FQD20N06TM [FAIRCHILD]

N-Channel QFET MOSFET; N沟道MOSFET QFET
FQD20N06TM
型号: FQD20N06TM
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

N-Channel QFET MOSFET
N沟道MOSFET QFET

文件: 总8页 (文件大小:545K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
April 2013  
FQD20N06  
N-Channel QFET MOSFET  
®
60 V, 16.8 A, 63 m  
Description  
Features  
This N-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor®’s proprietary  
planar stripe and DMOS technology. This advanced  
MOSFET technology has been especially tailored to reduce  
on-state resistance, and to provide superior switching  
performance and high avalanche energy strength. These  
devices are suitable for switched mode power supplies,  
audio amplifier, DC motor control, and variable switching  
power applications.  
16.8 A, 60 V, RDS(on) = 63 m(Max) @ VGS = 10V,  
D = 8.4 A  
I
Low Gate Charge (Typ.11.5 nC)  
Low Crss (Typ. 25 pF)  
100% Avalanche Tested  
D
D
   
G
G
D-PAK  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQD20N06  
60  
Unit  
V
Drain-Source Voltage  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
16.8  
10.6  
67.2  
25  
A
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
155  
mJ  
A
16.8  
3.8  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C) *  
mJ  
V/ns  
W
7.0  
2.5  
Power Dissipation (TC = 25°C)  
38  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
0.30  
-55 to +150  
W/°C  
°C  
TJ, TSTG  
TL  
Maximum lead temperature for soldering purposes,  
300  
°C  
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
FQD20N06  
3.28  
Unit  
°C/W  
°C/W  
°C/W  
RJC  
RJA  
RJA  
Thermal Resistance, Junction-to-Case, Max.  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient, Max.  
50  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
1
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
Off Characteristics  
BVDSS  
VGS = 0 V, ID = 250 A  
D = 250 A, Referenced to 25°C  
Drain-Source Breakdown Voltage  
60  
--  
--  
--  
--  
V
BVDSS  
Breakdown Voltage Temperature  
Coefficient  
I
0.07  
V/°C  
/
TJ  
IDSS  
V
DS = 60 V, VGS = 0 V  
DS = 48 V, TC = 125°C  
--  
--  
--  
--  
--  
--  
--  
--  
1
A  
A  
nA  
nA  
Zero Gate Voltage Drain Current  
V
10  
IGSSF  
IGSSR  
VGS = 25 V, VDS = 0 V  
VGS = -25 V, VDS = 0 V  
Gate-Body Leakage Current, Forward  
Gate-Body Leakage Current, Reverse  
100  
-100  
On Characteristics  
VGS(th)  
VDS = VGS, ID = 250 A  
Gate Threshold Voltage  
2.0  
--  
4.0  
V
S
RDS(on)  
Static Drain-Source  
On-Resistance  
--  
--  
VGS=10V,ID=8.4A  
0.050 0.063  
gFS  
VDS = 25 V, ID = 8.4 A  
Forward Transconductance  
--  
10  
--  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
--  
--  
--  
450  
170  
25  
590  
220  
35  
pF  
pF  
pF  
V
DS = 25 V, VGS = 0 V,  
Output Capacitance  
f = 1.0 MHz  
Reverse Transfer Capacitance  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
--  
--  
--  
--  
--  
--  
--  
5
45  
20  
25  
11.5  
3
20  
100  
50  
60  
15  
--  
ns  
ns  
VDD = 30 V, ID = 10 A,  
RG = 25   
ns  
(Note 4)  
(Note 4)  
ns  
Qg  
nC  
nC  
nC  
VDS = 48 V, ID = 20 A,  
Qgs  
Qgd  
VGS = 10 V  
4.5  
--  
Drain-Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
--  
--  
--  
--  
--  
--  
--  
16.8  
67.2  
1.5  
--  
A
A
ISM  
VSD  
trr  
Maximum Pulsed Drain-Source Diode Forward Current  
VGS = 0 V, IS = 16.8 A  
GS = 0 V, IF = 20 A,  
dIF / dt = 100 A/s  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
--  
V
V
43  
50  
ns  
nC  
Qrr  
Reverse Recovery Charge  
--  
Notes:  
1. Repetitive Rating : Pulse width limited by maximum junction temperature  
2. L = 640H, I = 16.8A, V = 25V, R = 25 Starting T = 25°C  
AS  
DD  
G
J
3. I 20A, di/dt 300A/s, V  
BV Starting T = 25°C  
4. Essentially independent of operating temperature  
SD  
DD  
DSS, J  
2
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
Typical Characteristics  
V
Top : 15.0GVS  
10.0V  
8.0V  
7.0V  
6.0V  
5.5V  
Bottom: 5.0 V  
101  
1
10  
100  
150  
25℃  
Notes :  
1. VDS = 25V  
Notes :  
2. 250μs Pulse Test  
1. 250μs Pulse Test  
2. T = 25℃  
-55℃  
0
C
10  
-1  
10  
-1  
0
10  
1
10  
2
4
6
8
10  
10  
VGS, Gate-SourceVoltage[V]  
V , Drain-Source Voltage [V]  
DS  
Figure 1. On-Region Characteristics  
Figure 2. Transfer Characteristics  
100  
80  
60  
40  
20  
0
VGS = 10V  
VGS =20V  
101  
100  
Notes:  
1. VGS = 0V  
2. 250μs Pulse Test  
150℃  
25℃  
Note : T = 25℃  
J
-1  
0
10  
20  
30  
40  
50  
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
ID, Drain Current [A]  
V , Source-Drain voltage [V]  
SD  
Figure 3. On-Resistance Variation vs.  
Drain Current and Gate Voltage  
Figure 4. Body Diode Forward Voltage  
Variation vs. Source Current and  
Temperature  
1200  
12  
10  
8
C
iss = Cgs + Cgd (Cds = shorted)  
C
oss = C + C  
gd  
C
rss = Cds  
gd  
VDS = 30V  
VDS = 48V  
C
800  
400  
0
oss  
Notes :  
1. VGS = 0 V  
2. f = 1 MHz  
C
iss  
6
4
C
rss  
2
Note : ID = 20A  
0
0
2
4
6
8
10  
12  
-1  
0
10  
1
10  
10  
QG, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
3
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
Typical Characteristics (Continued)  
1.2  
1.1  
1.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Notes:  
0.9  
1. V = 0 V  
2. IDG=S 250 μA  
Notes :  
1. V = 10 V  
2. IDG=S 8.4 A  
0.8  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
T, Junction Temperature [oC]  
T, Junction Temperature [oC]  
J
J
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
103  
102  
101  
100  
10-1  
20  
15  
10  
5
OperationinThisArea  
is Limited by RDS(on)  
100 s  
1 ms  
10 ms  
DC  
Notes :  
1. TC = 25 o  
C
2. T = 150 o  
C
J
3. Single Pulse  
0
25  
10-1  
100  
101  
102  
50  
75  
100  
125  
150  
TC, Case Temperature []  
VDS, Drain-Source Voltage [V]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
D = 0 .5  
1 0 0  
0 .2  
N o t e s  
1 . Z θ J C(t )  
2 . D u t y Fa c t o r , D =t 1 /t 2  
3 . T J M TC P D M Z θ J C(t )  
:
=
3 .2 8 /W M a x.  
0 .1  
-
=
*
0 .0 5  
0 .0 2  
1 0 -1  
0 .0 1  
PDM  
s in g le p u ls e  
t1  
t2  
1 0 -2  
1 0 -5  
1 0 -4  
1 0 - 3  
1 0 -2  
1 0 -1  
1 0 0  
1 0 1  
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]  
Figure 11. Transient Thermal Response Curve  
4
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
Gate Charge Test Circuit & Waveform  
VGS  
Same Type  
50KΩ  
as DUT  
Qg  
12V  
200nF  
10V  
300nF  
VDS  
VGS  
Qgs  
Qgd  
DUT  
3mA  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
VDS  
90%  
VDS  
VDD  
VGS  
RG  
10%  
VGS  
DUT  
10V  
td(on)  
tr  
td(off)  
tf  
t on  
t off  
Unclamped Inductive Switching Test Circuit & Waveforms  
BVDSS  
--------------------  
BVDSS - VDD  
L
1
2
2
----  
EAS  
=
L IAS  
VDS  
I D  
BVDSS  
IAS  
RG  
VDD  
ID (t)  
VDD  
VDS (t)  
DUT  
10V  
t p  
t p  
Time  
5
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
Peak Diode Recovery dv/dt Test Circuit & Waveforms  
+
DUT  
VDS  
_
I SD  
L
Driver  
RG  
Same Type  
as DUT  
VDD  
VGS  
• dv/dt controlled by RG  
• ISD controlled by pulse period  
Gate Pulse Width  
--------------------------  
VGS  
D =  
Gate Pulse Period  
10V  
( Driver )  
IFM , Body Diode Forward Current  
I SD  
di/dt  
( DUT )  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VSD  
VDS  
( DUT )  
VDD  
Body Diode  
Forward Voltage Drop  
6
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
Mechanical Dimensions  
D-PAK  
Dimensions in Millimeters  
www.fairchildsemi.com  
7
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
2Cool™  
FPS™  
Sync-Lock™  
®*  
®
tm  
AccuPower™  
F-PFS™  
AX-CAP®*  
FRFET®  
PowerTrench®  
PowerXS™  
BitSiC™  
Global Power ResourceSM  
Green Bridge™  
Green FPS™  
Green FPS™ e-Series™  
Gmax™  
TinyBoost™  
TinyBuck™  
Build it Now™  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
DEUXPEED®  
Dual Cool™  
EcoSPARK®  
EfficentMax™  
ESBC™  
Programmable Active Droop™  
QFET®  
TinyCalc™  
QS™  
TinyLogic®  
Quiet Series™  
RapidConfigure™  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™  
TranSiC®  
and Better™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
SignalWise™  
SmartMax™  
SMART START™  
Solutions for Your Success™  
SPM®  
TriFault Detect™  
TRUECURRENT®*  
SerDes™  
®
MicroPak™  
Fairchild®  
MicroPak2™  
MillerDrive™  
MotionMax™  
mWSaver™  
STEALTH™  
UHC®  
Ultra FRFET™  
UniFET™  
VCX™  
VisualMax™  
VoltagePlus™  
XS™  
SuperFET®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SupreMOS®  
FAST®  
FastvCore™  
FETBench™  
OptoHiT™  
OPTOLOGIC®  
OPTOPLANAR®  
SyncFET™  
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY  
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY  
THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used here in:  
1. Life support devices or systems are devices or systems which, (a) are  
intended for surgical implant into the body or (b) support or sustain life,  
and (c) whose failure to perform when properly used in accordance with  
instructions for use provided in the labeling, can be reasonably  
expected to result in a significant injury of the user.  
2. A critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or  
effectiveness.  
ANTI-COUNTERFEITING POLICY  
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,  
www.Fairchildsemi.com, under Sales Support.  
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their  
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed  
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the  
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild  
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild  
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of  
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and  
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is  
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications  
may change in any manner without notice.  
Advance Information  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later  
date. Fairchild Semiconductor reserves the right to make changes at any time without  
notice to improve design.  
Preliminary  
First Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to  
make changes at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Full Production  
Datasheet contains specifications on a product that is discontinued by Fairchild  
Semiconductor. The datasheet is for reference information only.  
Not In Production  
Rev. I64  
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQD20N06 Rev. C0  
8

相关型号:

FQD20N06_09

60V N-Channel MOSFET
FAIRCHILD

FQD24N08

80V N-Channel MOSFET
FAIRCHILD

FQD24N08TF

80V N-Channel MOSFET
FAIRCHILD

FQD24N08TM

Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD

FQD26N03L

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | TO-252AA
ETC

FQD26N03LTM

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
FAIRCHILD

FQD2N100

1000V N-Channel MOSFET
FAIRCHILD

FQD2N100TM

1000V N-Channel MOSFET
FAIRCHILD

FQD2N100TM

功率 MOSFET,N 沟道,QFET®,1000 V,1.6 A,9 Ω,DPAK
ONSEMI

FQD2N30

300V N-Channel MOSFET
FAIRCHILD

FQD2N30TF

暂无描述
FAIRCHILD

FQD2N30TM

Power Field-Effect Transistor, 1.7A I(D), 300V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD