MTN6680Q8 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
MTN6680Q8
型号: MTN6680Q8
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

N-Channel Enhancement Mode Power MOSFET
N沟道增强型功率MOSFET

文件: 总6页 (文件大小:450K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C383Q8  
Issued Date : 2007.06.14  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/6  
N-Channel Enhancement Mode Power MOSFET  
MTN6680Q8  
Description  
The MTN6680Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best  
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.  
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications  
and suited for low voltage applications such as DC/DC converters.  
Features  
Single Drive Requirement  
Low On-resistance  
Fast Switching Characteristic  
Dynamic dv/dt rating  
Repetitive Avalanche Rated  
Pb-free package  
Symbol  
Outline  
MTN6680Q8  
SOP-8  
GGate  
DDrain  
SSource  
MTN6680Q8  
CYStek Product Specification  
Spec. No. : C383Q8  
Issued Date : 2007.06.14  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/6  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current @VGS=10V, TA=25°C  
Continuous Drain Current @VGS=10V, TA=70°C  
Pulsed Drain Current  
Total Power Dissipation  
Linear Derating Factor  
Thermal Resistance, Junction-to-ambient, max  
Operating Junction and Storage Temperature  
VDS  
VGS  
ID  
ID  
IDM  
PD  
30  
±20  
11.5 *1  
9.5 *1  
50 *2  
2.5  
0.02  
50 *1  
V
V
A
A
A
W
W/°C  
°C/W  
Rth,j-a  
Tj, Tstg  
-55~+150  
°C  
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad.  
2. Pulse width limited by maximum junction temperature  
Characteristics (Tj=25°C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Static  
BVDSS  
BVDSS/Tj  
VGS(th)  
GFS  
30  
-
-
-
3.0  
-
100  
1
25  
11  
18  
V
V/°C  
V
S
nA  
VGS=0, ID=250μA  
-
1.0  
-
-
-
0.02  
Reference to 25°C, ID=1mA  
VDS = VGS, ID=250μA  
VDS =15V, ID=11.5A  
-
30  
-
-
-
±
±
IGSS  
IDSS  
IDSS  
VGS= 20  
μA  
μA  
VDS =30V, VGS =0  
-
-
VDS =24V, VGS =0, Tj=70°C  
VGS =10V, ID=11.5A  
VGS =4.5V, ID=9.5A  
Ω
*RDS(ON)  
-
m
m
Ω
*RDS(ON)  
Dynamic  
*Qg  
-
-
-
-
-
-
-
-
-
-
-
-
16.8  
4.2  
8
8.9  
7.3  
25.6  
18.6  
1450  
285  
180  
-
-
-
-
-
-
-
-
-
-
nC  
ID=11.5A, VDS=15V, VGS=5V  
VDS=15V, ID=1A, VGS=10V,  
*Qgs  
*Qgd  
*td(ON)  
*tr  
*td(OFF)  
*tf  
Ciss  
Coss  
Crss  
ns  
Ω
Ω
RG=5.5 , RD=10  
pF  
VGS=0V, VDS=25V, f=1MHz  
Source-Drain Diode  
*VSD  
*IS  
-
-
-
-
1.3  
1.92  
V
A
IS=3.5A, VGS=0V  
VD=VG=0, VS=1.3V  
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
MTN6680Q8  
CYStek Product Specification  
Spec. No. : C383Q8  
Issued Date : 2007.06.14  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/6  
Characteristic Curves  
MTN6680Q8  
CYStek Product Specification  
Spec. No. : C383Q8  
Issued Date : 2007.06.14  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/6  
Characteristic Curves(Cont.)  
MTN6680Q8  
CYStek Product Specification  
Spec. No. : C383Q8  
Issued Date : 2007.06.14  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/6  
Characteristic Curves(Cont.)  
MTN6680Q8  
CYStek Product Specification  
Spec. No. : C383Q8  
Issued Date : 2007.06.14  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/6  
SOP-8 Dimension  
Right side View  
Top View  
A
Marking:  
G
I
Device Name  
6680SC  
Date Code  
□□□□  
C
B
H
J
D
Front View  
Part A  
E
K
Part A  
L
8-Lead SOP-8 Plastic Package  
CYStek Package Code: Q8  
N
M
O
F
*: Typical  
Inches  
DIM  
Millimeters  
Inches  
Millimeters  
DIM  
Min.  
Max.  
0.2007  
Min.  
Max.  
5.10  
3.95  
6.20  
1.32  
0.47  
3.88  
1.65  
5.10  
Min.  
Max.  
Min.  
Max.  
0.20  
0.70  
0.25  
0.52  
0.50  
0.13  
0.15  
A
B
C
D
E
F
0.1909  
0.1515  
0.2283  
0.0480  
0.0145  
0.1472  
0.0570  
0.1889  
4.85  
3.85  
5.80  
1.22  
0.37  
3.74  
1.45  
4.80  
I
J
0.0019  
0.0118  
0.0074  
0.0145  
0.0118  
0.0031  
0.0000  
0.0078  
0.0275  
0.0098  
0.0204  
0.0197  
0.0051  
0.0059  
0.05  
0.30  
0.19  
0.37  
0.30  
0.08  
0.00  
0.1555  
0.2441  
0.0519  
0.0185  
0.1527  
0.0649  
0.2007  
K
L
M
N
O
G
H
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTN6680Q8  
CYStek Product Specification  

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