SUB50N03-20C [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | TO-264VAR ; 晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 50A I（ D） | TO- 264VAR\n
| 型号： | SUB50N03-20C |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | TO-264VAR
|
| 文件： | 总5页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUB50N03-20C
Vishay Siliconix
Current Sensing MOSFET, N-Channel 30-V (D-S)
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.015 @ V = 10 V
50
GS
30
a
0.02 @ V = 4.5 V
GS
48
D (Tab, 3)
2
D PAK-5
(1)
(2)
(4)
KELVIN
G
1 2 3 4 5
SENSE
S (5)
N-Channel MOSFET
G
D
S
SENSE
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
GS
V
V
"20
a
T
= 25_C
= 125_C
50
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
C
32
A
Pulsed Drain Current
Avalanche Current
I
100
25
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
31
mJ
AR
c
T
= 25_C
= 25_C
83
C
b
Maximum Power Dissipation
P
W
D
d
T
A
2.7
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
Junction-to-Ambient
Junction-to-Case
PCB Mount
R
55
thJA
thJC
C/W
R
1.8
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71175
S-02575—Rev. C, 27-Nov-00
www.vishay.com
1
SUB50N03-20C
Vishay Siliconix
MOSFET SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
GS
D
V
V
= V , I = 250 mA
V
3
DS
GS DS
GS(th)
V
= 0 V, V = "20 V
I
"100
1
nA
DS
GS
GSS
V
= 30 V, V = 0 V
GS
DS
V
V
= 30 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
DS
GS
J
DSS
= 30 V, V = 0 V, T = 175_C
150
GS
J
a
On-State Drain Current
I
V
= 5 V, V = 10 V
50
30
A
D(on)
DS
GS
V
= 10 V, I = 25 A
0.012
0.019
0.022
0.016
0.015
0.024
0.027
0.02
GS
D
V
= 10 V, I = 25 A, T = 125_C
GS
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 10 V, I = 25 A, T = 175_C
D
J
V
= 4.5 V, I = 24 A
D
GS
a
Forward Transconductance
g
fs
V
= 15 V, I = 25 A
S
DS
D
Dynamicb
Input Capacitance
C
1960
380
180
35
iss
Output Capacitance
C
oss
V
= 0 V, V = 25 V, f = 1 MHz
pF
nC
GS
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
50
g
c
Gate-Source Charge
Q
Q
7.6
5.6
10
V
= 15 V, V = 20 V, I = 50 A
GS D
gs
gd
DS
c
Gate-Drain Charge
c
Turn-On Delay Time
t
20
180
60
d(on)
c
Rise Time
t
93
r
V
= 15 V, R = 0.3 W
L
DD
ns
c
Turn-Off Delay Time
t
30
I
] 50 A, V = 10 V, R = 2.5 W
GEN G
d(off)
D
c
Fall Time
t
f
10
20
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
50
100
1.6
70
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
I
F
= 50 A, V = 0 V
1.3
35
V
ns
A
SD
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
1.5
I
F
= 50 A, di/dt = 100 A/ms
Q
0.026
mC
rr
Current Sense Characteristics
Current Sensing Ratio
r
I
D
= 1 A, V
= 10 V, R = 2.2 W
SENSE
420
520
3.5
620
GSS
Mirror Active Resistance
r
V
= 10 V, I = 10 mA
W
m(on)
GS
D
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
e. Guaranteed by design, not subject to production testing.
b. Independent of operating temperature.
Document Number: 71175
S-02575—Rev. C, 27-Nov-00
www.vishay.com
2
SUB50N03-20C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
80
60
40
20
0
T
C
= –55_C
V
= 10 thru 5 V
GS
25_C
80
125_C
4 V
60
40
20
0
3 V
2 V
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
Transconductance
On-Resistance vs. Drain Current
80
60
40
20
0
0.04
0.03
0.02
0.01
0.00
T
C
= –55_C
25_C
125_C
V
= 4.5 V
GS
V
= 10 V
GS
0
20
40
60
80
100
0
20
40
60
80
100
V
– Gate-to-Source Voltage (V)
GS
I
D
– Drain Current (A)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
10
8
V
= 15 V
= 50 A
GS
I
D
C
iss
6
4
C
oss
2
C
rss
0
0
0
6
12
18
24
30
0
5
10
Q – Total Gate Charge (nC)
g
15
20
25
30
35
V
– Drain-to-Source Voltage (V)
DS
Document Number: 71175
S-02575—Rev. C, 27-Nov-00
www.vishay.com
3
SUB50N03-20C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
I
= 10 V
= 25 A
GS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
200
100
60
50
40
30
20
10
0
Limited
by r
DS(on)
0.0001 s
10
0.001 s
0.01 s
T
= 25_C
C
Single Pulse
0.1 s
dc
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
DS
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 71175
S-02575—Rev. C, 27-Nov-00
www.vishay.com
4
SUB50N03-20C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SENSE DIE
On-Resistance vs. Sense Current
On-Resistance vs. Gate-Source Voltage
10
10
8
8
I
D
= 10 mA
6
4
2
0
V
= 4.5 V
6
GS
V
= 10 V
GS
4
2
0
0.00
0.02
0.04
0.06
(A)
0.08
0.10
0
2
4
6
8
10
I
V
GS
– Gate-to-Source Voltage (V)
SENSE
Current Ratio (I
)
(MAIN)/IS
vs. Gate-Source Voltage (Figure 1)
1000
800
600
400
200
0
R
R
= 6.6 W
= 4.7 W
S
G
S
R
R
= 2.2 W
= 1.1 W
S
SENSE
S
KELVIN
V
G
S
R
S
Figure 1
0
2
4
6
8
10
12
14
16
V
– Gate-to-Source Voltage (V)
GS
Document Number: 71175
S-02575—Rev. C, 27-Nov-00
www.vishay.com
5
相关型号：
SUB60N06-14
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
VISHAY
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