SI4884DYL86Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | SI4884DYL86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2001
Si4884DY
Single N-Channel Logic Level PWM Optimized PowerTrenchâ MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
11.5 A, 30 V. RDS(ON) = 0.010 W @ VGS = 10 V
RDS(ON) = 0.015 W @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
Very fast switching.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Low gate charge (typical Qg = 19 nC).
SuperSOTTM-6
SO-8
SOT-223
SuperSOTTM-8
SOIC-16
SOT-23
D
D
5
6
4
3
2
1
D
D
G
S
7
8
1
S
pin
SO-8
S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol
VDSS
VGSS
ID
Parameter
Si4884DY
Units
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
30
±20
V
(Note 1a)
(Note 1a)
11.5
50
A
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
50
25
°C/W
°C/W
(Note 1)
Si4884DY Rev.A
© 2001 Fairchild Semiconductor International
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
30
V
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
23
mV/ oC
DBVDSS/DTJ
IDSS
VDS = 24 V, VGS = 0 V
1
µA
µA
nA
nA
TJ = 55°C
10
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
1
1.7
-5
3
V
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
mV/oC
DVGS(th)/DTJ
RDS(ON)
VGS = 10 V, ID = 11.5 A
0.0085
0.014
0.01
W
TJ =125°C
0.017
VGS = 4.5 V, ID = 9.5 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, ID = 11.5 A
0.0125 0.015
ID(ON)
gFS
On-State Drain Current
50
A
S
Forward Transconductance
40
DYNAMIC CHARACTERISTICS
C
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
2070
510
pF
pF
pF
iss
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
235
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
VDS= 15 V, I D = 1 A
13
10
21
18
ns
ns
VGS = 10 V , RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
36
13
19
7
58
23
27
ns
ns
Qg
Qgs
Qgd
VDS = 15 V, ID = 11.5 A,
VGS = 5 V
nC
nC
nC
6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
2.1
1.2
A
V
VSD
VGS = 0 V, IS = 2.1 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
a. 50OC/W on a 1 in2 pad
of 2oz copper.
b. 105OC/W on a 0.04 in2
pad of 2oz copper.
c. 125OC/W on a 0.006 in2 pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Si4884DY Rev.A
Typical Electrical Characteristics
3
2.5
2
50
VGS= 10V
4.5
4.0
6.0
5.0
VGS = 3.5V
40
30
20
10
0
4.0
3.5
4.5
1.5
1
5.0
6.0
10
3.0
2
0.5
0
0.5
1
1.5
2.5
0
10
20
30
40
50
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
0.04
0.03
0.02
0.01
0
ID = 11.5A
VGS =10V
ID = 11.5A
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
, JUNCTION TEMPERATURE (°C)
V
,GATE-SOURCE VOLTAGE (V)
J
GS
Figure 3. On-Resistance Variation with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Temperature.
50
50
TJ = -55°C
VDS = 10V
VGS=0V
25°C
10
1
40
30
20
10
0
125°C
T = 125°C
J
25°C
0.1
-55°C
0.01
0.001
0.0001
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1
1.2
V
, GATE TO SOURCE VOLTAGE (V)
GS
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4884DY Rev.A
Typical Electrical And Thermal Characteristics
3000
2000
10
C
C
VDS = 10V
ID = 11.5A
iss
15V
8
6
4
2
0
20V
1000
500
oss
C
rss
200
100
f = 1 MHz
VGS = 0V
0
10
20
30
40
0.1
0.2
0.5
1
2
5
10
20 30
Q
, GATE CHARGE (nC)
g
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
50
100
50
SINGLE PULSE
RqJA =See Note 1c
TA = 25°C
20
10
40
30
20
10
0
3
1
VGS = 10V
SINGLE PULSE
0.1
Rq = See Note 1c
JA
TA = 25°C
0.01
0.1
0.001
0.01
0.1
1
10
100 300
0.2
0.5
1
2
5
10
30 50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
q
0.2
0.2
JA
q
R
=See Note 1c
JA
q
0.1
0.1
0.05
0.05
P(pk)
0.02
0.02
0.01
t1
t2
T - T = P * R (t)
JA
q
0.01
Single Pulse
0.005
J
A
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4884DY Rev.A
SOIC-8 Tape and Reel Data
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
ELECTROSTATIC
SENSITIVE DEVICES
DO NO
T
S
M
HI
P
OR
S
TO
RE
N
E
AR
S
T
RO NG
E
L
E
CTROS
T
ATIC
made from
a dissipative (carbon filled) polycarbonate
E
L
E
CTRO
AGN
E
TI
C,
M
AG NE
T
IC
O
R R ADIO ACTIVE FI ELD S
TNR DATE
PT NUMB E
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
R
PEEL STRENGTH MIN ______________gms
MAX _____________gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
comes in different sizes depending on the number of parts
shipped.
a barcode labeled shipping box which
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
F
NDS
9959
852
Customized
Label
F
F
F
F
Pin 1
SOIC (8lds) Packaging Information
Standard
L86Z
F011
D84Z
Packaging Option
(no flow code)
SOIC-8 Unit Orientation
Packaging type
TNR
2,500
Rail/Tube
TNR
4,000
TNR
500
Qty per Reel/Tube/Bag
Reel Size
95
-
13" Dia
13" Dia
7" Dia
Box Dimension (mm)
Max qty per Box
343x64x343 530x130x83 343x64x343 184x187x47
5,000
0.0774
0.6060
30,000
0.0774
-
8,000
0.0774
0.9696
1,000
0.0774
0.1182
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
ESD Label
F63TN Label
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
640mm minimum or
80 empty pockets
1680mm minimum or
210 empty pockets
July 1999, Rev. B
©2000 Fairchild Semiconductor International
SOIC-8 Tape and Reel Data, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
0.450
+/-
0.150
(8lds)
SOIC
(12mm)
6.50
+/-0.10
5.30
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.1
+/-0.10
9.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
July 1999, Rev. B
SOIC-8 Package Dimensions
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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