FMMT455TA [DIODES]
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | FMMT455TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, 晶体 晶体管 局域网 |
| 文件： | 总2页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
FMMT455
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
*
*
*
140 Volt VCEO
E
1 Amp continuous current
C
Ptot= 500 mW
B
PARTMARKING DETAIL
455
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
160
Collector-Emitter Voltage
Emitter-Base Voltage
140
V
5
V
Peak Pulse Current
2
1
A
Continuous Collector Current
Base Current
IC
A
IB
200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL
MIN. MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 160
IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 140
V
IC=10mA*
IE=100µA
VCB=140V
VEB=4V
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
Collector Cut-Off Current ICBO
0.1
µA
Emitter Cut-Off Current
IEBO
0.1
0.7
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=150mA, IB=15mA
Static Forward Current
Transfer Ratio
hFE
100
10 Typ
300
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
Transition
Frequency
fT
100
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
VCB=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 110
FMMT455
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
VCE(sat) v IC
Typical Switching Speeds
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
1
0.1
0.01
0.001
µ
0.1
1
10
100
1000
I
- Collector Current (Amps)
V
CE
- Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 111
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DIODES
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