EFA018A-70 [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA018A-70 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA018A-70
Excelics
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
•
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+18.5dBm TYPICAL OUTPUT POWER
10.5dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED
GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
44
19
4
20
D
G
•
•
•
S
S
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
Noise Figure
Vds=2V, Ids=15mA
Associated Gain
Vds=2V, Ids=15mA
f=12GHz
16.5
18.5
18.5
10.5
8.0
P1dB
dBm
dB
%
f=18GHz
f=12GHz
f=18GHz
9.0
G1dB
PAE
NF
f=12GHz
f=12GHz
33
1.1
dB
dB
f=12GHz
10.5
Ga
Idss
Gm
Saturated Drain Current Vds=3V, Vgs=0V
25
20
50
30
80
mA
mS
V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0 mA
Vp
-2.0
-15
-14
480*
-3.5
BVgd
BVgs
Rth
Drain Breakdown Voltage Igd=0.5mA
Source Breakdown Voltage Igs=0.5mA
Thermal Resistance
-10
-6
V
V
oC/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
10V
CONTINUOUS2
6V
Vds
Vgs
Ids
-6V
-4V
Idss
40mA
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
4mA
0.7mA
17dBm
175oC
-65/175oC
@ 3dB Compression
150 oC
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/150 oC
285mW
240mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA018A-70
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
6V, 1/2 Idss
FREQ
(GHz) MAG ANG
--- S11 ---
--- S21 ---
--- S12 ---
MAG ANG MAG
--- S22 ---
ANG
MAG ANG
2.467 164.6
2.404 148.7
2.307 133.4
2.278 119.2
2.271 105.4
1.0 0.992
2.0 0.973
3.0 0.948
4.0 0.927
5.0 0.896
6.0 0.862
7.0 0.824 -103.6
8.0 0.785 -116.7
9.0 0.745 -137.4
10.0 0.712 -157.8
11.0 0.685 -167.8
12.0 0.659 178.6
13.0 0.661 151.4
14.0 0.678 126.4
15.0 0.668 112.7
16.0 0.663
17.0 0.681
18.0 0.716
19.0 0.704
20.0 0.736
21.0 0.799
22.0 0.786
23.0 0.753
24.0 0.771
25.0 0.753
26.0 0.720
-15.2
-31.3
-47.1
-62.2
-76.8
-89.8
0.013
0.024
0.033
0.040
0.046
0.050
0.050
0.047
0.043
0.041
0.039
0.039
0.043
0.047
0.053
0.059
0.059
0.081
0.070
0.071
0.072
0.067
0.060
80.7 0.813
66.9 0.799
56.3 0.788
47.1 0.778
38.0 0.757
28.7 0.730
18.8 0.709
8.7 0.679
6.9 0.675
4.4 0.658
4.7 0.636 -109.4
11.3 0.625 -121.6
10.3 0.608 -130.8
7.7 0.598 -141.9
3.2 0.600 -161.3
-4.7 0.592 -179.9
-3.2 0.558
-17.9 0.607
-34.8 0.622
-45.7 0.677
-58.3 0.666
-77.2 0.676
-97.4 0.674
-9.6
-21.0
-32.1
-40.9
-49.5
-60.6
-71.2
-80.0
-85.5
-95.2
2.217
2.144
2.099
2.141
2.132
2.113
2.119
2.080
1.968
1.941
1.927
1.733
1.654
91.4
77.5
64.5
50.1
34.6
21.5
8.0
-9.0
-26.0
-42.0
-58.8
-74.2
-86.1
96.6
77.3
64.4
48.0
30.3
18.9
7.3
-11.7
-30.9
-43.1
-58.4
170.3
158.0
135.6
119.0
107.4
95.1
76.0
57.6
42.6
28.8
1.596 -103.7
1.560 -120.9
1.480 -136.6
1.378 -151.5
1.305 -170.3
1.249 169.6
1.245 152.3
1.255 136.8
0.055 -120.5 0.671
0.055 -141.1 0.655
0.060 -161.3 0.649
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