EC736014J7F2R [E-CMOS]
60V ,40A N-Channel;
| 型号： | EC736014J7F2R |
| 厂家： | 
E-CMOS Corporation |
| 描述： | 60V ,40A N-Channel |
| 文件： | 总4页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC736014J7
60V 、40A N-Channel
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
Features and Benefits:
ꢀ Advanced MOSFET process technology
ꢀ Special designed for PWM, load switching and
general purpose applications
ꢀ Ultra low on-resistance with low gate charge
ꢀ Fast switching and reverse body recovery
ꢀ 175ꢀ operating temperature
Main Product Characteristics
60V
11mꢀ (typ.)
40A
V
DSS
R
DS(on)
I
D
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
I
I
I
D
@ TC = 25°C
@ TC = 100°C
Continuous Drain Current, V GS @ 10V
ꢁ
40
60
A
D
Continuous Drain Current, V GS @ 10V
DM
Pulsed Drain Current
ꢂ
80
P
D
@TC = 25°C
Power Dissipation
ꢃ
115
W
W/°C
V
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
0.74
60
VDS
VGS
EAS
± 20
235
V
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
mJ
A
IAS
39
T
J
T
STG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 4
5A21N-Rev.F001
EC736014J7
60V 、40A N-Channel
Thermal Resistance
Symbol
Characteristics
Junction-to-case
Junction-to-ambient
Typ.
—
Max.
Units
R
θJC
ꢃ
1.31
62
ꢀ/W
ꢀ/W
R
θJA
ꢄ
—
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Min.
60
—
—
1
Typ.
—
Max.
—
16
9
Units
Conditions
GS = 0V, I = 250ꢁA
V(BR)DSS Drain-to-Source breakdown voltage
V
V
V
V
V
V
D
11
GS=10V,I
D
= 30A
R
DS(on)
GS(th)
Static Drain-to-Source on-resistance
Gate threshold voltage
mꢀ
V
6.5
—
GS=10V,ID = 14A
V
3
DS = VGS, ID =250ꢁA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
DS = 60V,VGS = 0V
IDSS
Drain-to-Source leakage current
ꢁA
T
V
V
J
= 150°C
GS =20V
GS = -20V
= 15A,
—
10
100
-100
—
—
—
—
—
—
—
—
—
—
—
IGSS
Gate-to-Source forward leakage
nA
nC
—
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
45
I
D
V
DS=30V,
GS = 10V
Qgs
Qgd
4
V
15
td(on)
15
VGS=10V, VDS=30V,
tr
14
ns
R
R
L
=15ꢀ,
td(off)
Turn-Off delay time
Fall time
40
GEN=2.5ꢀ
tf
7.3
1480
190
135
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Conditions
Symbol
Parameter
Min.
Typ.
Max.
Units
Continuous Source Current
(Body Diode)
—
—
40
A
MOSFET symbol
showing the
IS
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
—
—
80
A
ISM
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
33
61
1.3
—
V
I
S
=30A, VGS=0V
= 25°C, I =15A,
di/dt = 100A/ꢁs
trr
Qrr
ns
nC
T
J
F
—
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 4
5A21N-Rev.F001
EC736014J7
60V 、40A N-Channel
Test circuits and Waveforms
EAS Test Circuit
Gate charge test circuit
Switching Time Test Circuit
Switching Waveforms
Notes:
2
ꢁContinuous current tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
ꢂRepetitive rating; pulse width limited by max. junction temperature.
ꢃThe power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
ꢄThe value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 4
5A21N-Rev.F001
EC736014J7
60V 、40A N-Channel
Ordering and Marking Information
EC736014J7XX X
R：Tape & Reel
PQFN 5×6＝F2
Part Number
Package
Marking
Marking Information
PQFN5×6
EC736014J7F2R
TQFN 5×6 Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 4
5A21N-Rev.F001
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