MTE050N10KRJ3 [CYSTEKEC]
N -Channel Enhancement Mode Power MOSFET;
| 型号： | MTE050N10KRJ3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N -Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE050N15ARJ3
BVDSS
150V
20A
48 mΩ(typ)
ID@TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=15A
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
MTE050N15ARJ3
TO-252(DPAK)
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
Package
TO-252
Shipping
MTE050N15ARJ3-0-T3-G
2500 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
VGS
150
±20
20
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 1)
(Note 1)
(Note 2)
(Note 2)
ID
14
4.3
3.4
60
IDSM
A
IDM
IAR
Avalanche Current @L=0.1mH
(Note 3)
40
Single Pulse Avalanche Energy @ L=0.5mH, ID=20 Amps,
VDD=50V
Repetitive Avalanche Energy
EAS
EAR
PD
100
(Note 5)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
6
60
30
2.5
1.6
TC=25°C
TC=100°C
TA=25°C
Power Dissipation
W
PDSM
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Tj, Tstg -55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
Value
2.5
50
Unit
°C/W
RθJA
110
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. 100% tested by conditions of VDD=50V, L=0.1mH, VGS=10V, IAS=10A
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
150
-
-
-
4.0
-
V
V/°C
V
VGS=0V, ID=250μA
-
2.0
-
0.13
-
14.4
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=10A
S
nA
±
±
IGSS
IDSS
IDSS
-
-
-
-
-
-
-
100
1
VGS= 20V, VDS=0V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
VGS =10V, ID=15A
μA
25
65
Ω
m
*RDS(ON)
Dynamic
*Qg
48
-
-
-
-
-
-
-
-
-
-
22.7
5.7
5.5
14.2
16.6
28.6
8.8
1269
76
-
-
-
-
-
-
-
-
-
-
nC
VDD=75V, ID=15A,VGS=10V
VDD=75V, ID=10A, VGS=10V, RG=3
VGS=0V, VDS=80V, f=1MHz
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Ω
ns
pF
A
10
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
20
60
1.2
0.85
54
124
V
ns
nC
IS=10A, VGS=0V
-
-
VGS=0V, IF=10A, dIF/dt=100A/μs
*Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
60
10V
9V
50
8V
5.5V
5V
7V
40
6V
30
20
10
0
0.8
0.6
0.4
VGS=4.5
V
I =250 A,
μ
GS=0V
D
V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
1.0
0.8
0.6
0.4
0.2
1000
Tj=25°C
VGS=6V
VGS=4.5V
100
Tj=150°C
VGS=10V
10
0.1
1 10
ID, Drain Current(A)
100
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
150
120
90
60
30
0
2.8
VGS=10V, ID=15A
RDS(ON)@Tj=25°C : 48mΩ typ.
2.4
2.0
1.6
1.2
0.8
0.4
ID=15A
VGS=6V, ID=10A
RDS(ON)@Tj=25°C : 53mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
VGS, Gate-Source Voltage(V)
8
10
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1.0
0.8
0.6
0.4
Ciss
1000
ID=1mA
C
oss
100
10
1
Crss
μ
ID=250 A
f=1MHz
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
10
20
V
30
40
50
60
DS, Drain-Source Voltage(V)
70
80
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
8
100
10
ID=15A
VDS=75V
VDS=30V
VDS=5V
6
1
VDS=10V
4
VDS=120V
0.1
0.01
2
Pulsed
Ta=25°C
0
0
4
8
12
16
20
24
0.001
0.01
0.1
ID, Drain Current(A)
1
10
100
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
25
20
15
10
5
100
10
1
10μs
RDS(ON)
Limited
100μs
1ms
10ms
100ms
DC
TC=25°C, Tj(max)=175°C
θ
θ
Tj(max)=150°C,R JC=2.5°C/W,
VGS=10V,R JC=2.5°C/W
VGS=10V, Single Pulse
Single Pulse
0
0.1
25
50
75
100 125
150 175
200
0.1
1
10
DS, Drain-Source Voltage(V)
100
1000
V
TC, Case Temperature(°C)
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Case
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
VDS=10V
TJ(MAX)=175°C
TC=25°C
R
θ
JC=2.5°C/W
0
0
1
2
3
4
5
6
7
GS, Gate-Source Voltage(V)
8
9
10
1E-05 0.0001 0.001 0.01
Pulse Width(s)
0.1
1
10
V
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
θ
θ
JC
1.R JC(t)=r(t)*R
2.Duty Factor, D=t1/t2
0.05
0.02
θ
3.TJM-TC=PDM*R JC(t)
θ
4.R JC=2.5°C/W
0.01
0.01
0.001
Single Pulse
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE050N15ARJ3
CYStek Product Specification
Spec. No. : C035J3
Issued Date : 2017.08.17
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 9
TO-252 Dimension
Marking:
4
Device
Name
E050N
15AR
Date
□□□□
Code
2
3
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
Inches
Min.
Millimeters
Inches
Millimeters
DIM
DIM
Max.
0.094
0.005
0.048
0.034
0.034
0.023
0.023
0.264
0.215
0.244
Min.
Max.
2.400
0.127
1.210
0.860
0.860
0.580
0.580
6.700
5.460
6.200
Min.
0.086
0.172
Max.
0.094
0.188
Min.
2.186
4.372
Max.
2.386
4.772
A
A1
B
b
b1
C
C1
D
D1
E
0.087
0.000
0.039
0.026
0.026
0.018
0.018
0.256
0.201
0.236
2.200
0.000
0.990
0.660
0.660
0.460
0.460
6.500
5.100
6.000
e
e1
H
K
L
L1
L2
L3
P
0.163 REF
0.190 REF
0.386 0.409
0.114 REF
4.140 REF
4.830 REF
9.800 10.400
2.900 REF
0.055
0.024
0.067
0.039
1.400
0.600
1.700
1.000
0.026 REF
0.211 REF
0.650 REF
5.350 REF
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE050N15ARJ3
CYStek Product Specification
相关型号：
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