FDD6296_NL [FAIRCHILD]
Power Field-Effect Transistor, 15A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3;
| 型号： | FDD6296_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 15A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2004
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
·
50A, 30 V
RDS(ON) = 8.8 mW @ VGS = 10 V
RDS(ON) = 11.3 mW @ VGS = 4.5 V
·
·
·
Low gate charge
Fast switching
Applications
·
·
DC/DC converter
High performance trench technology for extremely
low RDS(ON)
Power management
D
D
G
S
I-PAK
(TO-251AA)
G
D-PAK
(TO-252)
G D S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
± 20
50
VGSS
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
ID
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
A
15
Pulsed
100
PD
W
Power Dissipation
@TC=25°C
@TA=25°C
@TA=25°C
52
(Note 1a)
(Note 1b)
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
RqJC
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
RqJA
Package Marking and Ordering Information
Device Marking
Device
FDD6296
FDU2696
Package
Reel Size
13’’
Tape width
Quantity
2500 units
75
FDD6296
D-PAK (TO-252)
I-PAK (TO-251)
12mm
N/A
FDU6296
Tube
FDD6296/FDU6296 Rev C(W)
Ó2004 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
IAS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A
Drain-Source Avalanche Current
165
15
mJ
A
Off Characteristics
Drain–Source Breakdown
Voltage
BVDSS
30
V
VGS = 0 V,
ID = 250 mA
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
29
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = 24 V,
VGS = 0 V
1
mA
±
100
IGSS
Gate–Body Leakage
nA
VGS =± 20 V, VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.7
3
V
VDS = VGS
,
ID = 250 mA
Gate Threshold Voltage
Temperature Coefficient
–0.5
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
7.5
9.0
9.3
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V, ID = 15 A, TJ=125°C
ID = 15 A
ID = 13 A
8.8
11.3
15.0
mW
gFS
Forward Transconductance
VDS = 5 V,
ID = 15 A
58
S
Dynamic Characteristics
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Ciss
Coss
Crss
RG
Input Capacitance
1440
400
140
1.3
pF
pF
pF
W
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
6
19
11
46
23
ns
ns
RGEN = 6 W
29
13
ns
ns
Qg
Qg
Qgs
Qgd
VDS = 15V, ID = 15 A, VGS = 10 V
22.5 31.5
nC
nC
nC
nC
VDS = 15V,
VGS = 5 V
ID = 15 A,
12.2
4
17
3.5
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.2
1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 3.2 A
Voltage
VSD
0.74
(Note 2)
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 15 A,
diF/dt = 100 A/µs
25
13
nS
nC
Qrr
FDD6296/FDU6296 Rev. C(W)
Electrical Characteristics (cont’d)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
R
qJA = 40°C/W when mounted on
b)
R
qJA = 96°C/W when mounted
a 1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package
RDS(ON)
current limitation is 21A
FDD6296/FDU6296 Rev. C(W)
Typical Characteristics
100
1.8
1.6
1.4
1.2
1
VGS=10V
6.0V
4.0V
VGS = 3.5V
80
60
40
20
0
4.5V
3.5V
4.0V
4.5V
5.0V
6.0V
10V
3.0V
0.8
0
20
40
60
80
100
0
1
2
3
4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.8
0.025
0.02
ID = 25A
ID = 50A
1.6
1.4
1.2
1
VGS = 10V
0.015
0.01
TA = 125oC
TA = 25oC
0.8
0.6
0.005
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
90
60
30
0
1000
100
VGS = 0V
VDS = 10V
10
TA = 125oC
1
25oC
TA =125oC
0.1
-55oC
-55oC
0.01
0.001
0.0001
25oC
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6296/FDU6296 Rev. C(W)
Typical Characteristics
1800
1200
600
0
10
f = 1MHz
VGS = 0 V
ID = 15A
VDS = 10V
8
Ciss
15V
6
20V
4
2
0
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
80
60
40
20
0
RDS(ON) LIMIT
SINGLE PULSE
R
qJA = 96°C/W
TA = 25°C
100
10
100µs
1ms
10ms
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
R
qJA = 96oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 96 °C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.0
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6296/FDU6296 Rev. C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerSaver™
PowerTrench
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SuperFET™
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SuperSOT™-6
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MicroFET™
MicroPak™
MICROWIRE™
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Quiet Series™
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TruTranslation™
UHC™
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Across the board. Around the world.™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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