FDMA1032CZ [FAIRCHILD]

20V Complementary PowerTrench MOSFET; 20V互补的PowerTrench MOSFET
FDMA1032CZ
型号: FDMA1032CZ
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

20V Complementary PowerTrench MOSFET
20V互补的PowerTrench MOSFET

晶体 晶体管 开关 光电二极管 PC
文件: 总9页 (文件大小:164K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
May 2006  
FDMA1032CZ  
20V Complementary PowerTrench® MOSFET  
General Description  
Features  
This device is designed specifically as a single package  
solution for a DC/DC 'Switching' MOSFET in cellular  
handset and other ultra-portable applications. It  
Q1: N-Channel  
3.7 A, 20V.  
RDS(ON) = 68 m@ VGS = 4.5V  
RDS(ON) = 86 m@ VGS = 2.5V  
features an independent N-Channel  
& P-Channel  
Q2: P-Channel  
MOSFET with low on-state resistance for minimum  
conduction losses. The gate charge of each MOSFET  
is also minimized to allow high frequency switching  
directly from the controlling device. The MicroFET 2x2  
package offers exceptional thermal performance for its  
physical size and is well suited to switching applications.  
–3.1 A, –20V. RDS(ON) = 95 m@ VGS = –4.5V  
RDS(ON) = 141 m@ VGS = –2.5V  
Low profile – 0.8 mm maximum – in the new package  
MicroFET 2x2 mm  
RoHS Compliant  
PIN 1  
S1 G1 D2  
D1  
D2  
D1  
S1  
G1  
D2  
1
2
3
6
5
4
G2  
S2  
D1 G2 S2  
MicroFET 2x2  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Q1  
20  
Q2  
–20  
±12  
–3.1  
–6  
Units  
V
VGS  
Gate-Source Voltage  
V
A
±12  
3.7  
6
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
ID  
PD  
W
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
1.4  
0.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
(Note 1c)  
(Note 1d)  
86 (Single Operation)  
173 (Single Operation)  
69 (Dual Operation)  
151 (Dual Operation)  
RθJA  
RθJA  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
032  
FDMA1032CZ  
7’’  
8mm  
3000 units  
FDMA1032CZ Rev B (W)  
©2006 Fairchild Semiconductor Corporation  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Type Min Typ Max Units  
Off Characteristics  
BVDSS  
Drain-Source Breakdown  
Q1  
Q2  
20  
–20  
V
VGS = 0 V,  
VGS = 0 V,  
ID = 250 µA  
ID = –250 µA  
Voltage  
Breakdown Voltage  
Temperature Coefficient  
Q1  
Q2  
15  
–12  
BVDSS  
TJ  
IDSS  
ID = 250 µA, Referenced to 25°C  
ID = –250 µA, Referenced to 25°C  
mV/°C  
µA  
Zero Gate Voltage Drain  
Current  
Gate-Body Leakage  
VDS = 16 V,  
VDS = –16 V,  
VGS = ±12 V,  
VGS = 0 V  
VGS = 0 V  
VDS = 0 V  
Q1  
Q2  
All  
1
–1  
±10  
IGSS  
µA  
On Characteristics  
(Note 2)  
VGS(th)  
Gate Threshold Voltage  
Q1  
Q2  
0.6  
1.0  
1.5  
V
VDS = VGS  
VDS = VGS  
,
,
ID = 250 µA  
ID = –250 µA  
–0.6 –1.0 –1.5  
Gate Threshold Voltage  
Temperature Coefficient  
Q1  
Q2  
–4  
4
VGS(th)  
TJ  
RDS(on)  
ID = 250 µA, Referenced to 25°C  
ID = –250 µA, Referenced to 25°C  
VGS = 4.5 V, ID = 3.7 A  
mV/°C  
mΩ  
Static Drain-Source  
On-Resistance  
Q1  
37  
50  
53  
68  
86  
90  
V
GS = 2.5 V, ID = 3.3 A  
VGS = 4.5 V, ID = 3.7 A, TJ = 125°C  
VGS = –4.5V, ID = –3.1 A  
VGS = –2.5 V, ID = –2.5 A  
VGS = –4.5 V, ID = –3.1 A,TJ = 125°C  
Q2  
60  
88  
87  
95  
141  
140  
mΩ  
gFS  
Forward Transconductance  
VDS = 10 V,  
VDS = –10 V,  
ID = 3.7 A  
ID = –3.1 A  
Q1  
Q2  
16  
–11  
S
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
Q1  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
340  
540  
80  
120  
60  
pF  
pF  
pF  
VDS = 10 V, VGS = 0 V, f = 1.0 MHz  
Output Capacitance  
Q2  
VDS = –10 V, VGS = 0 V, f = 1.0 MHz  
Reverse Transfer  
Capacitance  
100  
FDMA1032CZ Rev B (W)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Type Min Typ Max Units  
Switching Characteristics (Note 2)  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Q1  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
8
13  
8
11  
14  
37  
3
36  
4
7
16  
24  
16  
20  
26  
59  
6
58  
6
10  
ns  
ns  
VDD = 10 V, ID = 1 A,  
VGS = 4.5 V, RGEN = 6 Ω  
Q2  
ns  
VDD = –10 V, ID = –1 A,  
VGS = –4.5 V, RGEN = 6 Ω  
ns  
Qg  
Qgs  
Qgd  
Q1  
nC  
nC  
nC  
VDS = 10 V, ID = 3.7 A, VGS = 4.5 V  
0.7  
1.1  
1.1  
2.4  
Q2  
VDS = –10 V,ID =– 3.1 A,  
VGS =– 4.5 V  
Drain–Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
1.1  
–1.1  
1.2  
A
V
VSD  
trr  
Drain-Source Diode Forward VGS = 0 V, IS = 1.1 A  
(Note 2)  
(Note 2)  
0.7  
–0.8  
11  
25  
2
Voltage  
VGS = 0 V, IS = –1.1 A  
–1.2  
Diode Reverse Recovery  
Time  
Diode Reverse Recovery  
Charge  
Q1  
ns  
nC  
IF = 3.7 A, dIF/dt = 100 A/µs  
Q2  
Qrr  
IF = –3.1 A, dIF/dt = 100 A/µs  
9
Notes:  
1. RθJA is determined with the device mounted on a 1 in2 pad of 2 oz. copper on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is  
determined by the user's board design.  
(a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB  
(b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper  
(c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB  
(d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper  
a) 86oC/W when  
mounted on a  
1in2 pad of  
b) 173oC/W when  
mounted on a  
minimum pad of  
2 oz copper  
2 oz copper  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%  
FDMA1032CZ Rev B (W)  
Typical Characteristics Q1 (N-Channel)  
6
2
1.8  
1.6  
1.4  
1.2  
1
2.5V  
VGS = 4.5V  
3.5V  
2.0V  
VGS = 2.0V  
5
4
3
2
1
0
3.0V  
2.5V  
3.0V  
3.5V  
4.0V  
4.5V  
1.5V  
0.8  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
150  
2.5  
0
1
2
3
4
5
6
VDS, DRAIN-SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with  
Drain Current and Gate Voltage.  
0.13  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
ID = 3.7A  
GS = 4.5V  
ID = 1.85A  
V
0.11  
0.09  
0.07  
0.05  
0.03  
TA = 125oC  
0.9  
0.8  
0.7  
0.6  
TA = 25oC  
-50  
-25  
0
25  
50  
75  
100  
125  
0
2
V
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
GS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. On-Resistance Variation with  
Temperature.  
Figure 4. On-Resistance Variation with  
Gate-to-Source Voltage.  
100  
6
VGS = 0V  
VDS = 5V  
10  
1
5
4
3
2
1
0
0.1  
TA = 125oC  
0.01  
0.001  
0.0001  
25oC  
TA = 125oC  
-55oC  
-55oC  
25oC  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0.5  
1
1.5  
2
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics.  
Figure 6. Body Diode Forward Voltage Variation  
with Source Current and Temperature.  
FDMA1032CZ Rev B (W)  
Typical Characteristics Q1 (N-Channel)  
10  
500  
400  
300  
200  
100  
0
f = 1MHz  
VGS = 0 V  
VDS = 5V  
ID = 3.7A  
15V  
8
6
4
2
0
10V  
Ciss  
Coss  
Crss  
0
2
4
6
8
10  
0
5
10  
15  
20  
Qg, GATE CHARGE (nC)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 7. Gate Charge Characteristics.  
Figure 8. Capacitance Characteristics.  
100  
50  
40  
30  
20  
10  
0
SINGLE PULSE  
RθJA = 173°C/W  
T
A = 25°C  
RDS(ON) LIMIT  
10  
100us  
1ms  
10ms  
100ms  
1s  
1
10s  
DC  
VGS = 4.5V  
SINGLE PULSE  
RθJA = 173°C/W  
TA = 25°C  
0.1  
0.01  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
VDS, DRAIN-SOURCE VOLTAGE (V)  
t1, TIME (sec)  
Figure 9. Maximum Safe Operating Area.  
Figure 10. Single Pulse Maximum Power  
Dissipation.  
1
D = 0.5  
RθJA(t) = r(t) * RθJA  
RθJA =173 °C/W  
0.2  
0.1  
P(pk)  
0.1  
0.05  
t1  
0.02  
0.01  
t2  
J - TA = P * RθJA(t)  
Duty Cycle, D = t1 / t2  
T
SINGLE PULSE  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, TIME (sec)  
Figure 11. Transient Thermal Response Curve.  
Thermal characterization performed using the conditions described in Note 1b.  
Transient thermal response will change depending on the circuit board design.  
FDMA1032CZ Rev B (W)  
Typical Characteristics: Q2 (P-Channel)  
6
2.6  
2.2  
1.8  
1.4  
1
VGS  
=
2.5V  
VGS = -2.0V  
5
4
3
2
1
0
2.0V  
3.5V  
3.0V  
-2.5V  
-3.0V  
-3.5V  
-4.0V  
-4.5V  
1.5V  
0.6  
0
0.4  
0.8  
1.2  
1.6  
2
0
1
2
3
4
5
6
-VDS, DRAIN-SOURCE VOLTAGE (V)  
-ID, DRAIN CURRENT (A)  
Figure 12. On-Region Characteristics.  
Figure 13. On-Resistance Variation with  
Drain Current and Gate Voltage.  
0.2  
1.5  
1.4  
1.3  
1.2  
1.1  
1
ID = -3.1A  
VGS = -4.5V  
ID = -1.55A  
0.16  
0.12  
0.08  
0.04  
TA = 125oC  
0.9  
0.8  
0.7  
TA = 25oC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 14. On-Resistance Variation with  
Temperature.  
Figure 15. On-Resistance Variation with  
Gate-to-Source Voltage.  
6
100  
VGS = 0V  
VDS = -5V  
5
4
3
2
1
0
10  
1
TA = 125oC  
0.1  
25oC  
0.01  
TA = 125oC  
-55oC  
-55oC  
0.001  
25oC  
0.0001  
0
0.5  
1
1.5  
2
2.5  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
-VGS, GATE TO SOURCE VOLTAGE (V)  
-VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 16. Transfer Characteristics.  
Figure 17. Body Diode Forward Voltage Variation  
with Source Current and Temperature.  
FDMA1032CZ Rev B (W)  
Typical Characteristics: Q2 (P-Channel)  
1000  
800  
600  
400  
200  
0
10  
f = 1MHz  
GS = 0 V  
ID = -3.1A  
V
8
VDS = -5V  
-15V  
6
-10V  
Ciss  
4
2
0
Coss  
Crss  
0
2
4
6
8
10  
12  
14  
0
4
8
12  
16  
20  
Qg, GATE CHARGE (nC)  
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 18. Gate Charge Characteristics.  
Figure 19. Capacitance Characteristics.  
100  
50  
40  
30  
20  
10  
0
SINGLE PULSE  
RθJA = 173°C/W  
TA = 25°C  
10  
RDS(ON) LIMIT  
100us  
1ms  
10ms  
100ms  
1
1s  
10s  
DC  
VGS = -4.5V  
SINGLE PULSE  
RθJA = 173oC/W  
TA = 25oC  
0.1  
0.01  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
-VDS, DRAIN-SOURCE VOLTAGE (V)  
t1, TIME (sec)  
Figure 20. Maximum Safe Operating Area.  
Figure 21. Single Pulse Maximum  
Power Dissipation.  
1
D = 0.5  
RθJA(t) = r(t) * RθJA  
RθJA =173 °C/W  
0.2  
0.1  
P(pk)  
0.1  
0.05  
t1  
0.02  
0.01  
t2  
J - TA = P * RθJA(t)  
Duty Cycle, D = t1 / t2  
T
SINGLE PULSE  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, TIME (sec)  
Figure 22. Transient Thermal Response Curve.  
Thermal characterization performed using the conditions described in Note 1c.  
Transient thermal response will change depending on the circuit board design.  
FDMA1032CZ Rev B (W)  
FDMA1032CZ Rev B (W)  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
®
ACEx™  
FAST  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
PowerEdge™  
PowerSaver™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TCM™  
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
CROSSVOLT™  
DOME™  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
®
PowerTrench  
®
QFET  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
μSerDes™  
ScalarPump™  
SILENT SWITCHER  
SMART START™  
SPM™  
®
HiSeC™  
TinyLogic  
2
EcoSPARK™  
I C™  
MSXPro™  
OCX™  
TINYOPTO™  
TruTranslation™  
UHC™  
2
E CMOS™  
i-Lo™  
ImpliedDisconnect™  
IntelliMAX™  
EnSigna™  
FACT™  
FACT Quiet Series™  
OCXPro™  
OPTOLOGIC  
®
UniFET™  
®
®
OPTOPLANAR™  
PACMAN™  
POP™  
UltraFET  
Across the board. Around the world.™  
VCX™  
Wire™  
®
The Power Franchise  
Programmable Active Droop™  
Power247™  
Stealth™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE  
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,  
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I19  

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