UZXT849KTC [ZETEX]
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3;![UZXT849KTC](http://pdffile.icpdf.com/pdf2/p00244/img/icpdf/UZXT849KTC_1478193_icpdf.jpg)
型号: | UZXT849KTC |
厂家: | ![]() |
描述: | Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 开关 晶体管 |
文件: | 总6页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ZXT849K
30V NPN LOW SATURATION TRANSISTOR IN D-PAK
SUMMARY
BVCEO = 30V : RSAT = 33m typical; IC = 7A
DESCRIPTION
Packaged in the D-Pak outline this high current high perform ance 30V NPN
transistor offers low on state losses m aking it ideal for use in DC-DC circuits
and various driving and power m anagem ent functions.
FEATURES
DPAK
• 7 am ps continuous current
• Up to 20 am ps peak current
• Low equivalent on resistance
• Low saturation voltages
• Excellent hFE perform ance up to 20 am ps
APPLICATIONS
• DC - DC converters
• DC - DC m odules
• Power switches
• Motor control
• Autom otive circuits
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXT849KTC
13”
16m m
2500 units/reel
DEVICE MARKING
TOP VIEW
• ZXT849
ISSUE 2 - DECEMBER 2003
1
S E M IC O N D U C T O R S
ZXT849K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
UNIT
Co lle cto r-b a s e vo lta g e
Co lle cto r-e m itte r vo lta g e
Co lle cto r-e m itte r vo lta g e
Em itte r-b a s e vo lta g e
BV
BV
BV
BV
80
V
CBO
CER
CEO
EBO
80
V
30
V
7
20
V
Pe a k p u ls e cu rre n t
I
I
I
A
A
CM
(b )
Co n tin u o u s co lle cto r cu rre n t
7
C
B
Ba s e cu rre n t
0.5
A
(a )
Po w e r d is s ip a tio n a t T =25°C
A
P
P
P
2.1
W
D
D
D
Lin e a r d e ra tin g fa cto r
16.8
3.2
m W/°C
W
(b )
(c)
Po w e r d is s ip a tio n a t T =25°C
A
Lin e a r d e ra tin g fa cto r
25.6
4.2
m W/°C
W
Po w e r d is s ip a tio n a t T =25°C
A
Lin e a r d e ra tin g fa cto r
33.6
-55 to +150
m W/°C
°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
j s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
59
UNIT
°C/W
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
R
⍜J A
⍜J A
⍜J A
(b )
J u n ctio n to a m b ie n t
39
(c)
J u n ctio n to a m b ie n t
30
NOTES
(a) (For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
ISSUE 2 - DECEMBER 2003
2
S E M IC O N D U C T O R S
ZXT849K
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2003
3
S E M IC O N D U C T O R S
ZXT849K
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
80
80
30
7
TYP. MAX. UNIT CONDITIONS
Co lle cto r-b a s e b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Em itte r-b a s e b re a kd o w n vo lta g e
Co lle cto r cu t-o ff cu rre n t
BV
BV
BV
BV
125
125
40
V
V
I =100A
C
CBO
CER
CEO
EBO
I =1A, R =Յ1k⍀
C
BE
V
I =10m A*
C
8
V
I =100A
E
I
I
I
20
20
n A
n A
n A
V
V
V
=70V
CBO
CB
CB
EB
Co lle cto r cu t-o ff cu rre n t
=70V, R =Յ1k⍀
CER
EBO
BE
Em itte r cu t-o ff cu rre n t
10
=6V
Co lle cto r-e m itte r s a tu ra tio n vo lta g e
V
27
55
40
m V I =0.5A, I =20m A*
C B
CE(S AT)
80
m V I =1A, I =20m A*
C B
115
230
1.04
0.93
190
200
165
90
180
280
1.15
1.1
m V I =2A, I =20m A*
C B
m V I =7A, I =350m A*
C
B
Ba s e -e m itte r s a tu ra tio n vo lta g e
Ba s e -e m itte r tu rn -o n vo lta g e
V
V
H
m V I =7A, I =350m A*
C B
BE(S AT)
BE(ON)
FE
m V I =7A, V =1V*
C
CE
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio
100
100
100
40
I =10m A, V =1V*
C CE
300
I =1A, V =1V*
C CE
I =7A, V =1V*
C
CE
I =20A, V =2V*
C
CE
Tra n s itio n fre q u e n cy
f
100
MHz I =100m A, V =10V
T
C
CE
f=50MHz
Ou tp u t ca p a cita n ce
S w itch in g tim e s
C
75
45
p F
V
=10V, f=1MHz*
OBO
CB
t
t
n S I =1A, V =10V,
ON
OFF
C
CC
630
nS
I
=I =100m A
B1 B2
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
ISSUE 2 - DECEMBER 2003
4
S E M IC O N D U C T O R S
ZXT849K
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2003
5
S E M IC O N D U C T O R S
ZXT849K
PACKAGE OUTLINE
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Min
Millim eters
Min Max
2.30 BSC
Inches
Min Max
0.090 BSC
DIM
DIM
Min
2.18
ᎏ
Max
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
A
A1
b
2.38
0.127
0.89
1.114
5.46
0.609
0.584
6.22
ᎏ
0.086
e
H
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.635
0.762
5.20
0.457
0.457
5.97
5.20
6.35
4.32
0.025
0.030
0.205
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
⍜1Њ
⍜Њ
2.74 REF
0.051 BSC
0.108 REF
0.020 BSC
0.89
1.27
1.01
1.52
10Њ
0.035
0.050
0.040
0.060
10Њ
c2
D
0.635
1.14
0Њ
0.025
0.045
0Њ
D1
E
6.73
ᎏ
0.265
0Њ
15Њ
0Њ
15Њ
E1
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ISSUE 2 - DECEMBER 2003
6
S E M IC O N D U C T O R S
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