FQD20N06TM [FAIRCHILD]
N-Channel QFET MOSFET; N沟道MOSFET QFET
| 型号： | FQD20N06TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel QFET MOSFET |
| 文件： | 总8页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
FQD20N06
N-Channel QFET MOSFET
®
60 V, 16.8 A, 63 m
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
•
16.8 A, 60 V, RDS(on) = 63 m (Max) @ VGS = 10V,
D = 8.4 A
I
•
•
•
Low Gate Charge (Typ.11.5 nC)
Low Crss (Typ. 25 pF)
100% Avalanche Tested
D
D
G
G
D-PAK
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VDSS
Parameter
FQD20N06
60
Unit
V
Drain-Source Voltage
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
16.8
10.6
67.2
25
A
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
155
mJ
A
16.8
3.8
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
mJ
V/ns
W
7.0
2.5
Power Dissipation (TC = 25°C)
38
W
- Derate above 25°C
Operating and Storage Temperature Range
0.30
-55 to +150
W/°C
°C
TJ, TSTG
TL
Maximum lead temperature for soldering purposes,
300
°C
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
FQD20N06
3.28
Unit
°C/W
°C/W
°C/W
RJC
RJA
RJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
50
110
* When mounted on the minimum pad size recommended (PCB Mount)
1
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©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 A
D = 250 A, Referenced to 25°C
Drain-Source Breakdown Voltage
60
--
--
--
--
V
BVDSS
Breakdown Voltage Temperature
Coefficient
I
0.07
V/°C
/
TJ
IDSS
V
DS = 60 V, VGS = 0 V
DS = 48 V, TC = 125°C
--
--
--
--
--
--
--
--
1
A
A
nA
nA
Zero Gate Voltage Drain Current
V
10
IGSSF
IGSSR
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 A
Gate Threshold Voltage
2.0
--
4.0
V
S
RDS(on)
Static Drain-Source
On-Resistance
--
--
VGS=10V,ID=8.4A
0.050 0.063
gFS
VDS = 25 V, ID = 8.4 A
Forward Transconductance
--
10
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
450
170
25
590
220
35
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
5
45
20
25
11.5
3
20
100
50
60
15
--
ns
ns
VDD = 30 V, ID = 10 A,
RG = 25
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
VDS = 48 V, ID = 20 A,
Qgs
Qgd
VGS = 10 V
4.5
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
16.8
67.2
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 16.8 A
GS = 0 V, IF = 20 A,
dIF / dt = 100 A/s
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
43
50
ns
nC
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 640H, I = 16.8A, V = 25V, R = 25 Starting T = 25°C
AS
DD
G
J
3. I ≤ 20A, di/dt ≤ 300A/s, V
≤ BV Starting T = 25°C
4. Essentially independent of operating temperature
SD
DD
DSS, J
2
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©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
Typical Characteristics
V
Top : 15.0GVS
10.0V
8.0V
7.0V
6.0V
5.5V
Bottom: 5.0 V
101
1
10
100
150℃
25℃
※Notes :
1. VDS = 25V
※Notes :
2. 250μs Pulse Test
1. 250μs Pulse Test
2. T = 25℃
-55℃
0
C
10
-1
10
-1
0
10
1
10
2
4
6
8
10
10
VGS, Gate-SourceVoltage[V]
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
80
60
40
20
0
VGS = 10V
VGS =20V
101
100
※Notes:
1. VGS = 0V
2. 250μs Pulse Test
150℃
25℃
※Note : T = 25℃
J
-1
0
10
20
30
40
50
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
1200
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
gd
VDS = 30V
VDS = 48V
C
800
400
0
oss
※Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
6
4
C
rss
2
※Note : ID = 20A
0
0
2
4
6
8
10
12
-1
0
10
1
10
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
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©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
Typical Characteristics (Continued)
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes:
0.9
1. V = 0 V
2. IDG=S 250 μA
※Notes :
1. V = 10 V
2. IDG=S 8.4 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
103
102
101
100
10-1
20
15
10
5
OperationinThisArea
is Limited by RDS(on)
100 s
1 ms
10 ms
DC
※Notes :
1. TC = 25 o
C
2. T = 150 o
C
J
3. Single Pulse
0
25
10-1
100
101
102
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o t e s
1 . Z θ J C(t )
2 . D u t y Fa c t o r , D =t 1 /t 2
3 . T J M TC P D M Z θ J C(t )
:
=
3 .2 8 ℃ /W M a x.
0 .1
-
=
*
0 .0 5
0 .0 2
1 0 -1
0 .0 1
PDM
s in g le p u ls e
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 - 3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
4
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©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
5
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©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
6
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©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
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7
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
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FQD20N06 Rev. C0
8
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