FDMA1032CZ [FAIRCHILD]
20V Complementary PowerTrench MOSFET; 20V互补的PowerTrench MOSFET
| 型号： | FDMA1032CZ |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 20V Complementary PowerTrench MOSFET |
| 文件： | 总9页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2006
FDMA1032CZ
20V Complementary PowerTrench® MOSFET
General Description
Features
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset and other ultra-portable applications. It
• Q1: N-Channel
3.7 A, 20V.
RDS(ON) = 68 mΩ @ VGS = 4.5V
RDS(ON) = 86 mΩ @ VGS = 2.5V
features an independent N-Channel
& P-Channel
• Q2: P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
–3.1 A, –20V. RDS(ON) = 95 mΩ @ VGS = –4.5V
RDS(ON) = 141 mΩ @ VGS = –2.5V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• RoHS Compliant
PIN 1
S1 G1 D2
D1
D2
D1
S1
G1
D2
1
2
3
6
5
4
G2
S2
D1 G2 S2
MicroFET 2x2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Q1
20
Q2
–20
±12
–3.1
–6
Units
V
VGS
Gate-Source Voltage
V
A
±12
3.7
6
Drain Current – Continuous
– Pulsed
(Note 1a)
ID
PD
W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.4
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
032
FDMA1032CZ
7’’
8mm
3000 units
FDMA1032CZ Rev B (W)
©2006 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Q1
Q2
20
–20
V
VGS = 0 V,
VGS = 0 V,
ID = 250 µA
ID = –250 µA
Voltage
Breakdown Voltage
Temperature Coefficient
Q1
Q2
15
–12
∆BVDSS
∆TJ
IDSS
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
mV/°C
µA
Zero Gate Voltage Drain
Current
Gate-Body Leakage
VDS = 16 V,
VDS = –16 V,
VGS = ±12 V,
VGS = 0 V
VGS = 0 V
VDS = 0 V
Q1
Q2
All
1
–1
±10
IGSS
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Q1
Q2
0.6
1.0
1.5
V
VDS = VGS
VDS = VGS
,
,
ID = 250 µA
ID = –250 µA
–0.6 –1.0 –1.5
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
–4
4
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 3.7 A
mV/°C
mΩ
Static Drain-Source
On-Resistance
Q1
37
50
53
68
86
90
V
GS = 2.5 V, ID = 3.3 A
VGS = 4.5 V, ID = 3.7 A, TJ = 125°C
VGS = –4.5V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS = –4.5 V, ID = –3.1 A,TJ = 125°C
Q2
60
88
87
95
141
140
mΩ
gFS
Forward Transconductance
VDS = 10 V,
VDS = –10 V,
ID = 3.7 A
ID = –3.1 A
Q1
Q2
16
–11
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
340
540
80
120
60
pF
pF
pF
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Output Capacitance
Q2
VDS = –10 V, VGS = 0 V, f = 1.0 MHz
Reverse Transfer
Capacitance
100
FDMA1032CZ Rev B (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
13
8
11
14
37
3
36
4
7
16
24
16
20
26
59
6
58
6
10
ns
ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
Q2
ns
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
ns
Qg
Qgs
Qgd
Q1
nC
nC
nC
VDS = 10 V, ID = 3.7 A, VGS = 4.5 V
0.7
1.1
1.1
2.4
Q2
VDS = –10 V,ID =– 3.1 A,
VGS =– 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.1
–1.1
1.2
A
V
VSD
trr
Drain-Source Diode Forward VGS = 0 V, IS = 1.1 A
(Note 2)
(Note 2)
0.7
–0.8
11
25
2
Voltage
VGS = 0 V, IS = –1.1 A
–1.2
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
Q1
ns
nC
IF = 3.7 A, dIF/dt = 100 A/µs
Q2
Qrr
IF = –3.1 A, dIF/dt = 100 A/µs
9
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad of 2 oz. copper on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
(a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper
(c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper
a) 86oC/W when
mounted on a
1in2 pad of
b) 173oC/W when
mounted on a
minimum pad of
2 oz copper
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDMA1032CZ Rev B (W)
Typical Characteristics Q1 (N-Channel)
6
2
1.8
1.6
1.4
1.2
1
2.5V
VGS = 4.5V
3.5V
2.0V
VGS = 2.0V
5
4
3
2
1
0
3.0V
2.5V
3.0V
3.5V
4.0V
4.5V
1.5V
0.8
0
0.2
0.4
0.6
0.8
1
1.2
150
2.5
0
1
2
3
4
5
6
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.13
1.6
1.5
1.4
1.3
1.2
1.1
1
ID = 3.7A
GS = 4.5V
ID = 1.85A
V
0.11
0.09
0.07
0.05
0.03
TA = 125oC
0.9
0.8
0.7
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
0
2
V
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
6
VGS = 0V
VDS = 5V
10
1
5
4
3
2
1
0
0.1
TA = 125oC
0.01
0.001
0.0001
25oC
TA = 125oC
-55oC
-55oC
25oC
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ Rev B (W)
Typical Characteristics Q1 (N-Channel)
10
500
400
300
200
100
0
f = 1MHz
VGS = 0 V
VDS = 5V
ID = 3.7A
15V
8
6
4
2
0
10V
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RθJA = 173°C/W
T
A = 25°C
RDS(ON) LIMIT
10
100us
1ms
10ms
100ms
1s
1
10s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 173°C/W
TA = 25°C
0.1
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =173 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
T
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ Rev B (W)
Typical Characteristics: Q2 (P-Channel)
6
2.6
2.2
1.8
1.4
1
VGS
=
2.5V
VGS = -2.0V
5
4
3
2
1
0
2.0V
3.5V
3.0V
-2.5V
-3.0V
-3.5V
-4.0V
-4.5V
1.5V
0.6
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
6
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
1.5
1.4
1.3
1.2
1.1
1
ID = -3.1A
VGS = -4.5V
ID = -1.55A
0.16
0.12
0.08
0.04
TA = 125oC
0.9
0.8
0.7
TA = 25oC
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
6
100
VGS = 0V
VDS = -5V
5
4
3
2
1
0
10
1
TA = 125oC
0.1
25oC
0.01
TA = 125oC
-55oC
-55oC
0.001
25oC
0.0001
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ Rev B (W)
Typical Characteristics: Q2 (P-Channel)
1000
800
600
400
200
0
10
f = 1MHz
GS = 0 V
ID = -3.1A
V
8
VDS = -5V
-15V
6
-10V
Ciss
4
2
0
Coss
Crss
0
2
4
6
8
10
12
14
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Gate Charge Characteristics.
Figure 19. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RθJA = 173°C/W
TA = 25°C
10
RDS(ON) LIMIT
100us
1ms
10ms
100ms
1
1s
10s
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 173oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 20. Maximum Safe Operating Area.
Figure 21. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =173 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
T
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ Rev B (W)
FDMA1032CZ Rev B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
ACEx™
FAST
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
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SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
PowerTrench
®
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
®
HiSeC™
TinyLogic
2
EcoSPARK™
I C™
MSXPro™
OCX™
TINYOPTO™
TruTranslation™
UHC™
2
E CMOS™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
EnSigna™
FACT™
FACT Quiet Series™
OCXPro™
OPTOLOGIC
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UniFET™
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OPTOPLANAR™
PACMAN™
POP™
UltraFET
Across the board. Around the world.™
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Wire™
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The Power Franchise
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
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