FQB55N06TM [FAIRCHILD]
Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3;
| 型号： | FQB55N06TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总9页 (文件大小：603K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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