MRF6S19140HR3 [FREESCALE]
N-Channel Enhancement-Mode Lateral MOSFETs; N沟道增强模式横向的MOSFET型号: | MRF6S19140HR3 |
厂家: | Freescale |
描述: | N-Channel Enhancement-Mode Lateral MOSFETs |
文件: | 总12页 (文件大小:398K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Document Number: MRF6S19140H
Rev. 2, 7/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19140HR3
MRF6S19140HSR3
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
• Typical 2-carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA,
1990 MHz, 29 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
P
out = 29 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8
dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
CASE 465B-03, STYLE 1
NI-880
MRF6S19140HR3
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Pb-Free and RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465C-02, STYLE 1
NI-880S
MRF6S19140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
-0.5, +68
-0.5, +12
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
530
3
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
CW Operation
T
- 65 to +150
200
°C
°C
W
stg
T
J
CW
140
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 77°C, 29 W CW
R
θ
JC
°C/W
0.33
0.38
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
µAdc
µAdc
µAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 300 µAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1150 mAdc)
2.8
0.21
7.2
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3.3 Adc)
V
—
—
0.3
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 3 Adc)
g
fs
DS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
rss
—
2
—
pF
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1150 mA, P = 29 W Avg., f1 = 1930 MHz,
DD
DQ
out
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
G
15
26
—
—
—
16
27.5
-37
-51
-15
18
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
ACPR
IRL
-35
-48
-9
dBc
dBc
dB
1. Part is internally matched both on input and output.
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
2
V
SUPPLY
+
V
BIAS
C5
C9
C11
Z8
C15
B1
R5
R3
+
C13
R1
C7
C3
Z5
Z6
Z7
Z9
Z10
RF
OUTPUT
C2
Z1
Z2
Z3
Z4
RF
INPUT
C1
DUT
V
BIAS
V
SUPPLY
B2
R6
R4
C6
C10 C12
+
C14
R2
C8
C4
Z1
0.864″ x 0.082″ Microstrip
1.373″ x 0.082″ Microstrip
0.282″ x 0.900″ Microstrip
0.103″ x 0.900″ Microstrip
0.094″ x 1.055″ Microstrip
0.399″ x 1.055″ Microstrip
Z7
Z8
Z9
Z10
PCB
0.115″ x 0.569″ Microstrip
0.191″ x 0.289″ Microstrip
0.681″ x 0.081″ Microstrip
1.140″ x 0.081″ Microstrip
Z2
Z3
Z4
Z5
Z6
Arlon GX0300-55-22, 0.030″, ε = 2.5
r
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Beads, Surface Mount
Part Number
2743019447
Manufacturer
Fair-Rite
B1, B2
C1, C2
39 pF Chip Capacitors
100B390JP500X
ATC
C3, C4, C5, C6
9.1 pF Chip Capacitors
100B9R1CP500X
ATC
C7, C8, C9, C10, C11, C12
10 µF, 50 V Chip Capacitors (2220)
47 µF, 50 V Electrolytic Capacitors
470 µF, 63 V Electrolytic Capacitor
560 kΩ, 1/8 W Chip Resistors (1206)
1.0 kΩ, 1/8 W Chip Resistors (1206)
12 Ω, 1/8 W Chip Resistors (1206)
GRM55DR61H106KA88B
MVK50VC47RM8X10TP
SME63V471M12X25LL
Murata
Nippon
C13, C14
C15
United Chemi-Co
Dale/Vishay
R1, R2
R3, R4
R5, R6
Dale/Vishay
Dale/Vishay
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
3
6S19140
C13
C5
C9 C11
R3
B1 R5
C3
R1
C7
C15
C1
C2
C8
R2
R4
B2 R6
C4
C6
C10 C12
C14
Motorola, Inc.
2002 DS1464
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
20
40
η
D
18
16
14
12
10
8
30
20
10
G
ps
V
= 28 Vdc, P = 29 W (Avg.), I = 1150 mA
out DQ
DD
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
0
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
−10
−20
−40
IRL
IM3
6
4
−60
ACPR
−80
2
0
−100
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg.
18
50
η
D
16
14
12
10
40
V
= 28 Vdc, P = 75 W (Avg.), I = 1150 mA
out DQ
G
DD
ps
30
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
20
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
0
IRL
−20
−40
−60
−80
8
6
4
2
IM3
ACPR
1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 75 Watts Avg.
18
−10
V
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
DD
I
= 1700 mA
DQ
17
16
15
14
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
1500 mA
1150 mA
900 mA
I
= 1700 mA
DQ
900 mA
600 mA
600 mA
−40
−50
−60
V
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
DD
13
12
1150 mA
1500 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
400
1
10
P , OUTPUT POWER (WATTS) PEP
out
100
1000
P
, OUTPUT POWER (WATTS) PEP
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
0
58
57
Ideal
V
= 28 Vdc, P = 160 W (PEP), I = 1150 mA
out DQ
Two−Tone Measurements, Center Frequency = 1960 MHz
DD
P3dB = 53.1 dBm (204 W)
P1dB = 52.3 dBm (171 W)
56
55
54
53
52
51
50
49
48
47
46
−10
−20
−30
−40
Actual
3rd Order
5th Order
V
= 28 Vdc, I = 1150 mA
DQ
DD
7th Order
−50
−60
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 1960 MHz
0.1
1
10
100
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
50
−20
V
= 28 Vdc, I = 1150 mA
DQ
DD
IM3
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
−30
40
30
20
10
η
D
−40
ACPR
@ 0.01% Probability (CCDF)
T = 25°C
C
−50
G
ps
−60
−70
0
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
70
18
17
16
15
14
13
12
17
60
G
ps
16
V
= 32 V
DD
50
15
14
40
30
28 V
13
24 V
12
20 V
11
20
10
0
16 V
10
9
11
10
V
= 28 Vdc, I = 1150 mA
DQ
I
= 1150 mA
f = 1960 MHz
DD
η
DQ
D
f = 1960 MHz, T = 25°C
C
12 V
50
8
0
100
P , OUTPUT POWER (WATTS) CW
out
150
200
250
1
10
, OUTPUT POWER (WATTS) CW
100
300
P
out
Figure 11. Power Gain versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
10
10
9
10
8
7
10
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
N-CDMA TEST SIGNAL
100
10
0
1.2288 MHz
Channel BW
−10
−20
−IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1
−30
−40
−50
−60
−70
−80
0.1
0.01
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.001
−ACPR @ 30 kHz +ACPR @ 30 kHz
Integrated BW Integrated BW
0.0001
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
−100
Figure 13. 2-Carrier CCDF N-CDMA
−7.5 −6 −4.5 −3 −1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2-Carrier N-CDMA Spectrum
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
7
f = 2020 MHz
Z
load
Z = 5 Ω
o
f = 1900 MHz
Z
source
f = 1900 MHz
f = 2020 MHz
V
= 28 Vdc, I = 1150 mA, P = 29 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1900
1930
1960
2.27 - j3.95
2.00 - j4.24
1.72 - j3.96
1.13 - j0.67
1.11 - j0.60
1.07 - j0.46
1990
2020
1.80 - j3.51
1.69 - j3.17
1.06 - j0.30
1.01 - j0.17
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
8
NOTES
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
4
B
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X
Q
bbb
1
M
M
M
B
T A
B
(FLANGE)
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
3
INCHES
DIM MIN MAX
MILLIMETERS
K
2
MIN
33.91
13.6
MAX
34.16
13.8
A
B
1.335
0.535
0.147
0.495
0.035
0.003
1.345
0.545
0.200
0.505
0.045
0.006
D
T A
C
3.73
5.08
M
M
M
bbb
B
D
12.57
0.89
0.08
12.83
1.14
0.15
E
F
G
1.100 BSC
27.94 BSC
H
0.057
0.175
0.872
0.871
.118
0.515
0.515
0.007 REF
0.010 REF
0.015 REF
0.067
0.205
0.888
0.889
.138
1.45
4.44
22.15
19.30
3.00
13.10
13.10
0.178 REF
0.254 REF
0.381 REF
1.70
5.21
22.55
22.60
3.51
(INSULATOR)
(LID)
M
(LID)
R
K
M
M
M
M
M
M
M
M
M
M
bbb
ccc
T A
T A
B
B
ccc
T A
T A
B
N
Q
(INSULATOR)
S
N
R
0.525
0.525
13.30
13.30
S
M
M
M
aaa
B
aaa
bbb
ccc
H
C
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
SEATING
PLANE
E
T
A
A
CASE 465B-03
ISSUE D
(FLANGE)
NI-880
MRF6S19140HR3
B
B
1
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
K
2
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
T A
M
M
M
bbb
B
INCHES
DIM MIN MAX
MILLIMETERS
MIN
22.99
13.60
3.73
MAX
23.24
13.80
5.08
A
B
0.905
0.535
0.147
0.495
0.035
0.003
0.057
0.170
0.872
0.871
0.515
0.515
0.915
0.545
0.200
0.505
0.045
0.006
0.067
0.210
0.888
0.889
0.525
0.525
(LID)
R
(INSULATOR)
(LID)
M
C
D
12.57
0.89
0.08
12.83
1.14
0.15
M
M
M
ccc
T A
T A
B
M
M
M
M
M
bbb
ccc
T A
T A
B
B
E
(INSULATOR)
S
N
F
H
1.45
4.32
1.70
5.33
M
M
M
M
aaa
B
K
M
22.15
19.30
13.10
13.10
22.55
22.60
13.30
13.30
H
N
R
C
S
aaa
bbb
ccc
0.007 REF
0.010 REF
0.015 REF
0.178 REF
0.254 REF
0.381 REF
F
E
A
SEATING
T
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
(FLANGE)
CASE 465C-02
ISSUE D
NI-880S
MRF6S19140HSR3
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
11
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Document Number: MRF6S19140H
Rev. 2, 7/2005
相关型号:
MRF6S19140HR3_07
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF6S20010NR1_09
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF6S21050LR3_08
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF6S21060NBR1
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
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