EC736014D [E-CMOS]
60V ,60A N-Channel;
| 型号： | EC736014D |
| 厂家： | 
E-CMOS Corporation |
| 描述： | 60V ,60A N-Channel |
| 文件： | 总7页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC736014D
60V 、60A N-Channel
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
Features and Benefits:
ꢀ Advanced MOSFET process technology
ꢀ Special designed for PWM, load switching and
general purpose applications
ꢀ Ultra low on-resistance with low gate charge
ꢀ Fast switching and reverse body recovery
ꢀ 175℃ operating temperature
Main Product Characteristics
60V
12mꢀ (typ.)
60A
V
DSS
R
DS(on)
I
D
Absolute Maximum Ratings
Symbol
Parameter
Max.
60
Units
ID
@ TC = 25°C
Continuous Drain Current, V GS @ 10V
①
A
ID
@ TC = 100°C
Continuous Drain Current, V GS @ 10V
42
①
IDM
Pulsed Drain Current
ꢀ
240
Power Dissipation
ꢁ
115
W
W/°C
V
PD @TC = 25°C
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
0.74
60
V
DS
GS
V
± 20
235
V
E
AS
AS
STG
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
mJ
A
I
39
T
J
T
Operating Junction and Storage Temperature Range
-55 to + 175
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 7
5A21N-Rev.F001
EC736014D
60V 、60A N-Channel
Thermal Resistance
Symbol
Characteristics
Junction-to-case
Junction-to-ambient
Typ.
—
Max.
Units
R
θJC
θJA
ꢁ
1.31
62
ꢂ/W
ꢂ/W
R
—
④
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Min.
60
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Units
V
Conditions
GS = 0V, I = 250ꢁA
GS=10V,I = 30A
DS = VGS, I =250µA
= 125°C
DS = 60V,VGS = 0V
V(BR)DSS Drain-to-Source breakdown voltage
V
V
V
D
R
DS(on)
Static Drain-to-Source on-resistance
12
14
4.0
—
mΩ
D
—
D
VGS(th)
Gate threshold voltage
V
T
J
2.0
—
2
V
IDSS
Drain-to-Source leakage current
Gate-to-Source forward leakage
µA
nA
T
V
V
J
= 150°C
GS =20V
GS = -20V
= 30A,
—
10
100
-100
—
—
IGSS
—
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
45
I
D
nC
ns
V
DS=30V,
GS = 10V
Qgs
Qgd
4
—
V
15
—
td(on)
14.6
14.2
40
—
VGS=10V, VDS=30V,
tr
—
R
R
L
=15Ω,
td(off)
Turn-Off delay time
Fall time
—
GEN=2.5Ω
tf
7.3
1480
190
135
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V
pF
VDS = 25V
—
ƒ = 1MHz
—
Source-Drain Ratings and Characteristics
Conditions
Symbol
Parameter
Min.
Typ.
Max.
Units
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
IS
—
—
60
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
ISM
—
—
240
A
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
33
61
1.3
—
V
I
S
=30A, VGS=0V
= 25°C, I =15A,
di/dt = 100A/µs
trr
Qrr
ns
nC
T
J
F
—
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 7
5A21N-Rev.F001
EC736014D
60V 、60A N-Channel
Test circuits and Waveforms
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 7
5A21N-Rev.F001
EC736014D
60V 、60A N-Channel
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 7
5A21N-Rev.F001
EC736014D
60V 、60A N-Channel
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 7
5A21N-Rev.F001
EC736014D
60V 、60A N-Channel
Ordering and Marking Information
EC736014D XX X
R：Tape & Reel
TO252＝A4
Part Number
Package
TO252
Marking
Marking Information
EC736014DA4R
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 7
5A21N-Rev.F001
EC736014D
60V 、60A N-Channel
Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 7 of 7
5A21N-Rev.F001
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