MMBT4126-7 [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | MMBT4126-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT4124)
Ideal for Medium Power Amplification and
Switching
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
·
C
B
C
B
C
D
TOP VIEW
E
B
Mechanical Data
E
D
G
E
G
H
·
·
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K2B
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
H
K
M
J
J
·
·
L
K
L
M
C
·
·
·
·
a
All Dimensions in mm
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMBT4126
-25
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-4.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
-200
mA
mW
°C/W
°C
Pd
300
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
417
Tj, TSTG
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30106 Rev. 2 - 2
1 of 2
MMBT4126
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = -10mA, IE = 0
-25
-25
-4.0
¾
¾
¾
V
V
IC = -1.0mA, IB = 0
IE = -10mA, IC = 0
VCB = -20V, IE = 0V
VEB = -3.0V, IC = 0V
¾
V
-50
-50
nA
nA
IEBO
Emitter Cutoff Current
¾
ON CHARACTERISTICS (Note 2)
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
120
60
360
¾
hFE
DC Current Gain
¾
IC = -50mA, IB = -5.0mA
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
¾
¾
-0.40
-0.95
V
V
I
C = -50mA, IB = -5.0mA
V
V
V
CB = -5.0V, f = 1.0MHz, IE = 0
EB = -0.5V, f = 1.0MHz, IC = 0
CE = 1.0V, IC = -2.0mA,
Cobo
Cibo
¾
¾
4.5
10
pF
pF
Input Capacitance
hfe
fT
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
120
250
¾
480
¾
¾
MHz
dB
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100mA,
NF
4.0
RS = 1.0kW, f = 1.0kHz
(Note 3)
Ordering Information
Device
Packaging
Shipping
MMBT4126-7
SOT-23
3000/Tape & Reel
Note:
2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K2B
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30106 Rev. 2 - 2
2 of 2
MMBT4126
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