DMN601TK [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN601TK |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN601TK
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
·
·
·
Low On-Resistance: RDS(ON)
TOP VIEW
SOT-523
Low Gate Threshold Voltage
Low Input Capacitance
A
Dim Min Max Typ
D
A
B
C
D
G
H
J
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
Fast Switching Speed
C
B
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
S
G
¾
¾
0.50
G
H
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
K
J
M
Mechanical Data
N
K
L
·
·
Case: SOT-523
L
D
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
M
N
a
Drain
·
·
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
0°
8°
¾
All Dimensions in mm
·
·
·
·
Terminal Connections: See Diagram
Marking: See Last Page
Gate
Ordering & Date Code Information: See Last Page
Weight: 0.002 grams (approximate)
ESD protected up to 2kV
Gate
Protection
Source
Diode
EQUIVALENT CIRCUIT
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
Value
60
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
VGSS
±20
300
800
Continuous
Pulsed (Note 3)
ID
mA
Pd
Total Power Dissipation (Note 1)
150
833
mW
RqJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
Tj, TSTG
-65 to +150
°C
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width £10mS, Duty Cycle £1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30654 Rev. 3 - 2
1 of 4
DMN601TK
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 10mA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
60
¾
¾
¾
¾
¾
V
mA
mA
1.0
±10
IGSS
¾
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS(th)
RDS (ON)
|Yfs|
1.0
¾
1.6
2.5
V
W
¾
¾
2.0
3.0
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
80
¾
¾
ms
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
5.0
Notes:
5. Short duration test pulse used to minimize self-heating effect.
1.4
1.00
0.10
0.01
VGS = 10V
8V
6V
5V
4V
3V
VDS = 10V
Pulsed
10V
8V
6V
1.2
1.0
0.8
0.6
0.4
0.2
0
5V
TA = 125°C
4V
TA = 75°C
TA = 25°C
TA = -25°C
3V
1.5
1
2
5
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2
10
VGS = 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
TA = 125°C
TA = 150°C
TA = 85°C
1.5
1
1
TA = -55°C
TA = -25°C
TA = 0°C
TA = 25°C
0.5
0
0.1
0.001
-25
75 100
0
25
50
125 150
-50
0.1
1
0.01
Tch, CHANNEL TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
DS30654 Rev. 3 - 2
2 of 4
www.diodes.com
DMN601TK
10
7
6
5
4
VGS = 5V
Pulsed
TA = 25°C
Pulsed
TA = 85°C
TA = 125°C
ID = 300mA
TA = 150°C
1
TA = -55°C
3
2
1
TA = 0°C
TA = 25°C
TA = -25°C
ID = 150mA
0.1
0
1
0.1
ID, DRAIN CURRENT (A)
0.001
0.01
4
8
16 18
2
6
10 12 14
20
0
VGS, GATE SOURCE VOLTAGE (V)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
2.5
2
1
VGS = 0V
Pulsed
VGS = 10V
Pulsed
ID = 300mA
TA = 125°C
TA = 150°C
ID = 150mA
0.1
TA = 85°C
TA = 25°C
1.5
1
TA = 0°C
0.01
0.001
TA = -25°C
0.5
0
TA = -55°C
-75
0
25 50 75
150
100 125
-50 -25
0.5
1
0
1.5
Tch, CHANNEL TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
1
1
VGS = 10V
Pulsed
VGS = 10V
TA= 25°C
Pulsed
TA = 25°C
0.1
0.01
TA = 150°C
0.1
0.01
TA = -55°C
TA = 85°C
VGS = 0V
0.001
0.001
0
0.5
1
1
0.001
0.01
0.1
VSD, SOURCE-DRAIN VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
DS30654 Rev. 3 - 2
3 of 4
www.diodes.com
DMN601TK
(Note 6)
Ordering Information
Device
Packaging
Shipping
DMN601TK-7
SOT-523
3000/Tape & Reel
Notes:
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K7K
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30654 Rev. 3 - 2
4 of 4
DMN601TK
www.diodes.com
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