
IDSS
μA
10
16.5
V
Ω
m
RDS(ON) *1
12.6
Dynamic
Ciss
Coss
Crss
-
-
-
1067
238
213
-
-
-
pF
VGS=0V, VDS=25V, f=1MHz
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 3/10
Qg
Qgs
Qgd
td(ON) *1, 2
tr
-
-
-
-
-
-
-
-
41.2
5.2
22.8
16
33.8
35.6
20.2
0.9
-
-
-
-
-
-
-
-
*1, 2
*1, 2
*1, 2
nC
VDS=80V, VGS=10V, ID=20A
VDS=50V, ID=20A, VGS=10V,
*1, 2
ns
Ω
A
td(OFF) *1, 2
RGS=3Ω
tf
Rg
*1, 2
VGS=15mV, VDS=0V, f=1MHz
Source-Drain Diode
IS
-
-
-
-
-
-
-
39
160
1
-
-
*1
ISM *3
VSD *1
trr
0.71
36
43
V
ns
nC
IS=1A, VGS=0V
IF=20A, dIF/dt=100A/μs
Qrr
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 4/10
Recommended Soldering Footprint & Stencil Design
unit : mm
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 5/10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
160
120
80
10V
9V
8
V
7
V
0.8
0.6
0.4
6
V
40
I =250 A,
D
μ
GS=0V
VGS=4.5V
5V
V
0
0
1
2
3
4
5
6
7
8
9
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=6V
VGS=10V
Tj=150°C
10
0.01
0.1
1
ID, Drain Current(A)
10
100
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
80
2.8
2.4
2
70
60
50
40
30
20
10
0
VGS=10V, ID=20A
ID=20A
1.6
1.2
0.8
0.4
0
RDS(ON)@Tj=25°C :12.6mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE015N10QH8
CYStek Product Specificati
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 6/10
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
ID=1mA
Ciss
1000
0.8
0.6
0.4
C
oss
I =250 A
μ
D
Crss
100
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
40
50
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=20V
8
6
4
2
0
VDS=50V
VDS=15V
1
VDS=80V
0.1
0.01
Pulsed
Ta=25°C
ID=20A
0
6
12 18 24 30 36 42 48 54 60
Total Gate Charge---Qg(nC)
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
45
40
35
30
25
20
15
10
5
1000
100
10
RDS(ON)
Limited
100 s
μ
1ms
10ms
100ms
1s
1
TC=25°C, Tj=150°C,
JC
VGS=10V, R =2.5°C/W
θ
JC
VGS=10V, Rθ =2.5°C/W
DC
Single Pulse
0
0.1
25
50
75
100
125
150
175
0.01
0.1
V
1
10
100
1000
DS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 7/10
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
160
140
120
100
80
3000
2500
2000
1500
1000
500
VDS=10V
TJ(MAX)=150°C
TC=25°C
R
JC=2.5°C/W
θ
60
40
20
0
0
0
2
4
GS, Gate-Source Voltage(V)
6
8
10
1E-04 0.001 0.01
0.1
1
10
100 1000
V
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
JC
JC
1.Rθ (t)=r(t)*Rθ
0.1
0.1
1
2
2.Duty Factor, D=t /t
JM
C
DM
JC
3.T -T =P *Rθ (t)
0.05
0.02
0.01
JC
4.Rθ =2.5 °C/W
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 8/10
Reel Dimension
Carrier Tape Dimension
Pin #1
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE015N10QH8
CYStek Product Specification
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
CYStech Electronics Corp.
Page No. : 10/10
DFN5×6 Dimension
Marking :
E015
N10Q
Device
Name
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
Inches
Millimeters
Inches
Min.
0.047
0.014
DIM
Min.
Max.
Min.
Max.
Min.
Max.
1.390
0.450
Max.
0.055
0.018
DIM
A
0.900
1.000
0.035
0.039
k
b
1.190
0.350
A3
D
E
D1
E1
D2
E2
0.254 REF
0.010 REF
4.944
5.974
3.910
3.375
4.824
5.674
5.096
6.126
4.110
3.575
4.976
5.826
0.195
0.235
0.154
0.133
0.190
0.223
0.201
0.241
0.162
0.141
0.196
0.229
e
L
L1
H
θ
1.270 TYP.
0.050 TYP.
0.559
0.424
0.574
10°
0.711
0.576
0.726
12°
0.022
0.017
0.023
10°
0.028
0.023
0.029
12°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE015N10QH8
CYStek Product Specification
相关型号：
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