DMP2033UVT [DIODES]
Low On-Resistance;型号: | DMP2033UVT |
厂家: | DIODES INCORPORATED |
描述: | Low On-Resistance |
文件: | 总5页 (文件大小:302K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMP2033UVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
ID
•
•
•
•
•
•
Low On-Resistance
V(BR)DSS
RDS(ON) max
TA = +25°C
Low Input Capacitance
65mΩ @VGS = -4.5V
100mΩ @VGS = -2.5V
-4.2A
-3.4A
Fast Switching Speed
-20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
•
•
•
•
Backlighting
•
•
•
Power Management Functions
DC-DC Converters
Motor Control
Terminals: Finish – MatteTin annealed over Copper leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.0013 grams (approximate)
•
TSOT26
D
D
G
1
2
3
6
5
4
D
D
S
Top View
Pin-Out
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP2033UVT-7
DMP2033UVT -13
Case
Packaging
TSOT26
TSOT26
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
20X = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
DMP2033UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Units
V
V
Gate-Source Voltage
±8
VGSS
-4.2
-3.4
Steady
State
TA = +25°C
A = +70°C
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 6)
A
A
ID
T
-10
IDM
Thermal Characteristics
Characteristic
Symbol
Value
Units
W
Total Power Dissipation (Note 5)
1.2
100
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
Rθ
JA
1.7
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
74
°C/W
°C
Rθ
JA
-55 to 150
T
J, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
-1.0
±100
µA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
TJ = +25°C
IGSS
⎯
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.5
⎯
—
45
57
80
9
-0.9
65
V
mꢀ
S
VGS(th)
RDS(ON)
|Yfs|
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.2A
Static Drain-Source On-Resistance
100
200
⎯
V
GS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2A
VDS = -5V, ID = -4A
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
⎯
845
72
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
63
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
10.4
1.5
nC
nC
nC
ns
ns
ns
ns
Qg
Qgs
Qgd
tD(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
GS = -4.5V, VDS = -4V,
Gate-Source Charge
Gate-Drain Charge
ID = -3.5A
1.9
Turn-On Delay Time
6.5
Turn-On Rise Time
13.4
51.5
21.8
VDS = -4V, VGS = -4.5V,
R
G = 6Ω, ID = -1A
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
DMP2033UVT
20
18
20
18
16
14
12
10
8
V
= -5.0V
DS
V
= -8V
GS
V
= -4.5V
GS
16
14
V
V
= -3V
GS
GS
V
= -2V
GS
= -2.5V
12
V
= -1.8V
10
8
GS
6
6
V
= -1.5V
GS
T
= 150°C
A
4
4
T
= 85°C
A
T
= 25°C
V
= -1.2V
A
GS
2
T
= 125°C
2
A
T
= -55°C
A
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.12
0.11
0.10
0.09
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
= -4.5V
GS
T
= 150
°
C
A
0.08
0.07
0.06
T
= 125°C
A
V
= -2.5V
GS
T
= 85°
C
A
0.05
0.04
0.03
T
= 25°C
A
V
= -4.5V
GS
T
= -55°C
A
0.02
0.01
0.00
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
I
= -4.5V
GS
= -10A
D
V
I
= -2.5V
GS
= -5A
D
V
I
= -4.5V
GS
= -10A
D
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°C)
°C)
3 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
DMP2033UVT
1.2
1
20
18
16
14
12
10
8
-I = 1mA
D
0.8
0.6
0.4
0.2
0
T = 150°C
A
-I = 250µA
D
T = 125°C
A
T = 25°C
A
T = 85°C
6
A
T = -55°C
A
4
2
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
Figure 8 Diode Forward Voltage vs. Current
10000
8
7
6
5
4
3
2
1
0
f = 1MHz
C
iss
1000
V
I
= -4V
DS
= -3.5A
D
C
100
oss
C
rss
10
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
TSOT26
e1
Dim Min Max Typ
A
A1
A2
D
E
E1
b
c
e
e1
L
L2
θ
1.00
0.01 0.10
0.84 0.90
−
−
−
−
2.90
2.80
1.60
−
−
0.95
1.90
−
−
−
−
−
−
E
E1
L2
c
0.30 0.45
0.12 0.20
θ
L
4x θ1
e
−
−
−
−
6x b
0.30 0.50
A2
A1
A
0.25
4°
−
−
0°
4°
−
8°
12°
θ1
All Dimensions in mm
4 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
DMP2033UVT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
5 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
相关型号:
DMP2035UFCL-7
Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, U-DFN1616-6, 6 PIN
DIODES
©2020 ICPDF网 联系我们和版权申明