AOL1428A [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AOL1428A |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：509K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1428A
30V N-Channel MOSFET
General Description
technology with a low resistance package to provide
The AOL1428A combines advanced trench MOSFET
extremely low RDS(ON). This device is suitable for use as a
applications.
high side switch in SMPS and general purpose
Features
VDS
30V
49A
ID (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS=10V)
< 11.5mΩ
RDS(ON) (at VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
Continuous Drain
Current G
±20
49
V
A
TC=25°C
TC=100°C
38
Pulsed Drain Current C
160
12.4
9.7
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
IAS, IAR
30
A
EAS, EAR
45
mJ
TC=25°C
93
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
46
2.1
PDSM
W
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
18.5
45
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
60
Steady-State
Steady-State
RθJC
1.3
1.6
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AOL1428A
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
100
2.6
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.5
2
VGS=10V, VDS=5V
160
A
VGS=10V, ID=12.4A
6.2
9.7
8.7
60
8
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
12.5
11.5
VGS=4.5V, ID=12.4A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=12.4A
IS=1A,VGS=0V
S
V
A
0.7
1
Maximum Body-Diode Continuous Current
49
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
860
125
65
1080
180
110
1
1300
240
160
1.5
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
14
6.4
2.7
1.8
18
8
22
9.6
4.1
4.2
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=15V, ID=12.4A
Qgs
Qgd
tD(on)
tr
3.4
3
6
VGS=10V, VDS=15V, RL=1.1Ω,
3
ns
RGEN=3Ω
tD(off)
tf
21
3
ns
ns
IF=12.4A, dI/dt=500A/ms
IF=12.4A, dI/dt=500A/ms
trr
7
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8.5
13
10
16
ns
Qrr
10
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
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AOL1428A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
120
100
80
60
40
20
0
10V
6V
VDS=5V
7V
4.5V
4V
3.5V
125°C
VGS=3V
25°C
0
2
4
6
8
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
10
8
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=12.4A
VGS=4.5V
VGS=4.5V
6
ID=12.4A
VGS=10V
4
0.8
2
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=12.4A
125°C
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
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AOL1428A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
1400
1200
1000
800
600
400
200
0
VDS=15V
ID=12.4A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
Qg (nC)
15
20
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
600
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.6°C/W
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
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AOL1428A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10.0
1.0
100
80
60
40
20
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
TA=25°C
1
0
0
0.00001
0.001
0.1
10
1000
25
50
75
100
125
150
175
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
0.001
Ton
Single Pulse
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOL1428A
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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