STPS80L15 [ETC]
LOW DROP OR-ING POWER SCHOTTKY DIODE ; 低压降的OR-ing功率肖特基二极管\n![STPS80L15](http://pdffile.icpdf.com/pdf1/p00010/img/icpdf/STPS8_49632_icpdf.jpg)
型号: | STPS80L15 |
厂家: | ![]() |
描述: | LOW DROP OR-ING POWER SCHOTTKY DIODE
|
文件: | 总4页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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STPS80L15TV
®
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
K2
K1
A2
IF(AV)
VRRM
2 x 40 A
15 V
Tj (max)
VF (max)
125 °C
0.33 V
A1
K2
FEATURES AND BENEFITS
VERY LOW DROP FORWARD VOLTAGE FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
A2
INSULATED PACKAGE:
Insulated voltage = 2500 V(RMS)
Capacitance = 45 pF
K1
A1
DESCRIPTION
Dual Schottky rectifier suited for Switched Mode
Power Supplies and DC to DC power converters.
ISOTOPTM
Packaged in ISOTOPTM, this device is especially
intended for use as an OR-ing diode in fault
tolerant power supply equipments.
ABSOLUTE RATINGS
Symbol
(limiting values, per diode)
Parameter
Value
Unit
V
VRRM
Repetitive peak reverse voltage
15
100
40
IF(RMS) RMS forward current
A
IF(AV)
IFSM
IRRM
Average forward current
Tc = 110°C
A
δ
= 1
Surge non repetitive forward current
Repetitive peak reverse current
tp = 10 ms
Sinusoidal
700
2
A
A
µ
tp = 2 s
F = 1kHz
°
°
Tstg
Tj
Storage temperature range
- 65 to + 150
125
C
C
Maximum operating junction temperature
Critical rate of rise of reverse voltage
µ
V/ s
dV/dt
10000
dPtot
dTj
1
<
* :
thermal runaway condition for a diode on its own heatsink
Rth(j−a)
ISOTOP is a trademark of STMicroelectronics
July 1999 - Ed: 4A
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STPS80L15TV
THERMAL RESISTANCES
Symbol
Parameter
Value
1
Unit
°
Rth (j-c) Junction to case
Per diode
Total
C/W
0.55
0.1
Rth (c)
Coupling
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
°
IR *
Reverse leakage current
Tj = 100 C
VR = 5V
280
11
mA
°
Tj = 25 C
VR = 12V
Tj = 100°C
0.44
1.1
A
V
VF *
Forward voltage drop
Tj = 25°C
IF = 40 A
IF = 40 A
0.43
0.33
°
Tj = 125 C
0.28
Pulse test : * tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
2
P = 0.19 x IF(AV) + 3.25 10-3 x IF (RMS)
Fig. 1:
Fig. 2:
Average forward current versus ambient
Average forward power dissipation versus
δ
average forward current (per diode).
temperature ( =1, per diode).
PF(av)(W)
IF(av)(A)
14
45
δ = 0.2
δ = 0.1
δ = 0.5
Rth(j-a)=Rth(j-c)
δ = 0.05
40
35
30
25
12
10
8
δ = 1
Rth(j-a)=5°C/W
20
15
10
5
6
T
T
4
2
tp
=tp/T
δ
Tamb(°C)
tp
=tp/T
IF(av) (A)
20 25
δ
0
0
0
25
50
75
100
125
0
5
10
15
30
35
40
45
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STPS80L15TV
Fig. 3:
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse(per diode).
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Zth(j-c)/Rth(j-c)
IM(A)
1.0
500
450
400
350
300
0.8
δ = 0.5
0.6
250
Tc=50°C
200
150
100
50
0.4
δ = 0.2
Tc=75°C
IM
0.2
t
Tc=110°C
δ = 0.1
t(s)
δ=0.5
Single pulse
tp(s)
0
1E-3
1E-2
1E-1
1E+0
0.0
1E-4
1E-3
1E-2
1E-1
1E+0
Fig. 5:
Fig. 6:
Reverse leakage current versus reverse
Junction capacitance versus reverse
voltage applied (typical values, per diode).
voltage applied (typical values, per diode).
C(nF)
IR(mA)
10
F=1MHz
Tj=25°C
1E+3
Tj=100°C
Tj=75°C
1E+2
5
1E+1
Tj=25°C
2
1
1E+0
VR(V)
VR(V)
1E-1
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
1
2
5
10
20
Fig. 7:
current (per diode).
Forward voltage drop versus forward
IFM(A)
200.0
100.0
Tj=100°C
(typical values)
Tj=100°C
(Maximum values)
Tj=25°C
(Maximum values)
10.0
VFM(V)
1.0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
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STPS80L15TV
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
Max.
12.20
9.10
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
A
A1
B
11.80
8.90
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
7.8
8.20
C
0.75
0.85
C2
D
1.95
2.05
37.80
31.50
25.15
23.85
38.20
31.70
25.50
24.15
D1
E
E1
E2
G
24.80 typ.
0.976 typ.
14.90
12.60
3.50
15.10
12.80
4.30
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.594
0.504
0.169
0.169
0.197
0.69
G1
G2
F
4.10
4.30
F1
P
4.60
5.00
4.00
4.30
P1
S
4.00
4.40
0.173
1.193
30.10
30.30
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS80L15TV STPS80L15TV
ISOTOP
28g
10
Tube
(without screws)
Cooling method: by conduction (C)
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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