2DB1119S-13 [DIODES]
PNP SURFACE MOUNT TRANSISTOR; PNP表面贴装晶体管
| 型号： | 2DB1119S-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DB1119S
PNP SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Mechanical Data
TOR
LLEC
2,4
CO
•
•
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
3 E
2 C
1 B
C 4
T
•
•
1
ASE
B
3
•
•
•
EMITTER
EW
VI
OP
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Value
-25
-25
-5
Unit
V
V
V
A
Peak Pulse Current
-2
Continuous Collector Current
-1
A
IC
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
Min
Typ
Max
Unit
Conditions
-25
-25
-5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -10μA, IE = 0
C = -1mA, IB = 0
E = -10μA, IC = 0
CB = -20V, IE = 0
EB = -4V, IC = 0
V
-0.1
⎯
⎯
μA
μA
V
V
Emitter Cut-Off Current
-0.1
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-0.15
-0.85
⎯
-0.7
-1.2
280
⎯
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
140
I
I
C = -500mA, IB = -50mA
C = -500mA, IB = -50mA
⎯
⎯
V
V
CE = -2V, IC = -50mA
CE = -2V, IC = -1A
DC Current Gain
hFE
40
⎯
SMALL SIGNAL CHARACTERISTICS
VCE = -10V, IC = -50mA
f = 100MHz
Transition Frequency
200
12
MHz
pF
fT
⎯
⎯
⎯
⎯
VCB = -10V, IE = 0,
f = 1MHz
Output Capacitance
Cob
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31298 Rev. 2 - 2
1 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
1.0
0.8
0.6
0.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.2
0
0
1
2
3
4
5
25
50
75
100
125
C)
150
0
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (
°
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 3)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
350
300
0.8
0.6
250
200
150
0.4
100
50
0
0.2
0
-IC, COLLECTOR CURRENT (A)
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation
Voltage vs. Collector Current
Fig. 3 Typical DC Current Gain
vs. Collector Current
1
-IC, COLLECTOR CURRENT (A)
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 6 Typical Base-Emitter Saturation
Voltage vs. Collector Current
DS31298 Rev. 2 - 2
2 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
150
135
250
200
120
105
90
150
100
75
60
45
V
= -10V
CE
30
50
0
f = 100MHz
15
0
0
10 20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
VR
, REVERSE VOLTAGE (V)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
Fig. 7 Typical Capacitance Characteristics
Ordering Information (Note 5)
Device
Packaging
Shipping
2DB1119S-13
SOT89-3L
2500/Tape & Reel
Notes:
5. For packaging details, please see below or go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
P12BS = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
YWW
P12BS
Package Outline Dimensions
D1
C
SOT89-3L
Dim Min Max Typ
A
B
1.40 1.60 1.50
0.45 0.55 0.50
0.37 0.47 0.42
0.35 0.43 0.38
4.40 4.60 4.50
1.50 1.70 1.60
2.40 2.60 2.50
E
H
B1
C
L
D
B
D1
E
e
B1
e
—
—
1.50
A
H
3.95 4.25 4.10
0.90 1.20 1.05
L
All Dimensions in mm
D
DS31298 Rev. 2 - 2
3 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
Suggested Pad Layout
1.7
2.7
0.4
1.9
1.3
0.9
3.0
Unit: mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31298 Rev. 2 - 2
4 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
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