DMP2035U-7 [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET; P沟道增强型MOSFET
| 型号： | DMP2035U-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2035U
P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 3KV
"Green" Device (Note 2)
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram Below
Marking Information: See Page 4
•
•
•
•
•
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Qualified to AEC-Q101 Standards for High Reliability
Drain
D
Gate
Gate
Protection
Diode
Source
S
G
Internal Schematic
TOP VIEW
ESD PROTECTED TO 3kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
±8
Gate-Source Voltage
V
VGSS
TA = 25°C
TA = 70°C
Steady
State
-3.6
-2.9
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
A
A
ID
-24
IDM
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3)
0.81
W
PD
153.5
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t
أ
10s. 4. Repetitive rating, pulse width limited by junction temperature.
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www.diodes.com
May 2009
© Diodes Incorporated
DMP2035U
Document number: DS31830 Rev. 1 - 2
DMP2035U
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
VGS = 0V, ID = -250μA
-20
-
-
-
-
V
μA
μA
BVDSS
IDSS
-
-
-1.0
±10
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
V
V
DS = -20V, VGS = 0V
GS = ±8V, VDS = 0V
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
-0.4
-
-0.7
-1.0
V
VGS(th)
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -4A
23
30
41
35
45
62
mΩ
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
-
-
14
-
S
V
|Yfs|
VSD
-0.7
-1.0
VGS = 0V, IS = -1A
-
-
-
-
-
-
-
-
-
-
-
1610
157
145
9.45
15.4
2.5
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS =-10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS =0V, VGS = 0V, f = 1MHz
VGS =-4.5V, VDS = -10V,
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
I
D =-4A
3.3
16.8
12.4
94.1
42.4
Turn-On Delay Time
Turn-On Rise Time
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6.0Ω, ID = -1A
Turn-Off Delay Time
Turn-Off Fall Time
tD(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
20
25
20
V
= -8.0V
GS
V
= -4.5V
GS
V
= -3.5V
GS
V
= -3.2V
GS
V
= -5V
V
= -3.0V
DS
15
10
GS
V
= -2.0V
GS
V
= -2.5V
GS
15
10
T
= 150°C
A
5
0
5
0
V
= -1.5V
T
= 125°C
GS
T
= 85°C
A
A
T
= 25°C
A
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
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May 2009
© Diodes Incorporated
DMP2035U
Document number: DS31830 Rev. 1 - 2
DMP2035U
0.07
0.06
0.05
0.04
V
= -4.5V
GS
T
= 150°C
= 125°C
A
T
A
0.05
0.04
T
= 85°C
= 25°C
= -55°C
A
0.03
V
= -1.8V
GS
T
A
V
= -2.5V
0.02
0.01
T
GS
A
0.03
0.02
V
= -4.5V
GS
0
4
8
12
16
20
0.1
1
10
100
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
0.06
0.05
1.2
1.0
0.04
0.03
V
= -2.5V
= -5A
GS
I
D
V
= -4.5V
GS
I
= -10A
D
V
= -4.5V
= -10A
0.8
0.6
0.02
0.01
GS
I
V
= -2.5V
D
GS
I
= -5A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
20
18
1.2
1.0
16
14
12
10
8
0.8
0.6
I
= -1mA
D
I
= -250µA
D
T
= 150°C
A
T
= 125°C
0.4
0.2
0
A
6
4
T
= 85°C
A
T
= 25°C
A
T
= -55°C
2
0
A
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
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May 2009
© Diodes Incorporated
DMP2035U
Document number: DS31830 Rev. 1 - 2
DMP2035U
10,000
1,000
100
10,000
1,000
T
T
= 150°C
A
= 125°C
A
C
iss
100
T
= 85°C
A
10
1
T
= 25°C
A
C
oss
T
= -55°C
A
C
rss
0
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
JA
R
= 158°C/W
θ
JA
P(pk)
T
0.01
t
D = 0.01
1
t
2
D = 0.005
- T = P * R (t)
J
A θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
Ordering Information (Note 6)
Part Number
Case
Packaging
DMP2035U-7
SOT-23
3000 / 7” Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MP3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
MP3
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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May 2009
© Diodes Incorporated
DMP2035U
Document number: DS31830 Rev. 1 - 2
DMP2035U
Package Outline Dimensions
A
SOT-23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
M
K
J
K1
K1
L
M
-
D
F
L
0.45
0.085 0.18
0° 8°
0.61
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
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May 2009
© Diodes Incorporated
DMP2035U
Document number: DS31830 Rev. 1 - 2
DMP2035U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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May 2009
© Diodes Incorporated
DMP2035U
Document number: DS31830 Rev. 1 - 2
相关型号：
DMP2035UFCL-7
Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, U-DFN1616-6, 6 PIN
DIODES
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