FQB4P25 [FAIRCHILD]
250V P-Channel MOSFET; 250V P沟道MOSFET
| 型号： | FQB4P25 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 250V P-Channel MOSFET |
| 文件： | 总9页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
FQB4P25TM
Power Field-Effect Transistor, 4A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB4P40
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FQB4P40TM_NL
Power Field-Effect Transistor, 3.5A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 174
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FQB50N06
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FQB50N06LTM
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FQB50N06LTM
功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，52.4 A，21 mΩ，D2PAKWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 174
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ONSEMI
FQB50N06TM
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FQB50N06TM
50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 174
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ROCHESTER
FQB50N06TM
功率 MOSFET，N 沟道，QFET®， 60 V，50 A，22 mΩ，D2PAKWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 174
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ONSEMI
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FQB55N06TM
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FQB55N10TM
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ONSEMI
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FQB5N20L
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FAIRCHILD
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