XP04601|XP4601 [ETC]
Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n
| 型号： | XP04601|XP4601 |
| 厂家： | 
ETC |
| 描述： | Composite Device - Composite Transistors
|
| 文件： | 总6页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP04601 (XP4601)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
+0.05
For general amplification
0.12
–0.02
0.2 0.05
5
6
4
3
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.1
■ Basic Part Number
• 2SD0601A (2SD601A) + 2SB0709A (2SB709A)
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Tr1
Collector-base voltage
(Emitter open)
VCBO
60
V
Collector-emitter voltage
(Base open)
VCEO
VEBO
50
7
V
V
Marking Symbol: 5C
Internal Connection
Emitter-base voltage
(Collector open)
Collector current
IC
ICP
100
200
−60
mA
mA
V
6
5
4
Peak collector current
Tr2
Collector-base voltage
(Emitter open)
VCBO
Tr1
Tr2
3
Collector-emitter voltage
(Base open)
VCEO
VEBO
−50
−7
V
V
1
2
Emitter-base voltage
(Collector open)
Collector current
IC
ICP
PT
−100
−200
mA
mA
mW
°C
Peak collector current
Overall Total power dissipation
Junction temperature
150
Tj
150
Storage temperature
Tstg
−55 to +150
°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00187BED
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XP04601
■ Electrical Characteristics Ta = 25°C 3°C
• Tr1
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
100
460
0.3
µA
µA
ICEO
hFE
160
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
150
3.5
V
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
−100
460
µA
µA
ICEO
hFE
160
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −100 mA, IB = −10 mA
− 0.3 − 0.5
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
2.7
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
250
200
150
100
50
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
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XP04601
Characteristics charts of Tr1
IC VCE
IC IB
IB VBE
1200
1000
800
600
400
200
0
240
200
160
120
80
60
Ta = 25°C
IB = 160 µA
VCE = 10 V
Ta = 25°C
VCE = 10 V
Ta = 25°C
50
140 µA
40
120 µA
100 µA
30
80 µA
20
10
0
60 µA
40 µA
40
20 µA
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
0
200
400
600
800
1000
( )
Base-emitter voltage VBE V
(
)
Base current IB µA
(
)
V
Collector-emitter voltage VCE
IC VBE
VCE(sat) IC
hFE IC
102
10
600
500
400
300
200
100
0
240
200
160
120
80
IC / IB = 10
VCE = 10 V
VCE = 10 V
Ta = 75°C
25°C
25°C
1
−25°C
Ta = 75°C
−25°C
25°C
10−1
Ta = 75°C
−25°C
40
10−2
10−1
0
1
10
102
10−1
1
10
102
0
0.4
0.8
1.2
1.6
2.0
( )
Collector current IC mA
(
)
V
(
)
Base-emitter voltage VBE
Collector current IC mA
fT IE
NV IC
240
200
160
120
80
300
240
180
120
60
VCB = 10 V
Ta = 25°C
VCE
= 10 V
GV = 80 dB
Function = FLAT
Ta = 25°C
Rg = 100 kΩ
22 kΩ
4.7 kΩ
40
0
10
0
−10−1
−1
−10
−102
102
103
(
)
Collector current IC µA
Emitter current IE (mA)
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XP04601
Characteristics charts of Tr2
IC VCE
IC IB
IB VBE
−60
−400
−350
−300
−250
−200
−150
−100
−50
−60
−50
−40
−30
−20
−10
0
VCE = –5 V
Ta = 25°C
Ta = 25°C
VCE = −5 V
Ta = 25°C
IB = −300 µA
−50
−250 µA
−40
−200 µA
−30
−150 µA
−20
−100 µA
−10
−50 µA
0
0
0
−4
−8
−12
−16
0
−100
−200
−300
−400
0
−0.4
−0.8
−1.2
−1.6
(
)
(
)
( )
Base-emitter voltage VBE V
Collector-emitter voltage VCE
V
Base current IB µA
IC VBE
VCE(sat) IC
hFE IC
−10
−1
600
500
400
300
200
100
0
−240
−200
−160
−120
−80
−40
0
IC / IB = 10
VCE = −10 V
VCE = −5 V
25°C
−25°C
Ta = 75°C
Ta = 75°C
25°C
Ta = 75°C
25°C
−25°C
−10−1
−10−2
−10−3
−25°C
−1
−10
−102
−103
−1
−10
−102
−103
0
−0.4
−0.8
−1.2
−1.6
−2.0
(
)
Collector current IC mA
(
)
Collector current IC mA
(
)
V
Base-emitter voltage VBE
fT IE
Cob VCB
NF IE
8
6
5
4
3
2
1
0
160
140
120
100
80
VCB = −10 V
Ta = 25°C
f = 1 MHz
IE = 0
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
7
6
5
4
3
2
1
0
Ta = 25°C
60
40
20
0
10−2
10−1
1
10
−1
−10
−102
10−1
1
10
Emitter current IE (mA)
102
(
)
V
Emitter current IE (mA)
Collector-base voltage VCB
SJJ00187BED
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XP04601
NF IE
h parameter IE
h parameter VCE
20
18
16
14
12
10
8
VCB = −5 V
Rg = 50 kΩ
Ta = 25°C
VCE = −5 V
IE = 2 mA
f = 270 Hz
Ta = 25°C
f = 270 Hz
Ta = 25°C
hfe
hfe
102
10
1
102
10
1
hoe (µS)
f = 100 Hz
hoe (µS)
1 kHz
10 kHz
6
hie (kΩ)
hre (× 10−4
)
4
hie (kΩ)
2
hre (× 10−4
)
0
10−1
1
10
10−1
1
10
−10−1
−1
−10
Emitter current IE (mA)
Emitter current IE (mA)
(
)
V
Collector-emitter voltage VCE
SJJ00187BED
5
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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