RMPA29200_技术文档

June 2004

RMPA29200

29–31 GHZ 2 Watt Power Amplifier MMIC

General Description

Features

The Fairchild Semiconductor’s RMPA29200 is a high

efficiency power amplifier designed for use in point to point

and point to multi-point radios, and various communi-

cations applications. The RMPA29200 is a 3-stage GaAs

MMIC amplifier utilizing our advanced 0.15µm gate length

Power PHEMT process and can be used in conjunction

with other driver or power amplifiers to achieve the required

total power output.

• 17dB small signal gain (typ.)

• 33dBm saturated power out (typ.)

• DC Bias connections on top or bottom side

• Circuit contains individual source vias

• Chip size 4.00mm x 2.98mm

Device

Absolute Ratings

Symbol

Parameter

Positive DC Voltage (+5V Typical)

Negative DC Voltage

Ratings

+6

Units

V

Vd

Vg

-2

V

Vdg

Simultaneous (Vd–Vg)

+8

V

I

Positive DC Current

2450

mA

dBm

°C

D

P

RF Input Power (from 50Ω source)

Operating Baseplate Temperature

Storage Temperature Range

Thermal Resistance (Channel to Backside)

+22

IN

T

-30 to +85

-55 to +125

5.6

C

°C

STG

R

°C/W

JC

RMPA29200 Rev. D

Electrical Characteristics ^{(At 25°C), 50Ω system, Vd = +5V, Quiescent current (Idq) = 1500mA}

Parameter

Min

Typ

Max

Units

GHz

V

Frequency Range

29

31

1

Gate Supply Voltage (Vg)

-0.2

17

Gain Small Signal (Pin = 0dBm)

Gain Variation vs. Frequency

14.5

32

dB

±0.5

32.5

33

dB

Power Output at 1dBm Compression

Power Output Saturated: (Pin = +19dBm)

Drain Current at Pin = 0dBm

dBm

mA

%

1500

1780

20

Drain Current at P1dB Compression

Power Added Efﬁciency (PAE): at P1dB

OIP3 (26dBm/Tone)

38

dBm

dB

Input Return Loss (Pin = 0dBm)

Output Return Loss (Pin = 0dBm)

12

10

dB

Note:

1. Typical range of negative gate voltages is -1.0 to 0.0V to set typical Idq of 1500 mA.

RMPA29200 Rev. D

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal

conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with

gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen

environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of

bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of

wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges

through the device.

Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for

appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2mil gap

between the chip and the substrate material.

GATE SUPPLY

(Vg)

MMIC CHIP

RF IN

RF OUT

GROUND

(Back of the Chip)

DRAIN SUPPLY

(Vd)

Figure 1. Functional Block Diagram

2.997

2.812

2.714

1.692

1.492

1.292

0.270

0.172

0.0

3.891

4.000

0.0

0.454

1.422

2.513

Dimensions in mm

Figure 2. Chip Layout and Bond Pad Locations

(Chip Size is 4.000mm x 2.997mm x 50µm. Back of chip is RF and DC Ground)

RMPA29200 Rev. D

GATE SUPPLY

(-Vg)

0.1µF

100pF

BOND WIRE Ls

MMIC CHIP

RF IN

RF OUT

100pF

GROUND

(Back of Chip)

BOND WIRE Ls

0.01µF

DRAIN SUPPLY

(Vd = +5V)

Figure 3. Recommended Application Schematic and Circuit Diagram

RMPA29200 Rev. D

DIE-ATTACH

80Au/20Sn

2 MIL GAP

5 MIL THICK

ALUMINA

50Ω

5 MIL THICK

ALUMINA

50Ω

RF OUTPUT

RF INPUT

100pF

L < 0.015"

(4 Places)

0.01µF

Vg (NEGATIVE)

Vd (POSITIVE)

MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side.

Note:

Use 0.003" by 0.0005" gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long

with stress relief.

Figure 4. Recommended Assembly and Bonding Diagram

RMPA29200 Rev. D

Recommended Procedure for Biasing and Operation

CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE

DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq = 1500mA.

Step 5: After the bias condition is established, the RF input

signal may now be applied at the appropriate frequency

band.

The following sequence of steps must be followed to

properly test the amplifier.

Step 1: Turn off RF input power.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

Step 2: Connect the DC supply grounds to the ground of

the chip carrier. Slowly apply negative gate bias supply

voltage of -1.5V to Vg.

Step 3: Slowly apply positive drain bias supply voltage of

+5V to Vd.

RMPA29200 Rev. D

Typical Characteristics

RMPA29200 S21, S22 Mag vs. Frequency

Bias Vd = 5V, Idq = 1500mA, T = 25°C

25

20

15

10

5

S21

S22

0

-5

S11

0

5

0

20

22

24

26

28

30

32

34

36

FREQUENCY (GHz)

RMPA29200 P1dB vs. Frequency vs. Temperature

Vd = 5V, Idq = 1500mA

34

33

32

31

30

29

28

-30°C

+25°C

+85°C

26

27

28

29

30

31

32

FREQUENCY (GHz)

RMPA29200 Power Out vs. Power In

Vd = 5V, Idq = 1500mA, T = 25°C

36

34

32

30

28

26

24

22

20

18

29 GHz

30 GHz

31 GHz

28 GHz

-2

0

2

4

6

8

10

12

14

16

18

POWER IN (dBm)

RMPA29200 Rev. D

Typical Characteristics (Continued)

RMPA29200 Gain vs. Power In

Vd = 5V, Idq = 1500mA, T = 25°C

21

31 GHz

30 GHz

29 GHz

20

19

18

17

16

15

14

28 GHz

-2

0

2

4

6

8

10

12

14

16

18

POWER IN (dBm)

RMPA29200 Two-Tone OIP3 vs. Output Power/Tone

Vd = 5V, Idq = 1500mA, T = 25°C

42

40

38

36

34

32

30

28

30 GHz

29 GHz

31 GHz

10

12

14

16

18

20

22

24

26

28

30

OUTPUT POWER/TONE (dBm)

RMPA29200 in Balance Pair Configuation with MMIC Driver

RMDA29000

POWER AMP (2)

RMDA29000

DRIVER AMP

RF IN

2.4mm

RF OUT

WG

RMPA29200 Rev. D

Typical Characteristics (Continued)

RMPA29200 Balanced Pair with RMDA29000 Driver Power Out vs. Power In

T = 25°C

38

36

34

32

30

28

26

24

22

20

28 GHz

29 GHz

31 GHz

30 GHz

29 GHz

Vd = 5V

RMPA29200 Idq = 1560mA

RMDA29000 Idq = 250mA

-16

-14

-12

-10

-8

-6

-4

-2

0

2

4

6

POWER IN (dBm)

RMPA29200 Balanced Pair with RMDA29000 Drive Amp

P1dB vs. Frequency T = 25°C

35

34.5

34

33.5

33

32.5

32

Vd = 5V

RMPA29200 Idq = 1560mA

RMDA29000 Idq = 250mA

31.5

26

27

28

29

30

31

32

FREQUENCY (GHz)

RMPA29200 Balanced Pair with RMDA29000 Driver Amp

OIP3 vs. Pout F = 29GHz. T = 25°C

41

40

39

38

37

36

OIP3U

OIP3L

Vd = 5V

RMPA29200 Idq = 1560mA

RMDA29000 Idq = 250mA

28

29

30

31

32

33

34

35

POWER OUT (dBm)

RMPA29200 Rev. D

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I11


型号：	RMPA29200
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	29-31 GHZ 2 Watt Power Amplifier MMIC 29-31 GHZ 2瓦功率放大器MMIC 放大器功率放大器
文件：	总10页 (文件大小：257K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RMPA29200 [FAIRCHILD]

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