MMG3009NT1 [FREESCALE]
Heterojunction Bipolar Transistor (InGaP HBT); 异质结双极晶体管( InGaP HBT的)型号: | MMG3009NT1 |
厂家: | Freescale |
描述: | Heterojunction Bipolar Transistor (InGaP HBT) |
文件: | 总12页 (文件大小:224K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Document Number: MMG3009NT1
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3009NT1
The MMG3009NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small-signal RF.
0-6000 MHz, 15 dB
18 dBm
Features
InGaP HBT
• Frequency: 0 to 6000 MHz
• P1dB: 18 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
1
2
3
CASE 1514-01, STYLE 1
SOT-89
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Symbol 900 2140 3500 Unit
Rating
Symbol
Value
Unit
V
MHz MHz
MHz
(2)
Supply Voltage
V
7
300
CC
CC
Small-Signal Gain
(S21)
G
15
-13
-17
18
14
-26
-15
18
12.5
dB
dB
dB
p
(2)
Supply Current
RF Input Power
I
mA
dBm
°C
P
10
in
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-22
-24
Storage Temperature Range
T
stg
-65 to +150
150
(3)
Output Return Loss
(S22)
Junction Temperature
T
°C
J
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
Power Output @1dB
Compression
17.5 dBm
31 dBm
exceed 150°C.
Third Order Output
Intercept Point
34
32
1. V = 5 Vdc, T = 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 70 mA, T = 25°C)
CC
CC
C
(4)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
81
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
C
Characteristic
Symbol
Min
14.3
—
Typ
15
Max
—
Unit
dB
Small-Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
IP3
-13
-17
18
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
34
—
NF
—
4.2
70
—
(1)
Supply Current
I
58
—
82
—
mA
V
CC
(1)
Supply Voltage
V
5
CC
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
Machine Model (per EIA/JESD 22-A115)
Charge Device Model (per JESD 22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-3
50 OHM TYPICAL CHARACTERISTICS
20
0
T
= 85°C
C
25°C
−10
S11
15
10
5
−40°C
−20
S22
−30
V
= 5 Vdc
= 70 mA
CC
V
= 5 Vdc
CC
I
CC
−40
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
21
19
20
19
18
17
16
15
14
13
17
15
13
2140 MHz
900 MHz
1960 MHz
3500 MHz
11
2600 MHz
V
= 5 Vdc
= 70 mA
CC
9
7
V
= 5 Vdc
= 70 mA
CC
I
CC
I
CC
0.5
1
1.5
2
2.5
3
3.5
10
12
14
16
18
20
P
, OUTPUT POWER (dBm)
out
f, FREQUENCY (GHz)
Figure 4. Small-Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
36
100
80
33
30
60
40
20
0
27
24
21
V
= 5 Vdc
= 70 mA
CC
I
CC
1 MHz Tone Spacing
4
4.2
4.4
4.6
4.8
5
5.2
5.4
0
1
2
3
4
V
, COLLECTOR VOLTAGE (V)
CC
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-4
50 OHM TYPICAL CHARACTERISTICS
36
35
34
33
30
33
32
31
30
27
24
21
V
= 5 Vdc
f = 900 MHz
CC
29
28
f = 900 MHz
1 MHz Tone Spacing
1 MHz Tone Spacing
−40
−20
0
20
40
60
80
100
4.9
4.95
5
5.05
5.1
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
V
, COLLECTOR VOLTAGE (V)
CC
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
5
10
−30
−40
−50
−60
−70
−80
4
10
V
= 5 Vdc
= 70 mA
CC
I
CC
f = 900 MHz
1 MHz Tone Spacing
3
10
120
125
130
135
140
145
150
9
15
0
3
6
12
T , JUNCTION TEMPERATURE (°C)
J
P
, OUTPUT POWER (dBm)
out
NOTE: The MTTF is calculated with V = 5 Vdc, I = 70 mA
CC CC
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
−20
8
V
= 5 Vdc
= 70 mA
CC
I
CC
f = 2140 MHz
−30
−40
6
4
2
0
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−50
−60
−70
V
= 5 Vdc
= 70 mA
CC
I
CC
0
1
2
3
4
2
4
6
8
10
P , OUTPUT POWER (dBm)
out
12
14
16
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-5
50 OHM APPLICATION CIRCUIT: 40-300 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
20
S21
10
0
R1
C4
C3
L1
−10
−20
C2
C1
S22
−30
−40
V
= 5 Vdc
= 70 mA
CC
S11
MMG30XX
Rev 2
I
CC
0
100
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 μF Chip Capacitors
Part Number
0603A103JAT2A
0603A102JAT2A
BK2125HM471
Manufacturer
AVX
C1, C2, C3
C4
L1
R1
1000 pF Chip Capacitor
470 nH Chip Inductor
0 W Chip Resistor
AVX
Taiyo Yuden
Panasonic
ERJ3GEY0R00V
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-6
50 OHM APPLICATION CIRCUIT: 300-3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
30
20
10
R1
S21
C4
C3
L1
0
C2
C1
−10
S22
−20
−30
V
= 5 Vdc
= 70 mA
CC
S11
MMG30XX
Rev 2
I
CC
300
800
1300
1800
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
06035A151JAT2A
0603A103JAT2A
0603A102JAT2A
HK160856NJ-T
ERJ3GEY0R00V
Manufacturer
AVX
C1, C2
C3
0.01 μF Chip Capacitor
1000 pF Chip Capacitor
56 nH Chip Inductor
0 W Chip Resistor
AVX
C4
AVX
L1
Taiyo Yuden
Panasonic
R1
MMG3009NT1
6-7
Freescale Semiconductor
RF Product Device Data
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 70 mA, TC = 255C
S
S
S
S
22
11
21
12
f
|S
|
∠ φ
|S
|
∠ φ
|S
|
∠ φ
|S |
22
∠ φ
GHz
11
21
12
0.1
0.15
0.2
0.19606
0.19734
0.19944
0.20027
0.19924
0.19543
0.19419
0.19172
0.18914
0.18788
0.18596
0.18399
0.18285
0.18159
0.18056
0.17973
0.17932
0.17920
0.17847
0.17754
0.17453
0.17205
0.17066
0.16951
0.16662
0.16577
0.16504
0.16426
0.16609
0.16661
0.16797
0.17042
0.17177
0.17361
0.17663
0.17969
0.18333
0.18634
0.18991
0.19272
0.19593
0.19925
0.20272
0.20521
0.20819
0.21027
-174.964
-176.357
169.849
168.421
166.435
164.497
162.266
160.135
158.072
156.056
154.01
6.33492
6.30368
6.27983
6.24623
6.22884
6.22675
6.21021
6.19495
6.18191
6.16313
6.14591
6.12734
6.10486
6.08449
6.06038
6.03306
6.00923
5.98147
5.95646
5.92809
5.89423
5.86296
5.83017
5.79633
5.76557
5.73189
5.69605
5.65985
5.63288
5.60045
5.56701
5.53367
5.50453
5.47270
5.43993
5.40358
5.36970
5.33711
5.30347
5.26942
5.23491
5.19782
5.15894
5.11750
5.07836
5.03981
175.897
173.26
0.10115
0.10204
0.10220
0.10243
0.10334
0.10364
0.10357
0.10351
0.10361
0.10378
0.10379
0.10396
0.10408
0.10411
0.10427
0.10440
0.10453
0.10467
0.10485
0.10508
0.10519
0.10534
0.10542
0.10564
0.10580
0.10602
0.10620
0.10641
0.10680
0.10706
0.10732
0.10761
0.10790
0.10818
0.10841
0.10863
0.10919
0.10950
0.10980
0.11012
0.11037
0.11076
0.11107
0.11132
0.11160
0.11177
-0.614
-1.587
-2.173
-2.498
-2.998
-3.636
-4.18
0.07282
0.07571
0.07648
0.08038
0.07928
0.07836
0.07876
0.07882
0.07903
0.07946
0.08061
0.08181
0.08346
0.08496
0.08717
0.08917
0.09202
0.09484
0.09809
0.10057
0.10471
0.10843
0.11227
0.11601
0.12012
0.12430
0.12842
0.13238
0.13929
0.14264
0.14623
0.14778
0.15034
0.15223
0.15382
0.15575
0.15708
0.15722
0.15781
0.15859
0.15951
0.16086
0.16242
0.16412
0.16622
0.16892
176.529
178.062
-178.213
-175.337
-172.371
-172.028
-169.383
-167.245
-165.903
-164.125
-162.978
-162.118
-161.229
-160.812
-160.896
-161.031
-161.574
-162.293
-163.293
-164.366
-165.489
-167.229
-168.9
171.036
169.018
166.867
164.532
162.42
0.25
0.3
0.35
0.4
0.45
0.5
160.278
158.065
155.935
153.778
151.629
149.511
147.384
145.27
-4.669
-5.256
-5.746
-6.277
-6.756
-7.313
-7.817
-8.376
-8.885
-9.38
0.55
0.6
0.65
0.7
152.064
150.008
148.088
146.09
0.75
0.8
0.85
0.9
144.286
142.485
140.759
139.226
137.531
136.047
134.871
133.54
143.153
141.039
138.952
136.927
134.838
132.763
130.716
128.685
126.662
124.647
122.631
120.653
118.678
116.712
114.805
112.889
110.947
109.079
107.137
105.194
103.282
101.431
99.484
0.95
1.0
-9.995
-10.462
-11.017
-11.541
-12.012
-12.612
-13.155
-13.654
-14.194
-14.728
-15.283
-15.856
-16.422
-16.914
-17.529
-18.111
-18.625
-19.165
-19.761
-20.39
-21.017
-21.621
-22.222
-22.899
-23.629
-24.273
-24.939
-25.64
-26.346
1.05
1.1
1.15
1.2
1.25
1.3
132.305
131.182
130.038
128.988
128.206
122.177
120.535
118.895
117.389
116.114
114.897
113.75
-170.51
-172.32
-174.175
-176.041
-178.197
-178.349
179.292
176.482
174.032
171.358
168.855
166.27
1.35
1.4
1.45
1.5
1.55
1.6
1.65
1.7
1.75
1.8
1.85
1.9
112.634
111.562
110.534
109.707
108.497
107.602
106.721
105.922
104.933
103.761
102.506
163.924
161.656
159.517
157.67
1.95
2.0
97.624
2.05
2.1
95.722
156.162
154.73
93.803
2.15
2.2
91.865
153.761
152.923
151.958
151.355
150.63
89.97
2.25
2.3
88.119
86.232
2.35
84.384
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-8
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S-Parameters at VCC = 5 Vdc, ICC = 70 mA, TC = 255C (continued)
S
S
S
S
22
11
21
12
f
|S
|
∠ φ
|S
|
∠ φ
|S
|
∠ φ
|S |
22
∠ φ
GHz
11
21
12
2.4
2.45
2.5
0.21179
0.21372
0.21503
0.21607
0.21693
0.21764
0.21800
0.21817
0.21833
0.21805
0.21865
0.21925
0.21915
0.22110
0.22166
0.22283
0.22458
0.22637
0.22771
0.23010
0.23244
0.23531
0.23838
0.24191
0.24470
101.509
100.321
99.084
98.079
96.937
95.679
94.585
93.428
92.207
91.061
89.888
88.748
87.532
86.342
85.246
84.227
83.152
82.137
81.039
79.979
78.98
4.99976
4.95674
4.91517
4.87557
4.83415
4.79330
4.75322
4.71387
4.67702
4.63817
4.60218
4.56625
4.53210
4.50064
4.46608
4.43647
4.40552
4.37427
4.34455
4.31085
4.28183
4.25137
4.22125
4.19033
4.15822
82.526
80.649
78.813
77.083
75.317
73.409
71.62
0.11206
0.11219
0.11247
0.11260
0.11290
0.11315
0.11317
0.11349
0.11366
0.11402
0.11435
0.11463
0.11512
0.11540
0.11582
0.11604
0.11651
0.11696
0.11740
0.11778
0.11825
0.11856
0.11892
0.11931
0.11966
-26.995
-27.627
-28.368
-29.056
-29.737
-30.261
-31.061
-31.733
-32.454
-33.132
-33.832
-34.552
-35.281
-36.033
-36.792
-37.437
-38.235
-38.955
-39.776
-40.645
-41.441
-42.323
-43.156
-43.953
-44.868
0.17307
0.17696
0.18136
0.18649
0.19209
0.19800
0.20392
0.20970
0.21628
0.22172
0.22856
0.23450
0.24044
0.24561
0.25129
0.25625
0.26146
0.26652
0.27125
0.27548
0.28049
0.28504
0.28907
0.29393
0.29797
150.179
149.454
148.699
147.675
146.671
145.149
144.12
2.55
2.6
2.65
2.7
2.75
2.8
69.917
68.159
66.317
64.555
62.873
61.144
59.382
57.613
55.954
54.104
52.337
50.582
48.824
47.09
142.804
141.065
139.329
137.508
135.667
133.457
131.639
129.229
127.153
124.84
2.85
2.9
2.95
3.0
3.05
3.1
3.15
3.2
3.25
3.3
122.578
120.071
118.04
3.35
3.4
115.642
113.247
111.227
108.97
3.45
3.5
78.054
77.028
76.08
45.379
43.528
41.795
40.059
3.55
3.6
75.139
106.843
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-9
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
Recommended Solder Stencil
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-10
PACKAGE DIMENSIONS
3
4
4.70
4.40
A
1.87
1.79
M
0.15
C A B
0.60
0.40
2X R0.15 TYP
B
1.70
1.40
°
2X 4 TYP
2.70
2.40
3
4
4.50
3.70
1.30
0.70
5
2X
1
2
3
M
0.20
C B
0.48
0.38
0.48
0.38
M
0.15
C A B
0.58
0.48
M
0.15
C A
B
0.46
0.40
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD
FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE.
4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES
OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING
ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
°
2X 4 TYP
E.P.
2X R0.20
5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
4X
0.10 C
1.35
1.25
SEATING PLANE
0.65
0.55
C
1.50
1.50
1.65
1.55
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. RF OUTPUT
CASE 1514-01
ISSUE C
BOTTOM VIEW
SOT-89
PLASTIC
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-11
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Semiconductor was negligent regarding the design or manufacture of the part.
Denver, Colorado 80217
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ Freescale Semiconductor, Inc. 2006. All rights reserved.
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MMG3009NT1
Rev. 2, 5/2006
相关型号:
MMG3010NT1
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 4.5 X 2.5 MM, 1.5 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SOT-89, CASE 1514-02, 4 PIN
NXP
MMG3013NT1
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN
NXP
©2020 ICPDF网 联系我们和版权申明