MTN6680Q8 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET![MTN6680Q8](http://pdffile.icpdf.com/pdf1/p00139/img/icpdf/MTN66_770838_icpdf.jpg)
型号: | MTN6680Q8 |
厂家: | ![]() |
描述: | N-Channel Enhancement Mode Power MOSFET |
文件: | 总6页 (文件大小:450K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
Spec. No. : C383Q8
Issued Date : 2007.06.14
Revised Date :
CYStech Electronics Corp.
Page No. : 1/6
N-Channel Enhancement Mode Power MOSFET
MTN6680Q8
Description
The MTN6680Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free package
Symbol
Outline
MTN6680Q8
SOP-8
G:Gate
D:Drain
S:Source
MTN6680Q8
CYStek Product Specification
Spec. No. : C383Q8
Issued Date : 2007.06.14
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction-to-ambient, max
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
PD
30
±20
11.5 *1
9.5 *1
50 *2
2.5
0.02
50 *1
V
V
A
A
A
W
W/°C
°C/W
Rth,j-a
Tj, Tstg
-55~+150
°C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS
30
-
-
-
3.0
-
100
1
25
11
18
V
V/°C
V
S
nA
VGS=0, ID=250μA
-
1.0
-
-
-
0.02
Reference to 25°C, ID=1mA
VDS = VGS, ID=250μA
VDS =15V, ID=11.5A
-
30
-
-
-
±
±
IGSS
IDSS
IDSS
VGS= 20
μA
μA
VDS =30V, VGS =0
-
-
VDS =24V, VGS =0, Tj=70°C
VGS =10V, ID=11.5A
VGS =4.5V, ID=9.5A
Ω
*RDS(ON)
-
m
m
Ω
*RDS(ON)
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
-
-
16.8
4.2
8
8.9
7.3
25.6
18.6
1450
285
180
-
-
-
-
-
-
-
-
-
-
nC
ID=11.5A, VDS=15V, VGS=5V
VDS=15V, ID=1A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
ns
Ω
Ω
RG=5.5 , RD=10
pF
VGS=0V, VDS=25V, f=1MHz
Source-Drain Diode
*VSD
*IS
-
-
-
-
1.3
1.92
V
A
IS=3.5A, VGS=0V
VD=VG=0, VS=1.3V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN6680Q8
CYStek Product Specification
Spec. No. : C383Q8
Issued Date : 2007.06.14
Revised Date :
CYStech Electronics Corp.
Page No. : 3/6
Characteristic Curves
MTN6680Q8
CYStek Product Specification
Spec. No. : C383Q8
Issued Date : 2007.06.14
Revised Date :
CYStech Electronics Corp.
Page No. : 4/6
Characteristic Curves(Cont.)
MTN6680Q8
CYStek Product Specification
Spec. No. : C383Q8
Issued Date : 2007.06.14
Revised Date :
CYStech Electronics Corp.
Page No. : 5/6
Characteristic Curves(Cont.)
MTN6680Q8
CYStek Product Specification
Spec. No. : C383Q8
Issued Date : 2007.06.14
Revised Date :
CYStech Electronics Corp.
Page No. : 6/6
SOP-8 Dimension
Right side View
Top View
A
Marking:
G
I
Device Name
6680SC
Date Code
□□□□
C
B
H
J
D
Front View
Part A
E
K
Part A
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
M
O
F
*: Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
0.2007
Min.
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
Min.
Max.
Min.
Max.
0.20
0.70
0.25
0.52
0.50
0.13
0.15
A
B
C
D
E
F
0.1909
0.1515
0.2283
0.0480
0.0145
0.1472
0.0570
0.1889
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
I
J
0.0019
0.0118
0.0074
0.0145
0.0118
0.0031
0.0000
0.0078
0.0275
0.0098
0.0204
0.0197
0.0051
0.0059
0.05
0.30
0.19
0.37
0.30
0.08
0.00
0.1555
0.2441
0.0519
0.0185
0.1527
0.0649
0.2007
K
L
M
N
O
G
H
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN6680Q8
CYStek Product Specification
相关型号:
©2020 ICPDF网 联系我们和版权申明