UZXT2M322TC [ZETEX]
Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 2 X 2 MM, MLP322, 5 PIN;型号: | UZXT2M322TC |
厂家: | ZETEX SEMICONDUCTORS |
描述: | Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 2 X 2 MM, MLP322, 5 PIN 开关 晶体管 |
文件: | 总6页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ZXT2M322
MPPS™ Miniature Package Power Solutions
20V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
CEO
V
= 20V; R
= 64m ; I = -3.5A
SAT C
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation transistors offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
2mm x 2mm MLP
(single die)
PCB area and device placement savings
Reduced component count
FEATURES
•
•
•
•
•
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-220mV @-1A)
h
characterised up to -6A
FE
I = -3.5A Continuous Collector Current
C
2mm x 2mm MLP
APPLICATIONS
•
•
•
•
DC - DC Converters (FET Drivers)
Charging Circuits
Power switches
PINOUT
Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXT2M322TA
ZXT2M322TC
7
8mm
8mm
3000
13
10000
DEVICE MARKING
S2
2mm x 2mm Single MLP
underside view
ISSUE 2 - JUNE 2002
1
ZXT2M322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
-25
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current (c)
Continuous Collector Current (a)
Base Current
V
V
V
CBO
CEO
EBO
-20
V
-7.5
-6
V
I
I
I
A
CM
-3.5
-1000
A
C
B
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
P
P
P
1.5
12
W
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
3
24
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Ambient (d)
Junction to Ambient (e)
NOTES
R
R
R
R
θJA
θJA
θJA
θJA
51
125
42
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at tр5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
ISSUE 2 - JUNE 2002
2
ZXT2M322
CCHHAARRAACCTTEERRIISSTTIICCSS
3.5
3.0
10
1
V
Tamb=25°C
CE(SAT)
Limited
2.5
2.0
1.5
1.0
0.5
0.0
2oz Cu
Note: e
DC
1s
100ms
10ms
0.1
1oz Cu
Note: a
1ms
100us
10
Single Pulse, Tamb=25°C
1
0.01
0.1
0
25
50
75 100 125 150
V
Collector-Emitter Voltage (V)
Temperature (°C)
CE
Safe Operating Area
Derating Curve
225
200
175
150
125
100
75
80
60
40
20
0
D=0.5
D=0.2
1oz copper
Single Pulse
D=0.05
D=0.1
50
25
2oz copper
10
0
100µ 1m 10m 100m
1
10 100 1k
0.1
1
100
Pulse Width (s)
BoardCuArea(sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tamb=25°C
jmax=150°C
Continuous
2oz copper
T
1oz copper
0.1
1
10
100
BoardCuArea(sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZXT2M322
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
V
V
-25
-35
V
I =-100A
C
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown
Voltage
-20
-25
V
I =-10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-7.5
-8.5
V
I =-100A
E
(BR)EBO
CBO
I
I
I
-25
-25
-25
-30
nA
nA
nA
mV
V
V
V
=-20V
CB
Emitter Cut-Off Current
=-6V
EBO
EB
Collector Emitter Cut-Off Current
=-16V
CES
CES
Collector-Emitter Saturation
Voltage
V
-19
I =-0.1A, I =-10mA*
C B
CE(sat)
-170
-190
-240
-225
-220 mV
-250 mV
-350 mV
-300 mV
I =-1A, I =-20mA*
C B
I =-1.5A, I =-50mA*
C
B
B
B
I =-2.5A, I =-150mA*
C
I =-3.5A, I =-350mA*
C
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
-1.10
-0.87
-1.075
-0.95
V
V
I =-3.5A, I =-350mA*
C B
BE(sat)
BE(on)
FE
I =-3.5A, V =-2V*
CE
C
Static Forward Current Transfer
Ratio
300
300
150
15
475
450
230
30
I =-10mA, V =-2V*
C CE
I =-0.1A, V =-2V*
C
C
CE
CE
I =-2A, V =-2V*
I =-6A, V =-2V*
CE
C
Transition Frequency
f
150
180
MHz I =-50mA, V =-10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
21
40
30
pF
ns
ns
V
=-10V, f=1MHz
obo
(on)
(off)
CB
t
t
V
=-10V, I =-1A
CC
C
I
=I =10mA
B1 B2
Turn-Off Time
670
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2002
4
ZXT2M322
CHARACTERISTICS
1
100m
10m
0.25
0.20
0.15
0.10
0.05
0.00
IC/IB=50
Tamb=25°C
100°C
25°C
IC/IB=100
IC/IB=50
IC/IB=10
-55°C
1m
100m
10
1m
100m
10
IC10mCollector Current 1(A)
IC10mCollector Current 1(A)
VCE(SAT) vIC
VCE(SAT) vIC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
630
540
450
360
270
180
90
V =2V
IC/IB=50
CE
1.0
100°C
0.8
0.6
0.4
25°C
-55°C
25°C
-55°C
100°C
100m
0
1m
10m
100m
1
10
1m
10
IC10mCollector Current 1(A)
IC Collector Current (A)
h vIC
VBE(SAT) vIC
FE
V =2V
1.0
0.8
0.6
0.4
0.2
CE
-55°C
25°C
100°C
IC10mCollector Current 1(A)
1m
100m
10
VBE(ON) vIC
ISSUE 2 - JUNE 2002
5
ZXT2M322
MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.18
0.17
MAX.
1.00
0.05
0.75
0.25
0.28
0.30
MIN.
MAX.
0.0393
0.002
A
0.0315
0.00
e
E
0.0255 REF
0.0787 BSC
A1
A2
A3
b
0.0255
0.0059
0.0070
0.0066
0.0295
0.0098
0.0110
0.0118
E2
E4
L
0.79
0.99
0.68
0.45
0.031
0.039
0.0267
0.0177
0.48
0.20
0.0188
0.0078
b1
D
L2
r
0.125 MAX.
0.075 BSC
0Њ 12Њ
0.005 REF
0.0029 BSC
0Њ 12Њ
2.00 BSC
0.0787 BSC
D2
D4
1.22
0.56
1.42
0.76
0.0480
0.0220
0.0559
0.0299
⍜
© Zetex plc 2002
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For the latest product information, log on to www.zetex.com
ISSUE 2 - JUNE 2002
6
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