SI4412DYS62Z [FAIRCHILD]

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
SI4412DYS62Z
型号: SI4412DYS62Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

开关 光电二极管 晶体管
文件: 总3页 (文件大小:267K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
June 1999  
Si4412DY*  
â
Single N-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench process  
that has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
• 7 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V  
RDS(ON) = 0.042 @ VGS = 4.5 V  
• Low gate charge.  
• Fast switching speed.  
This device is well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
• High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
• High power and current handling capability.  
• Battery switch  
• Load switch  
• Motor controls  
'
'
'
'
*
6
6
62ꢀꢁ  
6
$EVROXWHꢀ0D[LPXPꢀ5DWLQJVꢀꢀ  
6\PERO  
3DUDPHWHU  
5DWLQJV  
8QLWV  
±
°
7KHUPDOꢀ&KDUDFWHULVWLFV  
θ
°
°
θ
3DFNDJHꢀ2XWOLQHVꢀDQGꢀ2UGHULQJꢀ,QIRUPDWLRQ  
'HYLFHꢀ0DUNLQJ  
'HYLFH  
5HHOꢀ6L]H  
7DSHꢀ:LGWK  
4XDQWLW\  
ꢀꢀꢀꢀꢁꢀ  
1999 Fairchild Semiconductor Corporation  
Si4412DY Rev. A  
(OHFWULFDOꢀ&KDUDFWHULVWLFVꢀꢀꢀꢀꢀꢀ  
6\PERO  
3DUDPHWHU  
7HVWꢀ&RQGLWLRQV  
0LQ  
7\S 0D[ 8QLWV  
2IIꢀ&KDUDFWHULVWLFV  
µ
µ
°
°
µ
°
ꢀꢀꢀ  
2Qꢀ&KDUDFWHULVWLFV  
µ
µ
°
°
°
'\QDPLFꢀ&KDUDFWHULVWLFV  
6ZLWFKLQJꢀ&KDUDFWHULVWLFVꢀ  
ꢀꢀ  
µ
'UDLQꢁ6RXUFHꢀ'LRGHꢀ&KDUDFWHULVWLFVꢀDQGꢀ0D[LPXPꢀ5DWLQJV  
Notes:  
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the  
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.  
c) 125°C/W on a minimum  
mounting pad.  
a) 50° C/W when  
mounted on a 1 in2  
pad of 2 oz. copper.  
b) 105°C/W when  
mounted on a 0.04 in2  
pad of 2 oz. copper.  
Scale 1 : 1 on letter size paper  
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
Si4412DY Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  

相关型号:

SI4413ADY-T1-E3

Small Signal Field-Effect Transistor, 10.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
VISHAY

SI4413ADY-T1-GE3

Small Signal Field-Effect Transistor, 10.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY

SI4413ADY_RC

R-C Thermal Model Parameters
VISHAY

SI4413DY

P-Channel 30-V (D-S) MOSFET
VISHAY

SI4413DY-T1

Power Field-Effect Transistor, 9A I(D), 30V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
VISHAY

SI4416DY

N-channel enhancement mode field-effect transistor
NXP

SI4416DY

Single N-Channel MOSFET
FAIRCHILD

SI4416DY

N-Channel 30-V (D-S) MOSFET
VISHAY

SI4416DY

Power Field-Effect Transistor, 9A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
TEMIC

SI4416DY-E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

SI4416DY-T1

N-Channel 30-V (D-S) MOSFET
VISHAY

SI4416DY/T3

TRANSISTOR 9 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal
NXP