DMG1023UV-7 [DIODES]
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET; 双P沟道增强型MOSFET型号: | DMG1023UV-7 |
厂家: | DIODES INCORPORATED |
描述: | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总6页 (文件大小:132K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMG1023UV
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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•
•
•
•
•
•
•
•
•
•
Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 3KV
•
•
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Copper leadframe.
•
•
•
Solderable per MIL-STD-202, Method 208
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•
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Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
G1
S1
D2
G2
S2
D1
BOTTOM VIEW
ESD PROTECTED
TOP VIEW
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-Source Voltage
±6
V
VGSS
T
T
A = 25°C
A = 85°C
Steady
-1.03
-0.68
A
A
Continuous Drain Current (Note 3) VGS = -4.5V
State
ID
Pulsed Drain Current (Note 4)
-3
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Symbol
PD
Value
530
Unit
mW
°C/W
°C
235
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
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June 2010
© Diodes Incorporated
DMG1023UV
Document number: DS31975 Rev. 5 - 2
DMG1023UV
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
-
-
-100
±2.0
nA
μA
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
-0.5
-
0.5
0.7
1.0
-
-1.0
0.75
1.05
1.5
20
V
VGS(th)
VDS = VGS, ID = -250μA
V
V
V
V
V
GS = -4.5V, ID = -430mA
GS = -2.5V, ID = -300mA
GS = -1.8V, ID = -150mA
GS = -1.7V, ID = -100mA
GS = -1.5V, ID = -100mA
Static Drain-Source On-Resistance
-
-
Ω
RDS (ON)
-
25
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
0.9
-0.8
-
S
V
|Yfs|
VSD
VDS = -10V, ID = -250mA
VGS = 0V, IS = -150mA
-1.2
-
-
-
-
-
-
-
-
-
-
59.76
12.07
6.36
622.4
100.3
132.2
5.1
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
V
DS = -16V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
V
GS = -4.5V, VDS = -10V,
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
I
D = -250mA
Gate-Drain Charge
Turn-On Delay Time
VDD = -10V, VGS = -4.5V,
RL = 47Ω, RG = 10Ω,
ID = -200mA
8.1
Turn-On Rise Time
28.4
20.7
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
10
8
1.5
V
= -8.0V
GS
V
V
= -5V
DS
1.2
0.9
= -4.5V
GS
V
= -3.0V
GS
V
= -2.5V
6
4
2
GS
V
= -2.0V
GS
0.6
0.3
0
T
= 150°C
A
V
= -1.5V
GS
T
= 85°C
A
T
= 125°C
A
T
= 25°C
V
= -1.2V
A
GS
T
= -55°C
A
0
0
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
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© Diodes Incorporated
DMG1023UV
Document number: DS31975 Rev. 5 - 2
DMG1023UV
1.0
0.8
1.6
1.4
V
= -4.5V
GS
1.2
1.0
0.8
0.6
0.4
T
= 150°C
A
V
= -1.8V
GS
T
= 125°C
= 85°C
A
0.6
0.4
0.2
0
T
A
V
= -2.5V
T
= 25°C
A
GS
V
T
= -55°C
A
= -4.5V
GS
0.2
0
0
0.3
0.6
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.9
1.2
1.5
0
0.3
0.6
0.9
1.2
1.5
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.2
1.5
1.0
0.8
V
= -2.5V
GS
V
I
= -2.5V
GS
I
= -500mA
1.3
1.1
0.9
D
= -500mA
D
V
= -4.5V
= -1.0A
GS
0.6
0.4
I
D
V
= -4.5V
GS
I
= -1.0A
D
0.2
0
0.7
0.5
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.6
10
8
1.2
0.8
6
4
I
= -1mA
D
T
= 25°C
A
I
= -250µA
D
0.4
0
2
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMG1023UV
Document number: DS31975 Rev. 5 - 2
DMG1023UV
100
10
1
1,000
100
f = 1MHz
C
iss
T
= 150°C
= 125°C
A
T
A
C
oss
C
rss
10
T
= 85°C
= 25°C
A
T
A
1
0
5
10
15
20
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
JA
R
= 260°C/W
θ
JA
P(pk)
T
0.01
t
1
D = 0.01
t
2
- T = P * R (t)
J
A
θJA
D = 0.005
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
Ordering Information (Note 7)
Part Number
Case
Packaging
DMG1023UV-7
SOT-563
3000 / Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
PA1
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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June 2010
© Diodes Incorporated
DMG1023UV
Document number: DS31975 Rev. 5 - 2
DMG1023UV
Package Outline Dimensions
A
SOT-563
Dim Min Max
Typ
B
C
A
B
C
D
G
H
K
L
0.15 0.30 0.20
1.10 1.25 1.20
1.55 1.70 1.60
D
G
-
-
0.50
0.90 1.10 1.00
1.50 1.70 1.60
0.55 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
M
K
M
All Dimensions in mm
H
L
Suggested Pad Layout
C2
C2
Dimensions Value (in mm)
Z
G
2.2
1.2
X
Y
0.375
0.5
C1
G
Z
C1
C2
1.7
0.5
Y
X
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© Diodes Incorporated
DMG1023UV
Document number: DS31975 Rev. 5 - 2
DMG1023UV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
DMG1023UV
Document number: DS31975 Rev. 5 - 2
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