DMP2035UFCL-7 [DIODES]
Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, U-DFN1616-6, 6 PIN;
| 型号： | DMP2035UFCL-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, U-DFN1616-6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2035UFCL
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
VDSS
Features and Benefits
Typical Off Board Profile of 0.575mm - Ideally Suited for Thin
Applications
ID max
TA = +25°C
RDS(ON) max
Low RDS(ON) - Minimizes Conduction Losses
PCB Footprint of 2.56mm2
24mΩ @VGS = -4.5V
31mΩ @VGS = -2.5V
-6.6 A
-5.8 A
-20V
ESD Protected Gate 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Case: U-DFN1616-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper Leadframe).
Power Management Functions
Analog Switches
e4
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.04 grams (Approximate)
U-DFN1616-6
Pin 1
ESD PROTECTED
Top View
Bottom View
Device Symbol
Top View Pin-Out
Ordering Information (Note 4)
Product
Case
Packaging
DMP2035UFCL-7
U-DFN1616-6
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
25P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
25P
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
DMP2035UFCL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Units
V
V
Gate-Source Voltage
±8
VGSS
Continuous Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
-6.6
-5.3
A
ID
Pulsed Drain Current (380μs Pulse, 1% Duty Cycle)(Note 7)
-40
A
A
IDM
IS
Maximum Continuous Body Diode Forward Current (Note 6)
-1.7
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.74
Unit
W
Power Dissipation (Note 5)
PD
RθJA
169
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
1.6
PD
79
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
-
-
-
-1.0
-100
±10
μA
μA
μA
Zero Gate Voltage Drain Current TJ = +25°C
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V
VGS = ±8V, VDS = 0V
Zero Gate Voltage Drain Current TJ = +150°C (Note 8)
IDSS
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.4
-
-
-1.0
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -8.0A
VGS = -2.5V, ID = -7.0A
VGS = -1.8V, ID = -6.0A
VGS = 0V, IS = -1A
19
24
31
24
31
45
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.5
-0.7
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
1,610
157
145
9.45
29
2,200
240
220
14.5
44
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -8V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
15.4
2.5
21
Qg
VDS = -10V,
ID = -4A
3.8
5
Qgs
Qgd
tD(ON)
tR
3.3
Gate-Drain Charge
16.8
12.4
94.1
42.4
34
Turn-On Delay Time
25
Turn-On Rise Time
VDS = -20V, VGS = -10V,
RG = 6.0Ω, ID = -6A
188
85
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
DMP2035UFCL
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = -8.0V
VGS = -4.5V
VDS = -5V
VGS = -2.0V
VGS = -1.8V
VGS= -2.5V
125℃
VGS = -1.5V
VGS = -1.2V
150℃
85℃
25℃
-55℃
0.0
0
0
0.5
1
1.5
2
2.5
3
0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.08
0.06
0.04
0.02
0
0.03
0.028
0.026
0.024
0.022
0.02
ID = -8.0A
ID = -6.0A
VGS = -2.5V
VGS = -4.5V
0.018
0.016
1
3
5
7
9
11 13 15 17 19 21
0
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.5
1.3
1.1
0.9
0.7
0.026
0.022
0.018
0.014
0.01
VGS = -2.5V, ID = 7.0A
VGS = -10V
150℃
125℃
85℃
VGS = -4.5V, ID = 8.0A
25℃
-55℃
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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© Diodes Incorporated
DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
DMP2035UFCL
0.04
0.035
0.03
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
ID = -1mA
VGS = -2.5V, ID = 7.0A
0.025
0.02
ID = -250μA
VGS = -4.5V, ID = 8.0A
0.015
0.01
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
100000
10000
1000
100
VGS = 0V
150℃
125℃
85℃
TJ = 125oC
10
TJ = 85oC
TJ = 25oC
1
TJ = 150oC
TJ = -55oC
25℃
0.1
0
0
5
10
15
20
0
0.3
0.6
0.9
1.2
1.5
VDS, Drain-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
Figure 9. Diode Forward Voltage vs. Current
8
6
4
2
0
10000
1000
100
f=1MHz
Ciss
Coss
Crss
VDS = -10V, ID = -4A
10
0
5
10
15
20
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
Qg (nC)
Figure 12. Gate Charge
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© Diodes Incorporated
DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
DMP2035UFCL
100
10
PW =100µs
RDS(ON) Limited
PW =1ms
PW =10ms
PW =100ms
PW =1s
1
0.1
0.01
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 4.5V
PW =10s
DC
10
0.01
0.1
1
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 169℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
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© Diodes Incorporated
DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
DMP2035UFCL
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A3
A1
U-DFN1616-6
(Type K)
Min Max
0.55 0.60 0.575
A
Seating Plane
Dim
A
A1
A3
b
Typ
D
0.00
0.05
0.02
0.13
0.25
1.60
0.67
0.20
0.50
1.60
1.40
0.62
0.30
0.175
--
--
0.20
1.55
0.57
0.10
--
0.30
1.65
0.77
0.30
--
D
D2
D2a
e
D2a
D2
E
E2
E2a
E
1.55
1.30
0.52
0.25
--
1.65
1.50
0.72
0.35
--
E2
E2a
L
L( 2x)
z
z( 4x)
b
All Dimensions in mm
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X3
Value
Dimensions
Y
(in mm)
0.500
0.300
0.200
0.720
0.400
0.475
0.620
1.900
C
X
X1
X2
X3
Y
X2
Y1
Y2
X1
Y1
Y2
Y
C
X( 6x)
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DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
DMP2035UFCL
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
相关型号：
DMP2038USS-13
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
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