FDP33N25_07 [FAIRCHILD]
250V N-Channel MOSFET; 250V N沟道MOSFET
| 型号： | FDP33N25_07 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 250V N-Channel MOSFET |
| 文件： | 总10页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2007
TM
UniFET
FDP33N25 / FDPF33N25
250V N-Channel MOSFET
Features
Description
•
•
•
•
•
33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
Low gate charge ( typical 36.8 nC)
Low Crss ( typical 39 pF)
Fast switching
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D
S
G
D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDP33N25 FDPF33N25
Unit
VDSS
Drain-Source Voltage
Drain Current
250
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
33
20.4
33*
20.4*
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
132
132*
VGSS
EAS
IAR
Gate-Source voltage
± 30
918
33
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
23.5
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
235
37
W
- Derate above 25°C
1.89
0.29
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP33N25 FDPF33N25
Unit
°C/W
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.53
0.5
3.4
--
RθCS
RθJA
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP33N25 / FDPF33N25 Rev. B
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDP33N25
Device
FDP33N25
FDPF33N25
Package
TO-220
Reel Size
Tape Width
Quantity
-
-
-
-
50
50
FDPF33N25
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
ID = 250μA, Referenced to 25°C
250
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
0.25
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 16.5A
VDS = 40V, ID = 16.5A
3.0
--
--
5.0
0.094
--
V
Ω
S
Static Drain-Source
On-Resistance
0.077
26.6
gFS
Forward Transconductance
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
1640
330
39
2135
430
59
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125V, ID = 33A
RG = 25Ω
--
--
--
--
--
--
--
35
230
75
80
470
160
250
48
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
120
36.8
10
ns
Qg
VDS = 200V, ID = 33A
VGS = 10V
nC
nC
nC
Qgs
Qgd
--
17
--
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
33
132
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 33A
--
V
VGS = 0V, IS = 33A
220
1.71
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, I = 33A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 33A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDP33N25 / FDPF33N25 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
VGS
102
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
101
150oC
25oC
-55oC
* Notes :
1. VDS = 40V
* Notes :
1. 250μs Pulse Test
100
o
2. 250μs Pulse Test
2. TC = 25 C
100
10-1
100
101
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
0.20
102
VGS = 10V
0.15
101
150oC
0.10
25oC
VGS = 20V
0.05
* Notes :
1. VGS = 0V
o
* Note : TJ = 25 C
2. 250μs Pulse Test
100
0.2
0.00
0
20
40
60
80
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
4000
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
VDS = 50V
C
10
VDS = 125V
C
VDS = 200V
3000
2000
1000
0
Coss
8
C
iss
6
4
2
* Note :
1. VGS = 0 V
C
rss
2. f = 1 MHz
* Note : ID = 33A
0
10-1
100
101
0
10
20
30
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP33N25 / FDPF33N25 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 16.5 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FDP33N25
Figure 9-2. Maximum Safe Operating Area
for FDPF33N25
102
102
10 μs
10 μs
100 μs
100 μs
1 ms
1 ms
10 ms
100 ms
101
100
10-1
101
10 ms
DC
Operation in This Area
is Limited by R DS(on)
100 ms
Operation in This Area
DC
is Limited by R DS(on)
100
* Notes :
* Notes :
1. TC = 25 o
2. TJ = 150 o
C
1. TC = 25 o
C
2. TJ = 150 o
C
C
3. Single Pulse
3. Single Pulse
10-1
100
100
101
102
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
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FDP33N25 / FDPF33N25 Rev. B
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP33N25
100
10-1
10-2
D=0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
* Notes :
1. ZθJC(t) = 0.53 oC/W Max.
single pulse
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF33N25
D=0.5
100
0.2
0.1
0.05
PDM
10-1
t1
0.02
0.01
t2
* Notes :
1. ZθJC(t) = 3.4 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
5
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FDP33N25 / FDPF33N25 Rev. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP33N25 / FDPF33N25 Rev. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
www.fairchildsemi.com
FDP33N25 / FDPF33N25 Rev. B
Mechanical Dimensions
TO-220
Dimensions in Millimeters
8
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FDP33N25 / FDPF33N25 Rev. B
Mechanical Dimensions (Continued)
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
9
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FDP33N25 / FDPF33N25 Rev. B
tm
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
This datasheet contains preliminary data; supplementary data will be
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make changes at any time without notice to improve design.
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Not In Production
This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for refer-
ence information only.
Rev. I26
10
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FDP33N25 / FDPF33N25 Rev. B
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