SI4412DYS62Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;型号: | SI4412DYS62Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 光电二极管 晶体管 |
文件: | 总3页 (文件大小:267K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
June 1999
Si4412DY*
â
Single N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
7 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V
RDS(ON) = 0.042 Ω @ VGS = 4.5 V
Low gate charge.
Fast switching speed.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
High performance trench technology for extremely
low RDS(ON)
.
Applications
High power and current handling capability.
Battery switch
Load switch
Motor controls
'
'
'
'
*
6
6
62ꢀꢁ
6
$EVROXWHꢀ0D[LPXPꢀ5DWLQJVꢀꢀ
6\PERO
3DUDPHWHU
5DWLQJV
8QLWV
±
°
7KHUPDOꢀ&KDUDFWHULVWLFV
θ
°
°
θ
3DFNDJHꢀ2XWOLQHVꢀDQGꢀ2UGHULQJꢀ,QIRUPDWLRQ
'HYLFHꢀ0DUNLQJ
'HYLFH
5HHOꢀ6L]H
7DSHꢀ:LGWK
4XDQWLW\
ꢀꢀꢀꢀꢁꢀ
ꢂ
1999 Fairchild Semiconductor Corporation
Si4412DY Rev. A
(OHFWULFDOꢀ&KDUDFWHULVWLFVꢀꢀꢀꢀꢀꢀ
6\PERO
3DUDPHWHU
7HVWꢀ&RQGLWLRQV
0LQ
7\S 0D[ 8QLWV
2IIꢀ&KDUDFWHULVWLFV
µ
∆
∆
µ
°
°
µ
°
ꢀꢀꢀ
2Qꢀ&KDUDFWHULVWLFV
µ
∆
∆
µ
°
°
Ω
°
'\QDPLFꢀ&KDUDFWHULVWLFV
6ZLWFKLQJꢀ&KDUDFWHULVWLFVꢀ
ꢀꢀ
Ω
Ω
µ
'UDLQꢁ6RXUFHꢀ'LRGHꢀ&KDUDFWHULVWLFVꢀDQGꢀ0D[LPXPꢀ5DWLQJV
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
c) 125°C/W on a minimum
mounting pad.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105°C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4412DY Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
相关型号:
SI4413ADY-T1-E3
Small Signal Field-Effect Transistor, 10.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
VISHAY
SI4413ADY-T1-GE3
Small Signal Field-Effect Transistor, 10.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
SI4413DY-T1
Power Field-Effect Transistor, 9A I(D), 30V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
VISHAY
SI4416DY
Power Field-Effect Transistor, 9A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
TEMIC
SI4416DY/T3
TRANSISTOR 9 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明