DMN3026LVTQ-7 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN3026LVTQ-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3026LVTQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input Capacitance
ID
BVDSS
RDS(ON) Max
TA = +25°C
Low On-Resistance
Fast Switching Speed
6.6A
5.8A
23mΩ @ VGS = 10V
30mΩ @ VGS = 4.5V
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: TSOT26
DC-DC Converters
Power management functions
Backlighting
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
TSOT26
D
D
G
D
1
2
3
6
5
4
D
S
Equivalent Circuit
Top View
Pin Configuration
Top View
Ordering Information (Note 5)
Part Number
DMN3026LVTQ-7
DMN3026LVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
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August 2015
© Diodes Incorporated
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
DMN3026LVTQ
Marking Information
N5L = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
N5L
M = Month (ex: 9 = September)
Date Code Key
Year
2010
…
2014
2015
2016
2017
2018
2019
2020
2021
2022
Code
X
…
B
C
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Units
30
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
6.6
5.3
A
A
ID
ID
Continuous Drain Current (Note 7) VGS = 10V
8.5
6.8
t<10s
Maximum Body Diode Forward Current (Note 7)
3.0
35
A
A
IS
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
Thermal Characteristics
Characteristic
Symbol
Value
Units
1.2
0.8
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 6)
W
PD
RθJA
PD
100
60
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
1.5
TA = +25°C
TA = +70°C
Steady state
t<10s
W
1.0
83
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
50
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
14.5
-55 to +150
RθJC
TJ, TSTG
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© Diodes Incorporated
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
DMN3026LVTQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
BVDSS
IDSS
1.0
VGS = 0V, ID = 250µA
µA
nA
VDS = 30V, VGS = 0V
IGSS
100
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
1.5
19
2.0
23
V
mΩ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6.5A
VGS = 4.5V, ID = 6.0A
VGS = 0V, IS = 1.0A
Static Drain-Source On-Resistance
22
30
Diode Forward Voltage
0.7
1.2
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
Coss
Crss
RG
Qg
643
65
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
49
2.5
5.7
12.5
1.7
1.8
2.2
2.5
12.1
3.0
6.5
1.7
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
nC
VDS = 15V, ID = 4.0A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDD = 15V, RG = 6.0Ω,
nS
Turn-Off Delay Time
ID= 6.5A
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
nS
nC
trr
IF = 6.5A, dI/dt = 100A/μs
IF = 6.5A, dI/dt = 100A/μs
Qrr
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
DMN3026LVTQ
30
25
20
15
10
5
20
18
16
14
12
10
8
V
= 10V
= 5V
GS
V
= 5.0V
DS
V
GS
V
= 4.5V
GS
V
= 3V
GS
V
= 4.V
GS
V
= 3.5V
GS
V
= 2.5V
T
= 150°C
GS
A
6
T
= 85°C
A
T
= 125°C
4
A
T
= 25°C
A
2
T
= -55°C
A
V
= 2V
GS
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.03
0.1
0.08
0.06
0.04
0.025
V
= 4.5V
GS
V
= 10V
0.02
0.015
0.01
GS
I
= 6.5A
D
0.02
0
I
= 6A
D
1
6
11
16
21
26
31
0
4
8
12
16
20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE CURRENT (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristics
0.05
0.045
0.04
1.8
V
= 4.5V
GS
V
I
= 10V
GS
= 6.5A
D
1.6
1.4
1.2
1
T
= 150°C
A
T
= 125°C
A
0.035
0.03
V
= 4.5V
= 6A
GS
I
T
= 85°C
D
A
0.025
0.02
T
A
= 25°C
T
= -55°C
A
0.015
0.01
0.8
0.005
0.6
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
ID, DRAIN CURRENT (A)
Figure 6 On-Resistance Variation with Temperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
DMN3026LVTQ
0.05
0.04
2
1.8
1.6
1.4
1.2
1
V
= 4.5V
= 6A
GS
I
= 1mA
I
D
D
I
= 250µA
D
0.03
0.02
0.01
0
V
I
= 10V
GS
= 6.5A
D
0.8
0.6
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
20
18
16
14
12
10
8
f = 1MHz
1000
T
= 150°C
C
A
iss
T
= 125°C
A
T
= 25°C
A
100
C
T
= 85°C
oss
6
A
4
C
rss
T
= -55°C
A
2
10
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
100
10
R
DS(on)
Limited
P
= 10µs
W
DC
P
= 10s
W
V
I
= 15V
1
DS
= 4A
P
= 1s
W
D
P
= 100ms
W
P
= 10ms
W
P
= 1ms
0.1
W
T
T
= 150°C
J(max)
= 25°C
A
P
= 100µs
W
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10 11 12 13
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
DMN3026LVTQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 97°C/W
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
DMN3026LVTQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
D
TSOT26
Dim Min Max Typ
e1
A
—
1.00
—
—
—
A1 0.01 0.10
A2 0.84 0.90
D
E
E1
b
c
e
—
—
—
—
—
—
2.90
2.80
1.60
—
E
E1
L2
c
0.30 0.45
0.12 0.20
—
—
—
L
—
—
0.95
1.90
—
4x1
e
e1
L
6x b
0.30 0.50
L2
θ
θ1
—
0°
4°
—
8°
12°
0.25
4°
—
A2
A1
A
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
TSOT26
Dimensions Value (in mm)
C
C
C
X
0.950
0.700
1.000
3.199
Y
Y1
Y1
Y (6x)
X (6x)
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DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
DMN3026LVTQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
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