MMG3009NT1 [FREESCALE]

Heterojunction Bipolar Transistor (InGaP HBT); 异质结双极晶体管( InGaP HBT的)
MMG3009NT1
型号: MMG3009NT1
厂家: Freescale    Freescale
描述:

Heterojunction Bipolar Transistor (InGaP HBT)
异质结双极晶体管( InGaP HBT的)

晶体 晶体管
文件: 总12页 (文件大小:224K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Document Number: MMG3009NT1  
Rev. 2, 5/2006  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
(InGaP HBT)  
Broadband High Linearity Amplifier  
MMG3009NT1  
The MMG3009NT1 is a General Purpose Amplifier that is internally  
input and output matched. It is designed for a broad range of Class A,  
small-signal, high linearity, general purpose applications. It is suitable  
for applications with frequencies from 0 to 6000 MHz such as Cellular,  
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general  
small-signal RF.  
0-6000 MHz, 15 dB  
18 dBm  
Features  
InGaP HBT  
Frequency: 0 to 6000 MHz  
P1dB: 18 dBm @ 900 MHz  
Small-Signal Gain: 15 dB @ 900 MHz  
Third Order Output Intercept Point: 34 dBm @ 900 MHz  
Single 5 Volt Supply  
Internally Matched to 50 Ohms  
Low Cost SOT-89 Surface Mount Package  
RoHS Compliant  
1
2
3
CASE 1514-01, STYLE 1  
SOT-89  
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.  
PLASTIC  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Characteristic  
Symbol 900 2140 3500 Unit  
Rating  
Symbol  
Value  
Unit  
V
MHz MHz  
MHz  
(2)  
Supply Voltage  
V
7
300  
CC  
CC  
Small-Signal Gain  
(S21)  
G
15  
-13  
-17  
18  
14  
-26  
-15  
18  
12.5  
dB  
dB  
dB  
p
(2)  
Supply Current  
RF Input Power  
I
mA  
dBm  
°C  
P
10  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1db  
IP3  
-22  
-24  
Storage Temperature Range  
T
stg  
-65 to +150  
150  
(3)  
Output Return Loss  
(S22)  
Junction Temperature  
T
°C  
J
2. Continuous voltage and current applied to device.  
3. For reliable operation, the junction temperature should not  
Power Output @1dB  
Compression  
17.5 dBm  
31 dBm  
exceed 150°C.  
Third Order Output  
Intercept Point  
34  
32  
1. V = 5 Vdc, T = 25°C, 50 ohm system  
CC  
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 70 mA, T = 25°C)  
CC  
CC  
C
(4)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
81  
°C/W  
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)  
CC  
C
Characteristic  
Symbol  
Min  
14.3  
Typ  
15  
Max  
Unit  
dB  
Small-Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
G
p
IRL  
ORL  
P1dB  
IP3  
-13  
-17  
18  
dB  
dB  
Power Output @ 1dB Compression  
Third Order Output Intercept Point  
Noise Figure  
dBm  
dBm  
dB  
34  
NF  
4.2  
70  
(1)  
Supply Current  
I
58  
82  
mA  
V
CC  
(1)  
Supply Voltage  
V
5
CC  
1. For reliable operation, the junction temperature should not exceed 150°C.  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-2  
Table 5. Functional Pin Description  
2
Pin  
Pin Function  
Number  
1
2
3
RF  
in  
Ground  
RF /DC Supply  
out  
1
2
3
Figure 1. Functional Diagram  
Table 6. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD 22-A114)  
Machine Model (per EIA/JESD 22-A115)  
Charge Device Model (per JESD 22-C101)  
1A (Minimum)  
A (Minimum)  
IV (Minimum)  
Table 7. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD 22-A113, IPC/JEDEC J-STD-020  
1
260  
°C  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-3  
50 OHM TYPICAL CHARACTERISTICS  
20  
0
T
= 85°C  
C
25°C  
−10  
S11  
15  
10  
5
−40°C  
−20  
S22  
−30  
V
= 5 Vdc  
= 70 mA  
CC  
V
= 5 Vdc  
CC  
I
CC  
−40  
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)  
f, FREQUENCY (GHz)  
Figure 2. Small-Signal Gain (S21) versus  
Frequency  
Figure 3. Input/Output Return Loss versus  
Frequency  
21  
19  
20  
19  
18  
17  
16  
15  
14  
13  
17  
15  
13  
2140 MHz  
900 MHz  
1960 MHz  
3500 MHz  
11  
2600 MHz  
V
= 5 Vdc  
= 70 mA  
CC  
9
7
V
= 5 Vdc  
= 70 mA  
CC  
I
CC  
I
CC  
0.5  
1
1.5  
2
2.5  
3
3.5  
10  
12  
14  
16  
18  
20  
P
, OUTPUT POWER (dBm)  
out  
f, FREQUENCY (GHz)  
Figure 4. Small-Signal Gain versus Output  
Power  
Figure 5. P1dB versus Frequency  
36  
100  
80  
33  
30  
60  
40  
20  
0
27  
24  
21  
V
= 5 Vdc  
= 70 mA  
CC  
I
CC  
1 MHz Tone Spacing  
4
4.2  
4.4  
4.6  
4.8  
5
5.2  
5.4  
0
1
2
3
4
V
, COLLECTOR VOLTAGE (V)  
CC  
f, FREQUENCY (GHz)  
Figure 6. Collector Current versus Collector  
Voltage  
Figure 7. Third Order Output Intercept Point  
versus Frequency  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-4  
50 OHM TYPICAL CHARACTERISTICS  
36  
35  
34  
33  
30  
33  
32  
31  
30  
27  
24  
21  
V
= 5 Vdc  
f = 900 MHz  
CC  
29  
28  
f = 900 MHz  
1 MHz Tone Spacing  
1 MHz Tone Spacing  
−40  
−20  
0
20  
40  
60  
80  
100  
4.9  
4.95  
5
5.05  
5.1  
T, TEMPERATURE (_C)  
Figure 9. Third Order Output Intercept Point  
versus Case Temperature  
V
, COLLECTOR VOLTAGE (V)  
CC  
Figure 8. Third Order Output Intercept Point  
versus Collector Voltage  
5
10  
−30  
−40  
−50  
−60  
−70  
−80  
4
10  
V
= 5 Vdc  
= 70 mA  
CC  
I
CC  
f = 900 MHz  
1 MHz Tone Spacing  
3
10  
120  
125  
130  
135  
140  
145  
150  
9
15  
0
3
6
12  
T , JUNCTION TEMPERATURE (°C)  
J
P
, OUTPUT POWER (dBm)  
out  
NOTE: The MTTF is calculated with V = 5 Vdc, I = 70 mA  
CC CC  
Figure 10. Third Order Intermodulation versus  
Output Power  
Figure 11. MTTF versus Junction Temperature  
−20  
8
V
= 5 Vdc  
= 70 mA  
CC  
I
CC  
f = 2140 MHz  
−30  
−40  
6
4
2
0
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth  
PAR = 8.5 dB @ 0.01% Probability (CCDF)  
−50  
−60  
−70  
V
= 5 Vdc  
= 70 mA  
CC  
I
CC  
0
1
2
3
4
2
4
6
8
10  
P , OUTPUT POWER (dBm)  
out  
12  
14  
16  
f, FREQUENCY (GHz)  
Figure 12. Noise Figure versus Frequency  
Figure 13. Single-Carrier W-CDMA Adjacent  
Channel Power Ratio versus Output Power  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-5  
50 OHM APPLICATION CIRCUIT: 40-300 MHz  
V
SUPPLY  
R1  
C3  
C4  
Z5  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z3  
Z4  
Z1  
Z2  
C1  
C2  
CC  
Z1, Z5  
Z2  
Z3  
0.347x 0.058Microstrip  
0.575x 0.058Microstrip  
0.172x 0.058Microstrip  
Z4  
PCB  
0.403x 0.058Microstrip  
Getek Grade ML200C, 0.031, ε = 4.1  
r
Figure 14. 50 Ohm Test Circuit Schematic  
20  
S21  
10  
0
R1  
C4  
C3  
L1  
−10  
−20  
C2  
C1  
S22  
−30  
−40  
V
= 5 Vdc  
= 70 mA  
CC  
S11  
MMG30XX  
Rev 2  
I
CC  
0
100  
200  
300  
400  
500  
f, FREQUENCY (MHz)  
Figure 15. S21, S11 and S22 versus Frequency  
Figure 16. 50 Ohm Test Circuit Component Layout  
Table 8. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
0.01 μF Chip Capacitors  
Part Number  
0603A103JAT2A  
0603A102JAT2A  
BK2125HM471  
Manufacturer  
AVX  
C1, C2, C3  
C4  
L1  
R1  
1000 pF Chip Capacitor  
470 nH Chip Inductor  
0 W Chip Resistor  
AVX  
Taiyo Yuden  
Panasonic  
ERJ3GEY0R00V  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-6  
50 OHM APPLICATION CIRCUIT: 300-3600 MHz  
V
SUPPLY  
R1  
C3  
C4  
Z5  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z3  
Z4  
Z1  
Z2  
C1  
C2  
CC  
Z1, Z5  
Z2  
Z3  
0.347x 0.058Microstrip  
0.575x 0.058Microstrip  
0.172x 0.058Microstrip  
Z4  
PCB  
0.403x 0.058Microstrip  
Getek Grade ML200C, 0.031, ε = 4.1  
r
Figure 17. 50 Ohm Test Circuit Schematic  
30  
20  
10  
R1  
S21  
C4  
C3  
L1  
0
C2  
C1  
−10  
S22  
−20  
−30  
V
= 5 Vdc  
= 70 mA  
CC  
S11  
MMG30XX  
Rev 2  
I
CC  
300  
800  
1300  
1800  
2300  
2800  
3300  
3800  
f, FREQUENCY (MHz)  
Figure 18. S21, S11 and S22 versus Frequency  
Figure 19. 50 Ohm Test Circuit Component Layout  
Table 9. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
150 pF Chip Capacitors  
Part Number  
06035A151JAT2A  
0603A103JAT2A  
0603A102JAT2A  
HK160856NJ-T  
ERJ3GEY0R00V  
Manufacturer  
AVX  
C1, C2  
C3  
0.01 μF Chip Capacitor  
1000 pF Chip Capacitor  
56 nH Chip Inductor  
0 W Chip Resistor  
AVX  
C4  
AVX  
L1  
Taiyo Yuden  
Panasonic  
R1  
MMG3009NT1  
6-7  
Freescale Semiconductor  
RF Product Device Data  
50 OHM TYPICAL CHARACTERISTICS  
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 70 mA, TC = 255C  
S
S
S
S
22  
11  
21  
12  
f
|S  
|
∠ φ  
|S  
|
∠ φ  
|S  
|
∠ φ  
|S |  
22  
∠ φ  
GHz  
11  
21  
12  
0.1  
0.15  
0.2  
0.19606  
0.19734  
0.19944  
0.20027  
0.19924  
0.19543  
0.19419  
0.19172  
0.18914  
0.18788  
0.18596  
0.18399  
0.18285  
0.18159  
0.18056  
0.17973  
0.17932  
0.17920  
0.17847  
0.17754  
0.17453  
0.17205  
0.17066  
0.16951  
0.16662  
0.16577  
0.16504  
0.16426  
0.16609  
0.16661  
0.16797  
0.17042  
0.17177  
0.17361  
0.17663  
0.17969  
0.18333  
0.18634  
0.18991  
0.19272  
0.19593  
0.19925  
0.20272  
0.20521  
0.20819  
0.21027  
-174.964  
-176.357  
169.849  
168.421  
166.435  
164.497  
162.266  
160.135  
158.072  
156.056  
154.01  
6.33492  
6.30368  
6.27983  
6.24623  
6.22884  
6.22675  
6.21021  
6.19495  
6.18191  
6.16313  
6.14591  
6.12734  
6.10486  
6.08449  
6.06038  
6.03306  
6.00923  
5.98147  
5.95646  
5.92809  
5.89423  
5.86296  
5.83017  
5.79633  
5.76557  
5.73189  
5.69605  
5.65985  
5.63288  
5.60045  
5.56701  
5.53367  
5.50453  
5.47270  
5.43993  
5.40358  
5.36970  
5.33711  
5.30347  
5.26942  
5.23491  
5.19782  
5.15894  
5.11750  
5.07836  
5.03981  
175.897  
173.26  
0.10115  
0.10204  
0.10220  
0.10243  
0.10334  
0.10364  
0.10357  
0.10351  
0.10361  
0.10378  
0.10379  
0.10396  
0.10408  
0.10411  
0.10427  
0.10440  
0.10453  
0.10467  
0.10485  
0.10508  
0.10519  
0.10534  
0.10542  
0.10564  
0.10580  
0.10602  
0.10620  
0.10641  
0.10680  
0.10706  
0.10732  
0.10761  
0.10790  
0.10818  
0.10841  
0.10863  
0.10919  
0.10950  
0.10980  
0.11012  
0.11037  
0.11076  
0.11107  
0.11132  
0.11160  
0.11177  
-0.614  
-1.587  
-2.173  
-2.498  
-2.998  
-3.636  
-4.18  
0.07282  
0.07571  
0.07648  
0.08038  
0.07928  
0.07836  
0.07876  
0.07882  
0.07903  
0.07946  
0.08061  
0.08181  
0.08346  
0.08496  
0.08717  
0.08917  
0.09202  
0.09484  
0.09809  
0.10057  
0.10471  
0.10843  
0.11227  
0.11601  
0.12012  
0.12430  
0.12842  
0.13238  
0.13929  
0.14264  
0.14623  
0.14778  
0.15034  
0.15223  
0.15382  
0.15575  
0.15708  
0.15722  
0.15781  
0.15859  
0.15951  
0.16086  
0.16242  
0.16412  
0.16622  
0.16892  
176.529  
178.062  
-178.213  
-175.337  
-172.371  
-172.028  
-169.383  
-167.245  
-165.903  
-164.125  
-162.978  
-162.118  
-161.229  
-160.812  
-160.896  
-161.031  
-161.574  
-162.293  
-163.293  
-164.366  
-165.489  
-167.229  
-168.9  
171.036  
169.018  
166.867  
164.532  
162.42  
0.25  
0.3  
0.35  
0.4  
0.45  
0.5  
160.278  
158.065  
155.935  
153.778  
151.629  
149.511  
147.384  
145.27  
-4.669  
-5.256  
-5.746  
-6.277  
-6.756  
-7.313  
-7.817  
-8.376  
-8.885  
-9.38  
0.55  
0.6  
0.65  
0.7  
152.064  
150.008  
148.088  
146.09  
0.75  
0.8  
0.85  
0.9  
144.286  
142.485  
140.759  
139.226  
137.531  
136.047  
134.871  
133.54  
143.153  
141.039  
138.952  
136.927  
134.838  
132.763  
130.716  
128.685  
126.662  
124.647  
122.631  
120.653  
118.678  
116.712  
114.805  
112.889  
110.947  
109.079  
107.137  
105.194  
103.282  
101.431  
99.484  
0.95  
1.0  
-9.995  
-10.462  
-11.017  
-11.541  
-12.012  
-12.612  
-13.155  
-13.654  
-14.194  
-14.728  
-15.283  
-15.856  
-16.422  
-16.914  
-17.529  
-18.111  
-18.625  
-19.165  
-19.761  
-20.39  
-21.017  
-21.621  
-22.222  
-22.899  
-23.629  
-24.273  
-24.939  
-25.64  
-26.346  
1.05  
1.1  
1.15  
1.2  
1.25  
1.3  
132.305  
131.182  
130.038  
128.988  
128.206  
122.177  
120.535  
118.895  
117.389  
116.114  
114.897  
113.75  
-170.51  
-172.32  
-174.175  
-176.041  
-178.197  
-178.349  
179.292  
176.482  
174.032  
171.358  
168.855  
166.27  
1.35  
1.4  
1.45  
1.5  
1.55  
1.6  
1.65  
1.7  
1.75  
1.8  
1.85  
1.9  
112.634  
111.562  
110.534  
109.707  
108.497  
107.602  
106.721  
105.922  
104.933  
103.761  
102.506  
163.924  
161.656  
159.517  
157.67  
1.95  
2.0  
97.624  
2.05  
2.1  
95.722  
156.162  
154.73  
93.803  
2.15  
2.2  
91.865  
153.761  
152.923  
151.958  
151.355  
150.63  
89.97  
2.25  
2.3  
88.119  
86.232  
2.35  
84.384  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-8  
50 OHM TYPICAL CHARACTERISTICS  
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 70 mA, TC = 255C (continued)  
S
S
S
S
22  
11  
21  
12  
f
|S  
|
∠ φ  
|S  
|
∠ φ  
|S  
|
∠ φ  
|S |  
22  
∠ φ  
GHz  
11  
21  
12  
2.4  
2.45  
2.5  
0.21179  
0.21372  
0.21503  
0.21607  
0.21693  
0.21764  
0.21800  
0.21817  
0.21833  
0.21805  
0.21865  
0.21925  
0.21915  
0.22110  
0.22166  
0.22283  
0.22458  
0.22637  
0.22771  
0.23010  
0.23244  
0.23531  
0.23838  
0.24191  
0.24470  
101.509  
100.321  
99.084  
98.079  
96.937  
95.679  
94.585  
93.428  
92.207  
91.061  
89.888  
88.748  
87.532  
86.342  
85.246  
84.227  
83.152  
82.137  
81.039  
79.979  
78.98  
4.99976  
4.95674  
4.91517  
4.87557  
4.83415  
4.79330  
4.75322  
4.71387  
4.67702  
4.63817  
4.60218  
4.56625  
4.53210  
4.50064  
4.46608  
4.43647  
4.40552  
4.37427  
4.34455  
4.31085  
4.28183  
4.25137  
4.22125  
4.19033  
4.15822  
82.526  
80.649  
78.813  
77.083  
75.317  
73.409  
71.62  
0.11206  
0.11219  
0.11247  
0.11260  
0.11290  
0.11315  
0.11317  
0.11349  
0.11366  
0.11402  
0.11435  
0.11463  
0.11512  
0.11540  
0.11582  
0.11604  
0.11651  
0.11696  
0.11740  
0.11778  
0.11825  
0.11856  
0.11892  
0.11931  
0.11966  
-26.995  
-27.627  
-28.368  
-29.056  
-29.737  
-30.261  
-31.061  
-31.733  
-32.454  
-33.132  
-33.832  
-34.552  
-35.281  
-36.033  
-36.792  
-37.437  
-38.235  
-38.955  
-39.776  
-40.645  
-41.441  
-42.323  
-43.156  
-43.953  
-44.868  
0.17307  
0.17696  
0.18136  
0.18649  
0.19209  
0.19800  
0.20392  
0.20970  
0.21628  
0.22172  
0.22856  
0.23450  
0.24044  
0.24561  
0.25129  
0.25625  
0.26146  
0.26652  
0.27125  
0.27548  
0.28049  
0.28504  
0.28907  
0.29393  
0.29797  
150.179  
149.454  
148.699  
147.675  
146.671  
145.149  
144.12  
2.55  
2.6  
2.65  
2.7  
2.75  
2.8  
69.917  
68.159  
66.317  
64.555  
62.873  
61.144  
59.382  
57.613  
55.954  
54.104  
52.337  
50.582  
48.824  
47.09  
142.804  
141.065  
139.329  
137.508  
135.667  
133.457  
131.639  
129.229  
127.153  
124.84  
2.85  
2.9  
2.95  
3.0  
3.05  
3.1  
3.15  
3.2  
3.25  
3.3  
122.578  
120.071  
118.04  
3.35  
3.4  
115.642  
113.247  
111.227  
108.97  
3.45  
3.5  
78.054  
77.028  
76.08  
45.379  
43.528  
41.795  
40.059  
3.55  
3.6  
75.139  
106.843  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-9  
1.7  
7.62  
0.305 diameter  
2.49  
3.48  
0.58  
5.33  
2.54  
1.27  
1.27  
0.86  
0.64  
3.86  
NOTES:  
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE  
USED IN PCB LAYOUT DESIGN.  
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS  
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.  
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN  
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO  
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL  
AND RF PERFORMANCE.  
Recommended Solder Stencil  
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM  
PITCH.  
Figure 20. Recommended Mounting Configuration  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-10  
PACKAGE DIMENSIONS  
3
4
4.70  
4.40  
A
1.87  
1.79  
M
0.15  
C A B  
0.60  
0.40  
2X R0.15 TYP  
B
1.70  
1.40  
°
2X 4 TYP  
2.70  
2.40  
3
4
4.50  
3.70  
1.30  
0.70  
5
2X  
1
2
3
M
0.20  
C B  
0.48  
0.38  
0.48  
0.38  
M
0.15  
C A B  
0.58  
0.48  
M
0.15  
C A  
B
0.46  
0.40  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. ALL DIMENSIONS ARE IN MILLIMETERS.  
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS  
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE  
BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES  
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD  
FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE.  
4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES  
OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR  
BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING  
ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE  
PLASTIC BODY.  
°
2X 4 TYP  
E.P.  
2X R0.20  
5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.  
4X  
0.10 C  
1.35  
1.25  
SEATING PLANE  
0.65  
0.55  
C
1.50  
1.50  
1.65  
1.55  
STYLE 1:  
PIN 1. RF INPUT  
2. GROUND  
3. RF OUTPUT  
CASE 1514-01  
ISSUE C  
BOTTOM VIEW  
SOT-89  
PLASTIC  
MMG3009NT1  
Freescale Semiconductor  
RF Product Device Data  
6-11  
How to Reach Us:  
Home Page:  
www.freescale.com  
E-mail:  
support@freescale.com  
USA/Europe or Locations Not Listed:  
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support@freescale.com  
Information in this document is provided solely to enable system and software  
implementers to use Freescale Semiconductor products. There are no express or  
implied copyright licenses granted hereunder to design or fabricate any integrated  
circuits or integrated circuits based on the information in this document.  
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Document Number: MMG3009NT1  
Rev. 2, 5/2006  

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