HGT1S3N60A4DS9A [FAIRCHILD]
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; 600V ,开关电源系列N沟道IGBT与反并联二极管超高速型号: | HGT1S3N60A4DS9A |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
文件: | 总9页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
Features
• >100kHz Operation At 390V, 3A
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors.These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25 C and 150 C. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C
J
• Low Conduction Loss
o
o
• Temperature Compensating SABER™ Model
www.Fairchildsemi.com
Packaging
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.This device has been
optimized for high frequency switch mode power
supplies.
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
Formerly Developmental Type TA49329.
Ordering Information
PART NUMBER
HGT1S3N60A4DS
HGTP3N60A4D
PACKAGE
TO-263AB
TO-220AB
BRAND
3N60A4D
3N60A4D
JEDEC TO-220AB
E
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
G
Symbol
C
COLLECTOR
(FLANGE)
G
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGT1S3N60A4DS
HGTP3N60A4D
UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
17
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
8
C
C110
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
40
20
CM
GES
GEM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
15A at 600V
70
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.58
W/ C
C
o
Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
o
300
260
C
C
L
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
J
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
600
-
-
CES
C
GE
o
I
V
= 600V
T = 25 C
J
-
-
250
3.0
2.7
2.2
7.0
250
-
µA
mA
V
CES
CE
o
T = 125 C
J
-
o
Collector to Emitter Saturation Voltage
V
I
= 3A,
T = 25 C
J
-
2.0
1.6
6.1
-
CE(SAT)
C
V
= 15V
GE
o
T = 125 C
-
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= 600V
4.5
-
V
GE(TH)
C CE
I
V
=
20V
o
nA
A
GES
GE
SSOA
T = 150 C, R = 50Ω, V
= 15V,
15
-
J
G
GE
L = 200µH, V
= 600V
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
= 3A, V
= 300V
CE
-
-
-
-
-
-
-
-
-
-
8.8
21
26
6
-
25
32
-
V
GEP
C
Q
I
= 3A,
V
V
= 15V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
g(ON)
C
GE
V
= 300V
CE
= 20V
o
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C,
J
d(ON)I
I
= 3A,
CE
t
11
73
47
37
55
25
-
rI
d(OFF)I
V
V
R
= 390V,
= 15V,
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
-
= 50Ω,
G
t
-
fI
L = 1mH,
Test Circuit (Figure 24)
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
E
E
E
-
ON1
ON2
OFF
70
35
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
o
Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)
J
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
5.5
12
110
70
37
90
50
2.25
29
19
-
MAX
8
UNITS
ns
o
t
IGBT and Diode at T = 125 C,
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
V
R
= 3A,
CE
t
15
165
100
-
ns
rI
d(OFF)I
= 390V, V
= 15V,
CE
GE
= 50Ω,
L = 1mH,
Test Circuit (Figure 24)
Current Turn-Off Delay Time
Current Fall Time
t
G
ns
t
ns
fI
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
E
E
µJ
ON1
ON2
OFF
100
80
-
µJ
µJ
V
I
I
I
= 3A
V
EC
EC
EC
EC
t
= 3A, dI /dt = 200A/µs
EC
-
ns
rr
= 1A, dI /dt = 200A/µs
EC
-
ns
o
Thermal Resistance Junction To Case
R
IGBT
1.8
3.5
C/W
θJC
o
Diode
-
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 24.
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
CE
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
20
16
12
8
20
16
12
8
V
= 15V
o
GE
T
= 150 C, R = 50Ω, V = 15V, L = 200µH
GE
J
G
4
4
0
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
600
20
18
16
14
12
10
8
64
56
48
40
32
24
16
8
o
T
V
V
= 390V, R = 50Ω, T = 125 C
C
GE
CE
G
J
o
15V
75 C
t
SC
300
200
I
SC
f
f
P
= 0.05 / (t
d(OFF)I
+ t
)
MAX1
d(ON)I
+ E
= (P - P ) / (E
)
MAX2
D
C
ON2
OFF
= CONDUCTION DISSIPATION
100
50
C
(DUTY FACTOR = 50%)
o
R
= 1.8 C/W, SEE NOTES
o
ØJC
6
T
= 125 C, R = 50Ω, L = 1mH, V
= 390V
CE
J
G
4
0
1
2
3
4
5
6
10
11
12
13
14
15
I
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTORTO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
20
16
12
8
20
DUTY CYCLE < 0.5%, V
= 15V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
= 12V
PULSE DURATION = 250µs
GE
GE
o
T
= 150 C
J
16
12
8
o
o
T
= 125 C
T
= 125 C
J
J
o
T
= 150 C
J
4
4
o
o
T
= 25 C
T
= 25 C
J
J
0
0
0
1
2
3
4
5
0
1
2
3
4
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
240
140
R
= 50Ω, L = 1mH, V
= 390V
R
= 50Ω, L = 1mH, V
= 390V
G
CE
G
CE
120
100
80
60
40
20
0
200
160
120
80
o
T
= 125 C, V
= 12V, V
= 15V
J
GE
GE
o
T
= 125 C, V
= 12V OR 15V
J
GE
40
o
= 25 C, V
o
T
= 12V OR 15V
5
T
J
= 25 C, V
= 12V, V
= 15V
GE
J
GE
GE
0
1
2
3
4
5
6
1
2
3
4
6
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
16
12
8
32
28
24
20
16
12
8
R
= 50Ω, L = 1mH, V
= 390V
o
R
= 50Ω, L = 1mH, V
= 390V
G
CE
G
CE
o
T
= 25 C OR T = 125 C, V
= 12V
GE
J
J
o
= 25 C,T = 125 C, V
GE
o
T
= 12V
= 15V
J
J
o
o
T
= 25 C,T = 125 C, V
GE
J
J
4
o
o
T
= 25 C OR T = 125 C, V
= 15V
5
J
J
GE
0
4
1
2
3
4
5
6
1
2
3
4
6
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 10. TURN-ON RISETIME vs COLLECTORTO
EMITTER CURRENT
112
96
R
= 50Ω, L = 1mH, V
= 390V
o
G
CE
V
= 15V,T = 125 C
J
GE
104
96
88
80
72
64
56
48
88
80
72
64
56
48
40
o
o
V
= 12V,T = 125 C
J
T
= 125 C, V = 12V OR 15V
GE
GE
J
o
V
= 15V,T = 25 C
J
GE
o
V
= 12V,T = 25 C
J
GE
o
T
= 25 C, V
= 12V OR 15V
5
J
GE
R
= 50Ω, L = 1mH, V
= 390V
G
CE
1
2
3
4
6
1
2
3
4
5
6
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 12. FALLTIME vs COLLECTORTO EMITTER
CURRENT
16
20
o
I
= 1mA, R = 100Ω, T = 25 C
G(REF)
L
J
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 10V
CE
14
12
10
8
16
12
8
V
= 600V
CE
V
= 400V
CE
V
= 200V
CE
6
o
T
T
= 25 C
J
4
4
o
o
T
= -55 C
= 125 C
J
J
2
0
0
0
4
8
12
Q , GATE CHARGE (nC)
G
16
20
24
28
4
6
8
10
12
14
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
250
1000
R
= 50Ω, L = 1mH, V
= 390V, V = 15V
GE
G
CE
o
T
= 125 C, L = 1mH, V
CE
= 390V, V = 15V
GE
J
E
= E
+ E
TOTAL
ON2 OFF
E
= E
ON2
+ E
OFF
TOTAL
200
150
100
I
= 4.5A
= 3A
CE
I
= 4.5A
= 3A
CE
I
CE
I
CE
100
30
I
= 1.5A
CE
I
= 1.5A
50
CE
50
0
3
10
100
R , GATE RESISTANCE (Ω)
G
1000
25
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
700
2.7
o
DUTY CYCLE < 0.5%,T = 25 C
J
FREQUENCY = 1MHz
PULSE DURATION = 250µs
600
500
400
300
200
100
0
2.6
2.5
2.4
I
= 4.5A
CE
C
C
IES
2.3
2.2
2.1
2.0
I
= 3A
CE
RES
I
= 1.5A
CE
C
OES
0
20
40
60
80
100
8
10
12
14
16
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 17. CAPACITANCE vs COLLECTORTO EMITTER
VOLTAGE
FIGURE 18. COLLECTORTO EMITTER ON-STATEVOLTAGE
vs GATE TO EMITTER VOLTAGE
20
64
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
dI /dt = 200A/µs
EC
o
125 C t
56
48
40
32
24
16
8
rr
16
o
125 C t
b
12
8
o
25 C t
rr
o
125 C t
a
o
o
125 C
25 C
4
0
o
25 C t
o
a
25 C t
b
0
0
1
2
3
4
5
1
2
3
4
5
6
V
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
EC
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
26
22
18
14
200
160
120
80
I
= 3A, V = 390V
CE
V
= 390V
EC
CE
o
o
125 C, I
= 3A
EC
125 C t
a
o
125 C, I
= 1.5A
o
EC
125 C t
b
o
25 C t
a
o
25 C, I
o
= 20A
= 10A
EC
25 C, I
EC
10
6
40
0
o
25 C t
b
200
400
600
800
1000
200
400
600
800
1000
di /dt, RATE OF CHANGE OF CURRENT (A/µs)
di /dt, RATE OF CHANGE OF CURRENT (A/µs)
EC
EC
FIGURE 21. RECOVERYTIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
0
10
0.5
0.2
0.1
-1
10
10
t
1
0.05
P
D
0.02
0.01
t
2
DUTY FACTOR, D = t / t
PEAK T = (P X Z
1
2
-2
X R ) + T
J
D
θJC
θJC C
SINGLE PULSE
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
V
GE
HGTP3N60A4D
DIODE TA49369
90%
10%
E
0N2
E
L = 1mH
OFF
I
I
CE
CE
R
= 50Ω
G
90%
10%
DUT
V
CE
+
t
V
= 390V
d(ON)I
DD
-
t
fI
t
rI
t
d(OFF)I
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t are defined in Figure 25.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ).The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must not
.
D
D
JM
C
θJC
4. Devices should never be inserted into or removed from
circuits with power on.
exceed P . A 50% duty factor was used (Figure 3) and the
D
5. GateVoltage Rating - Never exceed the gate-voltage
conduction losses (P ) are approximated by:
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V x I )/2.
CE CE
C
permanent damage to the oxide layer in the gate region.
E
and E
OFF
are defined in the switching waveforms
6. GateTermination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON2
shown in Figure 25. E
power loss (I
CE
integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
is the integral of the instantaneous
ON2
x V ) during turn-on and E is the
CE OFF
x V ) during
CE
CE
E
; i.e., the collector current equals zero (I = 0).
OFF CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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The datasheet is printed for reference information only.
Rev. H4
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