DMP1012UFDF-7 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMP1012UFDF-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP1012UFDF
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
ID Max
BVDSS
RDS(ON) Max
TC = +25°C
Low On-Resistance
15m @ VGS = -4.5V
20mΩ @ VGS = -3.7V
30mΩ @ VGS = -2.5V
40mΩ @ VGS = -1.8V
-20A
-18A
-16A
-11A
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
-12V
Mechanical Data
Case: U-DFN2020-6 (Type F)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
e4
per MIL-STD-202, Method 208
Applications
Weight: 0.007 grams (Approximate)
Battery Management Application
Power Management Functions
DC-DC Converters
U-DFN2020-6 (Type F)
D
G
Pin1
S
Pin Out
Bottom View
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP1012UFDF-7
DMP1012UFDF-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
PF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
PF
M = Month (ex: 9 = September)
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
2025
Code
F
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
DMP1012UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-12
Unit
V
Gate-Source Voltage
±8
V
VGSS
Steady
State
TC = +25°C
TC = +70°C
TA = +25°C
-20
-16
A
ID
Continuous Drain Current VGS = -4.5V (Note 10)
t<5s (Note 6)
-12.6
-55
A
A
ID
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Avalanche Current (Note 7), L = 0.1mH
IDM
-2.8
-21
A
IS
IAS
A
Avalanche Energy (Note 7,) L = 0.1mH
22
mJ
EAS
Thermal Characteristics
Characteristic
Symbol
PD
Value
0.72
Unit
TA = +25°C
Total Power Dissipation (Note 5)
W
0.46
172
130
2.11
TA = +70°C
Steady State
t<5s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
TA = +25°C
TA = +70°C
Steady State
t<5s
PD
1.36
59
44
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
9.0
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -10V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
nA
—
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.3
—
-0.5
11
-0.9
15
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -5A
VGS = -3.7V, ID = -5A
VGS = -2.5V, ID = -4A
VGS = -1.8V, ID = -1A
VGS = 0V, IS = -10A
12
20
Static Drain-Source On-Resistance
15
30
20
40
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.8
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1344
342
297
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
19.5
31
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = -6V, ID = -10A
2.1
7.9
6.0
32
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = -6V, VGS = -4.5V,
Rg = 1Ω, ID = -8A
71
Turn-Off Delay Time
tD(OFF)
tF
85
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
46
ns
tRR
IF = -12A, di/dt = 500A/μs
44
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package limited.
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© Diodes Incorporated
DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
DMP1012UFDF
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
VGS = -8.0V
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
VDS = -5V
VGS = -1.5V
VGS=-2.0V
VGS = -1.8V
TA = 125oC
TA = 150oC
TA = 85oC
TA = 25oC
TA = -55oC
VGS = -1.0V
2.5
0
0.0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.04
0.03
0.02
0.01
0
0.2
0.18
0.16
0.14
0.12
0.1
ID = -5.0A
VGS = -1.8V
VGS = -2.5V
0.08
0.06
0.04
0.02
0
ID = -2.0A
VGS = -3.7V
VGS = -4.5V
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
1.5
1.2
0.9
0.6
0.02
0.018
0.016
0.014
0.012
0.01
VGS = -4.5V, ID = -5A
VGS = -4.5V
TA = 150oC
TA = 125oC
TA = 85oC
TA = 25oC
VGS = -2.5V, ID = -4A
0.008
0.006
0.004
0.002
0
TA = -55oC
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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© Diodes Incorporated
DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
DMP1012UFDF
0.02
0.018
0.016
0.014
0.012
0.01
1
0.8
0.6
0.4
0.2
0
VGS = -2.5V, ID = -4A
ID = -1mA
VGS = -4.5V, ID = -5A
0.008
0.006
0.004
0.002
0
ID = -250μA
-50
-25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junciton
Temperature
30
25
20
15
10
5
10000
1000
100
f=1MHz
VGS = 0V
Ciss
Coss
TA = 85oC
TA = 125oC
Crss
TA = 25oC
TA = 150oC
TA = -55oC
0
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
12
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
8
6
4
2
0
100
10
PW =100µs
RDS(ON) Limited
PW =1ms
PW =10ms
PW =100ms
PW =1s
1
VDS = -6V, ID = -10A
TJ(Max) = 150℃
TC = 25℃
Single Pulse
0.1
0.01
PW =10s
DC
DUT on 1*MRP Board
VGS= -4.5V
0
10
20
Qg (nC)
Figure 11. Gate Charge
30
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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January 2018
© Diodes Incorporated
DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
DMP1012UFDF
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
RθJA(t) = r(t) * RθJA
RθJA = 172℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
DMP1012UFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57 0.63
0.00 0.05
A3
A1
A
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
-
-
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a 0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
0.65 BSC
z2
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
0.15 BSC
0.36 BSC
D2
E
E2
k1
k1
k2
L
e2
L
k
z1
0.225 0.325 0.275
0.20 BSC
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z( 4x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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© Diodes Incorporated
DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
DMP1012UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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© Diodes Incorporated
DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
相关型号：
DMP1022UFDF-7
Small Signal Field-Effect Transistor, 9.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6, 6 PIN
DIODES
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