AON4803 [FREESCALE]
20V Dual P-Channel MOSFET; 双路20V P沟道MOSFET
| 型号： | AON4803 |
| 厂家： | 
Freescale |
| 描述： | 20V Dual P-Channel MOSFET |
| 文件： | 总5页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4803
20V Dual P-Channel MOSFET
General Description
technology with a low resistance package to provide
The AON4803 combines advanced trench MOSFET
extremely low RDS(ON)
. This device is ideal for load switch and battery protection applications.
Product Summary
VDS
-20V
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
-3.4A
< 90mΩ
< 120mΩ
< 165mΩ
D2
D1
Top View
1
8
S1
G1
S2
G2
D1
D1
D2
D2
2
3
7
6
4
5
G2
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
-3.4
V
A
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-2.7
Pulsed Drain Current C
IDM
PD
-15
TA=25°C
TA=70°C
1.7
W
°C
Power Dissipation B
1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
51
88
28
75
110
35
RθJA
Steady-State
Steady-State
RθJL
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AON4803
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-4.5V, ID=-3.4A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1
nA
V
VGS(th)
ID(ON)
-0.4
-15
-0.65
A
65
90
90
125
120
165
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.5A
80
mΩ
mΩ
S
VGS=-1.8V, ID=-1.5A
100
12
VDS=-5V, ID=-3.4A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.7
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
745
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
VGS=0V, VDS=0V, f=1MHz
15
23
8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.1
0.6
1.6
10
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-3.4A
VGS=-4.5V, VDS=-10V, RL=2.9Ω,
12
RGEN=3Ω
tD(off)
tf
44
22
trr
IF=-3.4A, dI/dt=100A/µs
IF=-3.4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
ns
Qrr
nC
7.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
15
10
5
-4.5V
VDS=-5V
-3.0V
-2.5V
125°C
-2.0V
25°C
VGS=-1.5V
4
0
0
0
1
2
3
4
0
1
2
3
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
90
1.4
1.2
1
VGS=-2.5V
ID=-2.5A
80
70
60
50
40
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
VGS=-4.5V
VGS=-4.5V
ID=-3.4A
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
180
140
100
60
1.0E+02
1.0E+01
ID=-3.4A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
VDS=-10V
ID=-3.4A
1200
1000
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
-VDS (Volts)
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=110°C/W
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
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AON4803
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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