AO8804 [FREESCALE]

Dual N-Channel Logical Level MOSFET Fast switching speed; 双N沟道逻辑电平MOSFET的开关速度快
AO8804
型号: AO8804
厂家: Freescale    Freescale
描述:

Dual N-Channel Logical Level MOSFET Fast switching speed
双N沟道逻辑电平MOSFET的开关速度快

开关
文件: 总5页 (文件大小:360K)
中文:  中文翻译
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Freescale  
AO8804/MC8804  
Dual N-Channel Logical Level MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (OHM)  
ID (A)  
6.8  
0.022 @ VGS = 4.5 V  
0.030 @ VGS = 2.5V  
0.047 @ VGS = 1.8V  
20  
5.8  
4.7  
Low rDS(on) provides higher efficiency and  
extends battery life  
TSSOP-8  
Top View  
D2  
D1  
Low thermal impedance copper leadframe  
TSSOP-8 saves board space  
8
7
6
5
D2  
S2  
S2  
G2  
D1  
S1  
S1  
G1  
1
2
3
4
G2  
G1  
Fast switching speed  
S2  
N-Channel MOSFET  
S1  
N-Channel MOSFET  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
20  
V
±12  
TA=25oC  
TA=70oC  
6.8  
5.4  
±30  
1.5  
1.5  
1.0  
Continuous Drain Currenta  
ID  
A
Pulsed Drain Currentb  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
IDM  
IS  
A
TA=25oC  
TA=70oC  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typ  
Max  
83  
t <= 10 sec  
Maximum Junction-to-Ambienta  
Steady State  
72  
oC/W  
100  
120  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
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1
Freescale  
AO8804/MC8804  
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
Test Conditions  
Unit  
Min Typ Max  
Static  
Gate-Threshold Voltage  
V
VGS(th)  
IGSS  
VGS = VDS, ID = 250 uA  
VDS = 0 V, VGS = ± 12 V  
0.7  
30  
Gate-Body Leakage  
±100  
1
nA  
uA  
uA  
A
VDS = 16 V, VGS = 0 V  
VDS = 16 V, VGS = 0 V, TJ = 55oC  
VDS = 5 V, VGS = 4.5 V  
Zero Gate Voltage Drain Current  
On-State Drain CurrentA  
IDSS  
10  
ID(on)  
VGS = 4.5 V, ID = 6.8 A  
VGS = 2.5 V, ID = 5.8 A  
VGS = 1.8 V, ID = 4.7 A  
VDS = 10 V, ID = 6.8 A  
IS = 6.8 A, VGS = 0 V  
0.022  
0.030  
0.047  
Drain-Source On-ResistanceA  
rDS(on)  
Forward TranconductanceA  
Diode Forward VoltageA  
S
g
fs  
25  
VSD  
0.89  
V
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Qg  
Qgs  
Qgd  
td(on)  
tr  
13.4  
0.9  
2.0  
18  
VDS=10V, VGS=4.5V, ID=6.8A  
nC  
nS  
VDD=10V, VGS=4.5V, ID=1A ,  
25  
RGE N=10  
Turn-Off Delay Time  
Fall-Time  
td(off)  
tf  
50  
25  
Notes  
a.  
Pulse test: PW <= 300us duty cycle <= 2%.  
b.  
Guaranteed by design, not subject to production testing.  
e to any products herein. freescale makes no warranty, representation  
FREESCALE reserves the right to make changes without further notic  
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or  
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and  
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by  
under its patent rights nor the  
are not designed,  
rights of others. freescale products  
customer’s technical experts. freescale does not convey any license  
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or  
of the freescale product could create  
sustain life, or for any other application in which the failure  
a situation where personal injury or death may occur.  
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale  
and its  
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and  
reasonable attorney  
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative  
Action Employer.  
www.freescale.net.cn  
2
Freescale  
AO8804/MC8804  
Typical Electrical Characteristics (N-Channel)  
30  
25  
20  
15  
10  
5
30  
3.0V  
VGS = 10.0V  
4.5V  
VDS = 5V  
TA = -55oC  
125oC  
25  
20  
15  
10  
5
3.5V  
2.5V  
25oC  
2.0V  
2.5  
0
0
0
0.5  
1
1.5  
2
3
0.5  
1
1.5  
2
2.5  
3
3.5  
VGS, GATE TO SOURCE VOLTAGE (V)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Transfer Characteristics  
Output Characteristics  
900  
2.4  
2.2  
2
VGS = 2.0V  
f = 1MHz  
VGS = 0 V  
600  
300  
0
1.8  
1.6  
1.4  
1.2  
1
Ciss  
2.5V  
3.0V  
3.5V  
4.0V  
Coss  
4.5V  
10.0V  
Crss  
0.8  
0
4
8
12  
16  
20  
0
5
10  
15  
20  
25  
30  
ID, DRAIN CURRENT (A)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
On-Resistance vs. Drain Current  
Capacitance  
5
4
3
2
1
0
1.6  
ID = 4.5A  
VGS = 10V  
ID = 4.5A  
VDS = 5V  
15V  
1.4  
1.2  
1
10V  
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
TJ, JUNCTION TEMPERATURE (oC)  
Qg, GATE CHARGE (nC)  
Gate Charge  
On-Resistance vs. Junction Temperature  
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3
Freescale  
AO8804/MC8804  
Typical Electrical Characteristics (N-Channel)  
0.09  
0.07  
0.05  
0.03  
0.01  
100  
VGS = 0V  
ID = 2.25A  
10  
1
TA = 125oC  
25oC  
0.1  
0.01  
TA = 125oC  
-55oC  
0.001  
0.0001  
TA = 25oC  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
2
4
6
8
10  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
50  
40  
30  
20  
10  
0
2.2  
2
SINGLE PULSE  
RθJA = 208°C/W  
TA = 25°C  
VDS = VGS  
ID = -250mA  
1.8  
1.6  
1.4  
1.2  
1
-50 -25  
0
25 50  
75 100 125 150 175  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, TIME (sec)  
TA, AMBIENT TEMPERATURE (oC)  
Vth Gate to Source Voltage Vs Temperature  
Single Pulse Power, Junction-to-Ambient  
1
D = 0.5  
RθJA(t) = r(t) * RθJA  
RθJA =208 °C/W  
0.2  
0.1  
0.1  
0.05  
P(pk)  
0.02  
0.01  
t1  
t2  
0.01  
TJ - TA = P * RθJA(t)  
Duty Cycle, D = t1 / t2  
SINGLE PULSE  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, TIME (sec)  
Normalized Thermal Transient Junction to Ambient  
www.freescale.net.cn  
4
Freescale  
AO8804/MC8804  
Package Information  
TSSOP-8: 8LEAD  
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5

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