FDPF190N15A [FAIRCHILD]
N-Channel PowerTrench® MOSFET 150V, 27.4A, 19mΩ; N沟道MOSFET PowerTrench® 150V ， 27.4A ， 19mÎ ©
| 型号： | FDPF190N15A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 150V, 27.4A, 19mΩ |
| 文件： | 总9页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2011
FDPF190N15A
N-Channel PowerTrench® MOSFET
150V, 27.4A, 19mΩ
Features
Description
•
•
•
•
•
•
RDS(on) = 14.7mΩ ( Typ.)@ VGS = 10V, ID = 27.4A
Low Gate Charge ( Typ. 30nC)
Low Crss ( Typ. 56pF)
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Fast Switching
100% Avalanche Tested
Application
Improved dv/dt Capability
•
•
•
•
•
DC to DC Converters
Synchronous Rectification for Server/Telecom PSU
Battery Charger
•
RoHS Compliant
AC motor drives and Uninterruptible Power Supplies
Off-line UPS
D
G
TO-220F
(Retractable)
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
Rating
150
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
27.4
ID
Drain Current
A
17.4
IDM
Drain Current
(Note 1)
(Note 2)
(Note 3)
110
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
261
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
33
PD
Power Dissipation
0.26
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Units
Rating
3.8
RθJC
RθJA
oC/W
62.5
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. A2
1
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Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF190N15A
FDPF190N15A
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
D = 250μA, Referenced to 25oC
DS = 120V, VGS = 0V
150
-
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.14
V/oC
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 120V, TC = 150oC
500
±100
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 27.4A
VDS = 10V, ID = 27.4A
2.0
-
-
4.0
19.0
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
14.7
64
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
2020
700
56
2685
pF
pF
pF
pF
nC
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Output Capacitance
930
85
-
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Coss(er)
Qg(tot)
Qgs
VDS = 75V, VGS = 0V
252
30
39
-
VDS = 120V, ID = 27.4A
8.8
7.3
V
GS = 10V
Qgd
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
-
-
-
-
-
18
16
32
8
46
42
74
26
-
ns
ns
ns
ns
Ω
VDD = 75V, ID = 27.4A
GS = 10V, RGEN = 4.7Ω
Turn-On Rise Time
V
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
ESR
Equivalent Series Resistance (G-S)
f = 1MHz
1.5
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
27.4
110
1.3
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 27.4A
-
V
76
0.18
ns
μC
V
GS = 0V, ISD = 27.4A
dIF/dt = 100A/μs, VDD = 120V(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, I = 13.2A, R = 25Ω, Starting T = 25°C
AS
G
J
3. I ≤ 27.4A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDPF190N15A Rev. A2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
200
VGS = 15.0V
*Notes:
10.0V
1. VDS = 10V
100
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
2. 250μs Pulse Test
150oC
25oC
10
-55oC
10
4
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
1
2
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
0.020
0.015
0.010
200
100
150oC
VGS = 10V
25oC
10
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
1
0.0
0
25
50
75
100
125
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5000
10
Ciss
VDS = 30V
VDS = 75V
VDS = 120V
8
6
4
2
0
1000
Coss
100
*Note:
1. VGS = 0V
Crss
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
= C
gd
oss
rss
gd
10
5
*Note: ID = 27.4A
24
0.1
1
10
100 200
0
8
16
32
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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FDPF190N15A Rev. A2
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.10
1.05
1.00
2.5
2.0
1.5
1.0
0.5
0.0
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 27.4A
0.90
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
Figure 10. Maximum Drain Current
500
30
100
25
20
15
10
5
100μs
10
1ms
Operation in This Area
is Limited by R DS(on)
10ms
1
0.1
100ms
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0
25
0.01
50
75
100
125
150
0.1
1
10
100 300
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
VDS, Drain to Source Voltage [V]
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FDPF190N15A Rev. A2
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
5
1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.1
0.02
0.01
*Notes:
1. ZθJC(t) = 3.8oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
Rectangular Pulse Duration [sec]
10-2
10-1
100
101
100
FDPF190N15A Rev. A2
5
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FDPF190N15A Rev. A2
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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FDPF190N15A Rev. A2
7
Package Dimensions
TO-220F (Retractable)
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
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FDPF190N15A Rev. A2
8
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Datasheet contains the design specifications for product development. Specifications
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Rev. I54
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