MRF6S9130HSR3 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6S9130HSR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：475K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S9130H
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
MRF6S9130HR3
MRF6S9130HSR3
• Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS-95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.2 dB
880 MHz, 27 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — -48.1 dBc in 30 kHz Bandwidth
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 950 mA, Pout
130 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 18 dB
=
Drain Efficiency — 63%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 mA,
P
out = 56 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 18.5 dB
Drain Efficiency — 44%
CASE 465-06, STYLE 1
NI-780
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -75 dBc
EVM — 1.5% rms
MRF6S9130HR3
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 465A-06, STYLE 1
NI-780S
MRF6S9130HSR3
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +68
-0.5, +12
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
389
2.2
W
W/°C
C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
R
°C/W
θ
JC
0.45
0.51
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 400 μAdc)
V
V
1
2
2.1
2.9
0.22
10
3
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 950 mAdc)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 2.74 Adc)
V
—
—
0.5
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 8 Adc)
g
fs
DS
D
(3)
Dynamic Characteristics
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
66
—
—
pF
pF
oss
GS
Reverse Transfer Capacitance
C
1.6
rss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 950 mA, P = 27 W Avg. N-CDMA,
DD
DQ
out
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
18
29
—
—
19.2
30.5
-48.1
-30
21
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-46
-9
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched on input.
(continued)
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V = 28 Vdc, I = 950 mA,
DD
DQ
P
out
= 56 W Avg., 921 MHz<Frequency<960 MHz
Power Gain
G
—
—
—
—
—
18.5
44
—
—
—
—
—
dB
%
ps
Drain Efficiency
η
D
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
EVM
SR1
SR2
1.5
-63
-75
% rms
dBc
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V = 28 Vdc, I = 950 mA, P = 130 W,
DD
DQ
out
921 MHz<Frequency<960 MHz
Power Gain
G
—
18
—
—
—
—
dB
%
ps
Drain Efficiency
η
—
—
—
63
D
Input Return Loss
IRL
-12
135
dB
W
P
out
@ 1 dB Compression Point, CW
P1dB
(f = 940 MHz)
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
3
V
SUPPLY
+
+
+
+
B2
B1
C15
C17
C19
C18
C14
C16
V
BIAS
L2
Z10 Z11 Z12
+
RF
OUTPUT
C7
C6
L1
Z9
Z13
C10
Z14 Z15
Z16
Z17
RF
INPUT
C13
Z1
Z2 Z3
Z4
Z5 Z6 Z7
Z8
C9
C11
C12
C8
C1
DUT
C2
C3
C4 C5
Z1
Z2
Z3
Z4
Z5
0.383″ x 0.080″ Microstrip
1.250″ x 0.080″ Microstrip
0.190″ x 0.220″ Microstrip
0.127″ x 0.220″ Microstrip
0.173″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.620″ Taper
Z7
Z8
Z9
Z10
Z12
Z13
0.220″ x 0.630″ Microstrip
0.077″ x 0.630″ Microstrip
0.146″ x 0.630″ Microstrip
0.152″ x 0.630″ Microstrip
0.184″ x 0.220″ Microstrip
0.261″ x 0.220″ Microstrip
Z14
Z15
Z16
Z17
PCB
0.045″ x 0.220″ Microstrip
0.755″ x 0.080″ Microstrip
0.496″ x 0.080″ Microstrip
0.384″ x 0.080″ Microstrip
Arlon GX-0300-55-22, 0.030″, ε = 2.55
r
Z6, Z11
Figure 1. MRF6S9130HR3(SR3) Test Circuit Schematic
Table 5. MRF6S9130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Ferrite Beads, Short
Part Number
2743019447
Manufacturer
Fair Rite
B1, B2
C1, C13, C14
47 pF Chip Capacitors
100B470JP500X
100B8R2BP500X
27291SL
ATC
C2
8.2 pF Chip Capacitor
ATC
C3, C11
0.8-8.0 pF Variable Capacitors, Gigatrim
12 pF Chip Capacitors
Johanson
ATC
C4, C5
100B120JP500X
200B203KP50X
T491D106K035AS
100B7R5JP500X
100B110JP500X
27271SL
C6
20 K pF Chip Capacitor
ATC
C7, C16, C17, C18
10 μF, 35 V Tantalum Chip Capacitors
10 pF Chip Capacitors
Kemet
ATC
C8, C9
C10
11 pF Chip Capacitor
ATC
C12
0.6-4.5 pF Variable Capacitor, Gigatrim
0.56 μF, 50 V Chip Capacitor
470 μF, 63 V Electrolytic Capacitor
12.5 nH Inductors
Johanson
Kemet
United Chemi-Con
Coilcraft
C15
C1825C564J5GAC
SME63VB471M12X25LL
A04T-5
C19
L1, L2
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
4
C19
B2
900 MHz
Rev 02
C7
C6
C16 C17 C18
C15
C14
B1
L1
C4
C8
L2
C10
C1
C13
C2
C12
C3
C11
C5
C9
Figure 2. MRF6S9130HR3(SR3) Test Circuit Component Layout
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
20
34
19.5
19
32
30
28
26
18.5
18
η
V
= 28 Vdc, P = 27 W (Avg.)
D
DD out
= 950 mA, N−CDMA IS−95 Pilot, Sync,
I
DQ
Paging, Traffic Codes 8 Through 13
G
ps
17.5
17
−44
−46
−48
−5
IRL
−15
−25
16.5
16
ACPR
−50
−52
−54
−35
−45
15.5
15
−55
840
850
860
870
880
890
900
910
920
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 27 Watts Avg.
20
19.5
19
47
44
41
η
D
38
18.5
18
35
V
= 28 Vdc, P = 54 W (Avg.)
out
= 950 mA, N−CDMA IS−95 Pilot, Sync
DD
G
ps
I
DQ
−34
−36
−38
−40
−5
17.5
17
Paging, Traffic Codes 8 Through 13
−10
IRL
−15
−20
−25
16.5
16
ACPR
15.5
15
−42
−44
−30
840
850
860
870
880
890
900
910
920
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 54 Watts Avg.
20
−10
I
= 1400 mA
V
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
DQ
DD
1100 mA
950 mA
−20
−30
−40
19
18
17
I
= 500 mA
DQ
700 mA
700 mA
500 mA
16
15
−50
−60
V
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
DD
1400 mA
100
1100 mA
950 mA
1
10
100
400
1
10
P , OUTPUT POWER (WATTS) PEP
out
400
P , OUTPUT POWER (WATTS) PEP
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
0
56
55.5
55
V
= 28 Vdc, P = 130 W (PEP), I = 950 mA
out DQ
Two−Tone Measurements
DD
Ideal
P3dB = 52.54 dBm (179.47 W)
−10
−20
−30
(f1 + f2)/2 = Center Frequency of 880 MHz
3rd Order
54.5
54
53.5
53
P1dB = 51.8 dBm (151.36 W)
52.5
52
5th Order
7th Order
Actual
−40
−50
51.5
51
V
DD
= 28 Vdc, I = 950 mA
DQ
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
50.5
50
−60
31 31.5 32 32.5 33 33.5 34 34.5 35 35.5 36 36.5 37
0.1
1
10
100
−30
P , INPUT POWER (dBm)
in
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
20
70
60
60
V
DD
= 28 Vdc, I = 950 mA, f = 880 MHz
DQ
N−CDMA IS−95, Pilot, Sync, Paging
Traffic Codes 8 Through 13
19
18
17
16
15
50
40
30
20
−35
−40
−45
−50
G
ps
50
40
30
20
G
ps
V
I
= 28 Vdc
= 950 mA
DD
10
0
−55
−60
ACPR
14
13
DQ
10
0
η
D
η
D
f = 880 MHz
1
10
, OUTPUT POWER (WATTS) CW
100
300
1
10
, OUTPUT POWER (WATTS) AVG.
100 150
P
P
out
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 9. Single-Carrier N-CDMA ACPR, Power
Gain and Drain Efficiency versus Output Power
20
19.5
19
18.5
18
17.5
17
32 V
28 V
16.5
16
24 V
15.5
20 V
15
14.5
14
16 V
I
= 950 mA
f = 880 MHz
DQ
V
DD
= 12 V
0
50
100
150
200
250
P , OUTPUT POWER (WATTS) CW
out
Figure 11. Power Gain versus Output Power
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
9
10
8
10
7
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
.
.
. .
..
.
.
.
.
.
.
.
. . ..
.. . ..
.. . .. ..
.
. .
.
. .
. . . .
.
.
.
. .
.
.
.
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.
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.
.
.
.
.
.
1
.
−40
.
.
.
.
.
.
.
.
.
.
.
.
−50
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
.
.
.
0.1
0.01
.
.
.
..
.
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
.
.
..
. .
.
.
.
.
.
.
.
.
. .
. ..
. . .
.
. .
−60
−70
−80
.. .
.
.
...
. .
.
.
.
.
..
.
.
..
.
.
. ..
. .
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..
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..
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..
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..
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..
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..
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..
..
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..
..
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..
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.
.
..
.
.
.. .
..
..
0.001
..
.
..
.
.
.
.. .
.
..
.
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
.
.
.
.
.
. .
..
.
.
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. .
.
.....
.
. .
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. ..
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...
.
.. .
..
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....
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..
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..
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..
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.
−90 .
.
0.0001
0
2
4
6
8
10
−100
PEAK−TO−AVERAGE (dB)
−110
Figure 13. Single-Carrier CCDF N-CDMA
−3.6 −2.9 −2.2 −1.5 −0.7
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 14. Single-Carrier N-CDMA Spectrum
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
8
f = 910 MHz
Z
load
f = 850 MHz
Z = 2 Ω
o
f = 910 MHz
Z
source
f = 850 MHz
V
DD
= 28 Vdc, I = 950 mA, P = 27 W Avg.
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
850
865
880
895
910
0.89 - j1.18
0.87 - j1.03
0.85 - j0.89
0.83 - j0.75
0.84 - j0.64
1.50 - j0.09
1.52 + j0.11
1.55 + j0.31
1.60 + j0.51
1.68 + j0.71
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
B
aaa
B
ccc
T A
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465-06
ISSUE G
NI-780
MRF6S9130HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−−
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0.040
0.030
(LID)
C
N
(LID)
R
D
M
M
M
ccc
T A
B
M
M
M
M
E
ccc
T A
T A
B
F
(INSULATOR)
S
H
(INSULATOR)
M
K
M
M
M
M
M
aaa
B
bbb
T A
B
M
N
H
R
S
C
U
3
Z
−−−
−−−
F
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
SEATING
PLANE
E
A
T
A
STYLE 1:
(FLANGE)
PIN 1. DRAIN
2. GATE
5. SOURCE
CASE 465A-06
ISSUE H
NI-780S
MRF6S9130HSR3
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
11
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Document Number: MRF6S9130H
Rev. 4, 5/2006
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