MCT5211TVM_技术文档

September 2009

MCT5201M, MCT5210M, MCT5211M

Low Input Current Phototransistor Optocouplers

Features

Description

■ High CTR

comparable to Darlingtons

The MCT52XXM series consists of a high-efficiency

AlGaAs, infrared emitting diode, coupled with an NPN

phototransistor in a six pin dual-in-line package.

CE(SAT)

■ CTR guaranteed 0°C to 70°C

■ High common mode transient rejection 5kV/µs

■ Data rates up to 150kbits/s (NRZ)

The MCT52XXM is well suited for CMOS to LSTT/TTL

interfaces, offering 250% CTR

with 1mA of LED

■ Underwriters Laboratory (UL) recognized,

CE(SAT)

input current. When an LED input current of 1.6mA is

supplied data rates to 20K bits/s are possible.

file #E90700, volume 2

■ IEC60747-5-2 approved (ordering option V)

The MCT52XXM can easily interface LSTTL to LSTTL/

TTL, and with use of an external base to emitter resistor

data rates of 100K bits/s can be achieved.

Applications

■ CMOS to CMOS/LSTTL logic isolation

■ LSTTL to CMOS/LSTTL logic isolation

■ RS-232 line receiver

■ Telephone ring detector

■ AC line voltage sensing

■ Switching power supply

Schematic

Package Outlines

1

2

6

BASE

ANODE

CATHODE

5 COL

3

4 EMITTER

www.fairchildsemi.com

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameters

Value

Units

TOTAL DEVICE

T

Storage Temperature

Operating Temperature

Lead Solder Temperature

-55 to +150

-40 to +100

260 for 10 sec

260

°C

STG

T

OPR

T

°C

SOL

P

Total Device Power Dissipation @ 25°C (LED plus detector)

Derate Linearly From 25°C

mW

mW/°C

D

3.5

EMITTER

I

Continuous Forward Current

Reverse Input Voltage

50

6

mA

V

F

V

R

I (pk)

Forward Current - Peak (1 µs pulse, 300 pps)

LED Power Dissipation

3.0

75

1.0

A

F

P

mW

mW/°C

D

Derate Linearly From 25°C

DETECTOR

I

Continuous Collector Current

Detector Power Dissipation

Derate Linearly from 25°C

150

2.0

mA

mW

C

P

D

mW/°C

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

2

Electrical Characteristics ^{(T = 25°C unless otherwise speciﬁed)}

A

Individual Component Characteristics

Symbol

EMITTER

Parameters

Test Conditions

Device Min. Typ.* Max. Units

V

Input Forward Voltage

I = 5mA

All

1.25

1.5

V

F

∆V

Forward Voltage Temp. Coefﬁcient

I = 2mA

-1.75

mV/°C

F

∆T

A

V

Reverse Voltage

I = 10µA

All

6

V

R

C

Junction Capacitance

V = 0V, f = 1.0MHz

18

pF

J

F

DETECTOR

BV

Collector-Emitter Breakdown Voltage I = 1.0mA, I = 0

All

30

5

100

120

10

V

CEO

CBO

EBO

C

F

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Dark Current

I = 10µA, I = 0

C F

I = 10µA, I = 0

V

E

F

I

V

= 10V, I = 0,

1

100

nA

CER

CE

F

R

= 1MΩ

BE

CE

CB

EB

C

Capacitance, Collector to Emitter

Capacitance, Collector to Base

Capacitance, Emitter to Base

V

= 0, f = 1MHz

All

10

80

15

pF

CE

CB

EB

Isolation Characteristics

Symbol

Characteristic

Test Conditions

Device

Min. Typ.* Max.

Units

V

Input-Output Isolation

Voltage

f = 60Hz, t = 1 sec.

All

7500

Vac(peak)

ISO

(10)

11

R

C

Isolation Resistance

Isolation Capacitance

V

= 500 VDC, T = 25°C

All

10

Ω

pF

ISO

I-O

CM

A

(9)

= 0, f = 1 MHz

0.4

0.6

CM

Common Mode Transient

Rejection – Output HIGH

Common Mode Transient

Rejection – Output LOW

= 50 V

, R = 750Ω, MCT5210M/11M

5000

V/µs

H

P-P1

L

I = 0

F

V

= 50 V , R = 1KΩ,

MCT5201M

CM

P-P

L

I = 0

F

CM

V

= 50 V

, R = 750Ω, MCT5210M/11M

5000

V/µs

L

CM

P-P1

L

I =1.6mA

F

V

= 50 V

, R = 1KΩ,

MCT5201M

CM

L

I = 5mA

F

*All typical T = 25°C

A

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

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3

Electrical Characteristics ^{(Continued) (T = 25°C unless otherwise speciﬁed)}

A

Transfer Characteristics

Symbol

Characteristics

Test Conditions

Device

Min. Typ.* Max. Units

DC CHARACTERISTICS

CTR

Saturated Current

Transfer Ratio

(Collector to Emitter)

I = 5mA, V = 0.4V

MCT5201M 120

MCT5210M 60

%

CE(SAT)

F

CE

(1)

I = 3.0mA, V = 0.4V

F

CE

I = 1.6mA, V = 0.4V

MCT5211M 100

75

F

CE

I = 1.0mA, V = 0.4V

F

CE

CTR

Current Transfer Ratio I = 3.0mA, V = 5.0V

MCT5210M

70

%

(CE)

(CB)

F

CE

(1)

(Collector to Emitter)

I = 1.6mA, V = 5.0V

MCT5211M 150

110

F

CE

I = 1.0mA, V = 5.0V

F

CE

CTR

Current Transfer Ratio I = 5mA, V = 4.3V

MCT5201M 0.28

F

CB

(2)

Collector to Base

I = 3.0mA, V = 4.3V

MCT5210M

MCT5211M

0.2

0.3

F

CE

I = 1.6mA, V = 4.3V

F

CE

I = 1.0mA, V = 4.3V

0.25

F

CE

V

Saturation Voltage

I = 5mA, I = 6mA

MCT5201M

MCT5210M

MCT5211M

0.4

V

CE(SAT)

F

CE

I = 3.0mA, I = 1.8mA

F

CE

I = 1.6mA, I = 1.6mA

F

CE

AC CHARACTERISTICS

T

Propagation Delay

HIGH-to-LOW

R = 330 Ω, R = ∞

I = 3.0mA, MCT5210M

10

7

µs

PHL

L

BE

F

(3)

V

= 5.0V

CC

R = 3.3 kΩ, R = 39kΩ

L

BE

R = 750 Ω, R = ∞

I = 1.6mA, MCT5211M

14

15

17

24

3

L

BE

F

V

= 5.0V

CC

R = 4.7 kΩ, R = 91kΩ

L

BE

R = 1.5 kΩ, R = ∞

I = 1.0mA,

F

L

BE

V

= 5.0V

CC

R = 10 kΩ, R = 160kΩ

L

BE

V

= 0.4V, V = 5V,

I = 5mA

MCT5201M

30

CE

CC

F

R = ﬁg. 13, R = 330kΩ

L

BE

T

Propagation Delay

LOW-to-HIGH

R = 330 Ω, R = ∞

I = 3.0mA, MCT5210M

0.4

8

µs

PLH

L

BE

F

(4)

V

= 5.0V

CC

R = 3.3 kΩ, R = 39kΩ

L

BE

R = 750 Ω, R = ∞

I = 1.6mA, MCT5211M

2.5

11

7

L

BE

F

V

= 5.0V

CC

R = 4.7 kΩ, R = 91kΩ

L

BE

R = 1.5 kΩ, R = ∞

I = 1.0mA,

F

L

BE

V

= 5.0V

CC

R = 10 kΩ, R = 160kΩ

16

12

L

BE

V

= 0.4V, V = 5V,

I = 5mA

MCT5201M

13

15

20

13

30

CE

CC

F

R = ﬁg. 13, R = 330kΩ

L

BE

(5)

t

Delay Time

V

= 0.4V, R = 330kΩ, I = 5mA

1.1

2.5

10

µs

d

CE

BE

F

R = 1 kΩ, V = 5V

L

CC

(6)

t

Rise Time

V

= 0.4V, R = 330kΩ, I = 5mA

CE BE F

r

R = 1 kΩ, V = 5V

L

CC

(7)

Storage Time

V

= 0.4V, R = 330 kΩ, I = 5mA

CE BE F

s

R = 1 kΩ, V = 5V

L

CC

(8)

t

Fall Time

V

= 0.4V, R = 330 kΩ, I = 5mA

16

f

CE

BE

F

R = 1 kΩ, V = 5V

L

CC

*All typicals at T = 25°C

A

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

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4

Notes:

1. DC Current Transfer Ratio (CTR ) is deﬁned as the transistor collector current (I ) divided by the input LED

CE

current (I ) x 100%, at a speciﬁed voltage between the collector and emitter (V ).

F

CE

2. The collector base Current Transfer Ratio (CTR ) is deﬁned as the transistor collector base photocurrent(I

)

CB

divided by the input LED current (I ) time 100%.

F

3. Referring to Figure 14 the T

propagation delay is measured from the 50% point of the rising edge of the data

PHL

input pulse to the 1.3V point on the falling edge of the output pulse.

4. Referring to Figure 14 the T propagation delay is measured from the 50% point of the falling edge of data input

PLH

pulse to the 1.3V point on the rising edge of the output pulse.

5. Delay time (t ) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.

d

6. Rise time (t ) is measured from 90% to 10% of Vo falling edge.

r

7. Storage time (t ) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.

s

8. Fall time (t ) is measured from 10% to 90% of Vo rising edge.

f

9. C

is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).

ISO

10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted

together.

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

5

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Installation Classiﬁcations per DIN VDE 0110/1.89

Table 1

For Rated Main Voltage < 150Vrms

For Rated Main voltage < 300Vrms

Climatic Classiﬁcation

I-IV

55/100/21

2

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

CTI

175

V

Input to Output Test Voltage, Method b,

1594

V

PR

peak

V

x 1.875 = V , 100% Production Test

IORM

PR

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

1275

peak

V

x 1.5 = V , Type and Sample Test

PR

IORM

with tm = 60 sec, Partial Discharge < 5pC

Max. Working Insulation Voltage

Highest Allowable Over Voltage

External Creepage

V

850

6000

7

V

IORM

peak

V

IOTM

peak

mm

Ω

External Clearance

7

Insulation Thickness

0.5

9

RIO

Insulation Resistance at Ts, V = 500V

10

IO

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

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6

Typical Performance Curves

Fig. 2 Normalized Current Transfer Ratio vs.

Forward Current

Fig. 1 LED Forward Voltage vs. Forward Current

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

2.0

1.8

1.6

1.4

T

A

= -40°C

1.2

1.0

0.8

T

A

= 25°C

Normalized to:

I

V

= 5mA

= 5V

F

CE

T

A

= 100°C

T

= 25°C

A

0.1

1

10

100

0.1

1

10

I – FORWARD CURRENT (mA)

F

I

F

– LED FORWARD CURRENT (mA)

Fig. 4 Normalized Collector vs.

Collector-Emitter Voltage

Fig. 3 Normalized CTR vs.Temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

10

1

Normalized to:

I

V

= 5mA

= 5V

F

CE

I

= 10mA

F

I

F

= 5mA

= 2mA

I

F

= 10mA

I

F

= 5mA

T

= 25°C

A

I

= 2mA

= 1mA

F

0.1

I

F

I

F

I

= 0.5mA

F

0.01

0.001

0.0001

I

= 1mA

I

= 0.2mA

F

= 0.5mA

Normalized to:

= 5mA

I

F

I

= 0.2mA

F

V

= 5V

CE

T

= 25°C

A

-40

-20

100 120

– AMBIENT TEMPERATURE (°C)

-20

0

20

40

60

0.1

1

10

T

V

CE

– COLLECTOR-EMITTER VOLTAGE (V)

A

Fig. 5 Normalized Collector Base Photocurrent

Ratio vs. Forward Current

Fig. 6 Normalized Collector-Base Current

vs.Temperature

100

10

1

I

= 10mA

= 5mA

F

I

F

10

1

I

F

= 2mA

0.1

I

F

= 1mA

I

= 0.5mA

= 0.2mA

F

Normalized to:

= 5mA

0.1

0.01

Normalized to:

= 5mA

I

F

I

F

I

F

V

= 4.3V

CB

V

= 4.3V

CB

T

A

= 25°C

T

= 25°C

A

0.01

0.001

-60 -40

-20

0

20

40

60

80 100

0.1

1

10

100

T

A

– AMBIENT TEMPERATURE (°C)

I

– FORWARD CURRENT (mA)

F

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

7

Typical Performance Curves (Continued)

Fig. 7 Collector-Emitter Dark Current vs.

Fig. 8 Switching Time vs.

Ambient Temperature

30

25

20

15

10

5

10000

I

V

= 0mA

Refer to Figure 13 for switching time circuit

I

= 10mA

= 5V

F

CC

= 10V

V

R

CE

= 1kΩ

L

1000

100

10

= 330kΩ

BE

t

f

t

PLH

t

s

1

t

d

t

r

PHL

0

-40

0.1

-20

0

20

40

60

80

100 120

0

10 20 30 40 50 60 70 80 90 100

T

– AMBIENT TEMPERATURE (°C)

T

– AMBIENT TEMPERATURE (°C)

A

Fig. 10 Switching Time vs.

Ambient Temperature

Fig. 9 Switching Time vs.

Ambient Temperature

30

25

20

15

10

5

20

16

12

8

I

V

R

= 10mA

I = 5mA

F

Refer to Figure 13 for switching time circuit

F

Refer to Figure 13 for switching time circuit

= 5V

V

= 5V

CC

= 1kΩ

R

= 1kΩ

BE

L

= 100kΩ

= 330kΩ

BE

t

f

t

f

t

PLH

t

s

t

s

4

t

PHL

r

t

r

t

d

t

d

PHL

0

-40

0

-40

-20

0

20

40

60

80

100

120

-20

0

20

40

60

80

100 120

T

A

– AMBIENT TEMPERATURE (°C)

T

– AMBIENT TEMPERATURE (°C)

A

Fig. 11 Switching Time vs.

Ambient Temperature

Fig. 12 Switching Time vs.

Base-Emitter Resistance

20

100

10

1

I

V

R

= 5mA

F

Refer to Figure 13 for switching time circuit

t

I

R

PLH

= 5V

CC

= 1.6mA

F

t

, I = 1mA, R = 10kΩ

PLH

F

L

= 1kΩ

L

16

12

8

= 4.7kΩ

L

= 100kΩ

BE

t

I

R

PLH

= 3mA

F

= 3.3kΩ

L

t

f

t

, I = 1mA, R = 10kΩ

PHL

F

L

t

PLH

t

, I = 1.6mA, R = 4.7kΩ

F L

PHL

t

s

t

, I = 3mA, R = 3.3kΩ

PHL

F

L

4

V

T

= 5V

CC

t

r

PHL

= 25°C

A

t

d

0

-40

10

100

1000

10000

-20

0

20

40

60

80

100 120

T

A

– AMBIENT TEMPERATURE (°C)

R

BE

– BASE-EMITTER RESISTANCE (kΩ)

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

8

Typical Electro-Optical Characteristics (T = 25°C unless otherwise specified)

A

V_CC= 5.0 V

Pulse Gen

Z_O= 50Ω

f = 10KHz

10% D.F.

Pulse Gen

Z_O= 50Ω

f = 10KHz

10% D.F.

1K

V_O

4.7K

V_O

D2

D3

D4

D1

I_Fmonitor

330K

100 Ω

t_r, t_f, t_d, t_s

TEST CIRCUIT

t

_PHL, t_PLH

TEST CIRCUIT

Figure 13.

INPUT

(I_F)

50%

t_d

0

90%

t_PHL

90%

OUTPUT

(V_O)

t_PLH

1.3 V

10%

0

t_r

t_s

t_f

Figure 14. Switching Circuit Waveforms

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

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9

Package Dimensions

Through Hole

0.4" Lead Spacing

8.13–8.89

6

4

8.13–8.89

6

4

6.10–6.60

Pin 1

1

3

Pin 1

1

3

5.08 (Max.)

3.28–3.53

0.25–0.36

7.62 (Typ.)

5.08 (Max.)

3.28–3.53

0.25–0.36

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.20–0.30

(0.86)

15° (Typ.)

(0.86)

0.41–0.51

0.76–1.14

0.20–0.30

10.16–10.80

1.02–1.78

0.41–0.51

0.76–1.14

1.02–1.78

Surface Mount

(1.78)

8.13–8.89

6

4

(1.52)

(2.54)

(7.49)

6.10–6.60

8.43–9.90

(10.54)

1

3

(0.76)

Pin 1

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.20–0.30

0.38 (Min.)

0.16–0.88

(8.13)

2.54 (Bsc)

(0.86)

0.41–0.51

0.76–1.14

1.02–1.78

Note:

All dimensions in mm.

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

10

Ordering Information

Order Entry Identiﬁer

Option

(Example)

Description

Standard Through Hole Device (50 units per tube)

Surface Mount Lead Bend

No sufﬁx

MCT5201M

S

SR2

T

MCT5201SM

MCT5201SR2M

MCT5201TM

MCT5201VM

MCT5201TVM

MCT5201SVM

MCT5201SR2VM

Surface Mount; Tape and Reel (1,000 units per reel)

0.4" Lead Spacing

V

IEC60747-5-2

TV

IEC60747-5-2, 0.4" Lead Spacing

IEC60747-5-2, Surface Mount

SV

SR2V

IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)

Marking Information

1

2

MCT5201

6

V X YY Q

5

3

4

Deﬁnitions

1

2

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

3

4

5

6

One digit year code, e.g., ‘7’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

*Note – Parts that do not have the ‘V’ option (see deﬁnition 3 above) that are marked with

date code ‘325’ or earlier are marked in portrait format.

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

11

Carrier Tape Specification

12.0 ± 0.1

2.0 ± 0.05

4.5 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

0.30 ± 0.05

4.0 ± 0.1

11.5 ± 1.0

24.0 ± 0.3

9.1 ± 0.20

21.0 ± 0.1

Ø1.5 ± 0.1/-0

10.1 ± 0.20

0.1 MAX

User Direction of Feed

Reflow Profile

300

280

260

240

220

200

180

160

140

120

100

80

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

°C

1.822°C/Sec Ramp up rate

60

40

33 Sec

20

0

60

120

180

270

360

Time (s)

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

12

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

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PowerXS™

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Build it Now™

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CROSSVOLT™

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Current Transfer Logic™

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EfficentMax™

EZSWITCH™*

™*

F-PFS™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Programmable Active Droop™

QFET^®

TinyBoost™

TinyBuck™

QS™

Quiet Series™

RapidConfigure™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

SMART START™

SPM^®

®

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

UHC^®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

OPTOPLANAR^®

FAST^®

®

FastvCore™

FETBench™

PDP SPM™

Power-SPM™

Sync-Lock™

FlashWriter^®

®

*

FPS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide

any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Advance Information

Preliminary

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

First Production

Full Production

Not In Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

No Identification Needed

Obsolete

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I40

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

www.fairchildsemi.com

13


型号：	MCT5211TVM
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Transistor Output Optocoupler, 1-Element, 7500V Isolation, DIP-6 输出元件光电
文件：	总13页 (文件大小：303K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCT5211TVM [FAIRCHILD]

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MCT6-X001

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