MRF6S9160HSR3 [FREESCALE]
RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs); 射频功率场效应晶体管（ N沟道增强模式横向的MOSFET ）
| 型号： | MRF6S9160HSR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs) |
| 文件： | 总12页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S9160H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
MRF6S9160HR3
MRF6S9160HSR3
• Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1200 mA, Pout = 35 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth
880 MHz, 35 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 76 Watts Avg., Full Frequency Band (865-895 MHz)
Power Gain — 20 dB
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = -66 dBc
Spectral Regrowth @ 600 kHz Offset = -75 dBc
EVM — 2% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout
160 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
=
CASE 465-06, STYLE 1
NI-780
MRF6S9160HR3
Drain Efficiency — 58%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
CASE 465A-06, STYLE 1
NI-780S
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
MRF6S9160HSR3
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +68
-0.5, +12
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
565
3.2
W
W/°C
C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
R
°C/W
θ
JC
0.31
0.33
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 525 μAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1200 mAdc, Measured in Functional Test)
3
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3.6 Adc)
V
0.1
—
0.2
9.7
0.3
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 8 Adc)
g
fs
DS
D
(3)
Dynamic Characteristics
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
80.2
2.2
—
—
pF
pF
oss
GS
Reverse Transfer Capacitance
C
rss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1200 mA, P = 35 W Avg. N-CDMA,
DD
DQ
out
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
20
29
—
—
20.9
30.5
-46.8
-17
23
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-45
-9
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched on input.
(continued)
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V = 28 Vdc, I = 1200 mA,
DD
DQ
P
out
= 76 W Avg., 865 MHz<Frequency<895 MHz
Power Gain
G
—
—
—
—
—
20
45
2
—
—
—
—
—
dB
%
ps
Drain Efficiency
η
D
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
EVM
SR1
SR2
% rms
dBc
dBc
-66
-75
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V = 28 Vdc, I = 1200 mA, P = 160 W,
DD
DQ
out
921 MHz<Frequency<960 MHz
Power Gain
G
—
20
—
—
—
—
dB
%
ps
Drain Efficiency
η
—
—
—
58
D
Input Return Loss
IRL
-12
160
dB
W
P
out
@ 1 dB Compression Point, CW
P1dB
(f = 940 MHz)
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
3
B2
V
V
BIAS
SUPPLY
B1
R2
+
+
C21
C22
C24
C23
C20
R1
L2
C16 C17 C18
C19
RF
OUTPUT
C7
C8
C9
L1
Z9
Z10
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18
Z19
RF
INPUT
C5
C6
C2
Z1
Z2
Z3 Z4
Z5
Z6 Z7
Z8
C10
C11 C12
C15
C13 C14
C1
DUT
C3
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.426″ x 0.080″ Microstrip
0.813″ x 0.080″ Microstrip
0.471″ x 0.080″ Microstrip
0.319″ x 0.220″ Microstrip
0.171″ x 0.220″ Microstrip
0.200″ x 0.425″ x 0.630″ Taper
0.742″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.128″ x 0.630″ Microstrip
0.134″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
0.066″ x 0.630″ Microstrip
0.630″ x 0.425″ x 0.220″ Taper
0.120″ x 0.220″ Microstrip
0.292″ x 0.220″ Microstrip
0.023″ x 0.220″ Microstrip
0.030″ x 0.220″ Microstrip
0.846″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
0.434″ x 0.080″ Microstrip
PCB Arlon GX-0300-55-22, 0.030″, ε = 2.55
r
Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic
Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Ferrite Beads, Small
Part Number
2743019447
Manufacturer
Fair Rite
B1, B2
C1, C2, C19
C3, C11
C4
47 pF Chip Capacitors
100B470JP500X
27291SL
ATC
0.8-8.0 pF Variable Capacitors, Gigatrim
2.7 pF Chip Capacitor
Johanson
ATC
100B2R7JP500X
100B150JP500X
100B120JP500X
100B4R3JP500X
100B8R2JP500X
100B3R9JP500X
27271SL
C5, C6
C7, C8
C9, C10
C12
15 pF Chip Capacitors
ATC
12 pF Chip Capacitors
ATC
4.3 pF Chip Capacitors
ATC
8.2 pF Chip Capacitor
ATC
C13, C14
C15
3.9 pF Chip Capacitors
ATC
0.6-4.5 pF Variable Capacitor, Gigatrim
22 pF Chip Capacitor
Johanson
ATC
C16
100B220JP500X
T491C105K0J0AS
CDR353P203AK0S
100B181JP500X
GRM55DR61H106KA88B
KME63VB471M12x25LL
0603HC
C17
1 μF, 50 V Tantalum Capacitor
20K pF Chip Capacitor
Kemit
C18
Kemit
C20
180 pF Chip Capacitor
ATC
C21, C22, C23
10 μF, 50 V Chip Capacitors (2220)
470 μF, 63 V Electrolytic Capacitor
10 nH Inductors
Murata
United Chemi-Con
Coilcraft
C24
L1, L2
R1
180 Ω Chip Resistor
R2
10 Ω Chip Resistor
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
4
C24
C16
B1
B2
900 MHz
Rev. 2
C18
C19
C22 C23
C21
C20
R2
C17
R1
L1
L2
C7 C9
C5
C6
C14
C1
C2
C15
C13
C4
C3
C12
C11
C8
C10
Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
20.9
32
30
28
26
24
η
D
20.6
20.3
20
G
ps
19.7
19.4
19.1
18.8
18.5
18.2
17.9
V
= 28 Vdc, P = 35 W (Avg.)
out
= 1200 mA, N−CDMA IS−95 (Pilot, Sync,
DD
I
DQ
−40
−45
−50
−5
Paging, Traffic Codes 8 Through 13)
−8
−11
ACPR
ALT1
−55
−60
−65
−14
−17
IRL
−20
840
850
860
870
880
890
900
910
920
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 35 Watts Avg.
20.3
44
η
20
19.7
19.4
19.1
18.8
18.5
18.2
17.9
17.6
17.3
D
42
40
38
36
G
ps
V
DD
= 28 Vdc, P = 70 W (Avg.)
out
= 1200 mA, N−CDMA IS−95 (Pilot, Sync,
I
DQ
−30
−36
−42
−48
−3
−6
−9
Paging, Traffic Codes 8 Through 13)
ACPR
IRL
−12
−15
ALT1
850
−54
−60
−18
840
860
870
880
890
900
910
920
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 70 Watts Avg.
23
−10
V
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
DD
22
21
20
19
18
17
I
= 1800 mA
−20
−30
−40
−50
1500 mA
DQ
I
= 600 mA
1200 mA
900 mA
DQ
900 mA
1500 mA
1800 mA
600 mA
1200 mA
−60
−70
V
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
16
15
DD
1
10
100
400
1
10
P , OUTPUT POWER (WATTS) PEP
out
100
400
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
−10
−20
−30
−40
−50
−60
−70
−80
0
V
= 28 Vdc, I = 1200 mA
DQ
V
= 28 Vdc, P = 70 W (Avg.)
out
= 1200 mA, Two−Tone Measurements
DD
DD
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
I
DQ
−10
−20
(f1 + f2)/2 = Center Frequency of 880 MHz
−30 3rd Order
3rd Order
−40
5th Order
−50
5th Order
7th Order
7th Order
−60
0.1
1
10
100
400
1
10
100
P , OUTPUT POWER (WATTS) PEP
out
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Ideal
61
59
P6dB = 54.7 dBm (294.78 W)
P3dB = 53.98 dBm (249.98 W)
P1dB = 53.02 dBm (200.36 W)
57
55
53
51
49
47
Actual
V
DD
= 28 Vdc, I = 1200 mA
DQ
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
26
28
30
32
34
36
38
40
P , INPUT POWER (dBm)
in
Figure 9. Pulse CW Output Power versus
Input Power
60
−20
V
= 28 Vdc, I = 1200 mA
DQ
T = −30_C
DD
C
25_C
f = 880 MHz, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
50
40
30
20
−30
−40
−50
−60
85_C
25_C
−30_C
85_C
ACPR
−30_C
G
ps
η
D
85_C
10
0
−70
−80
25_C
ALT1
1
10
, OUTPUT POWER (WATTS) AVG.
100
300
P
out
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
23
70
60
−30_C
85_C
22
21
20
19
18
G
ps
T = −30_C
C
50
40
30
20
10
0
25_C
85_C
η
D
V
DD
= 28 Vdc
= 1200 mA
17
16
I
DQ
f = 880 MHz
1
10
, OUTPUT POWER (WATTS) CW
100
300
P
out
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21
20
19
18
17
16
32 V
28 V
20 V
24 V
16 V
= 12 V
I = 1200 mA
DQ
f = 880 MHz
V
DD
0
50
100
150
200
250
300
P , OUTPUT POWER (WATTS) CW
out
Figure 12. Power Gain versus Output Power
10
10
9
10
8
10
10
7
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
8
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
.
.
. .
..
.
.
.
.
..
.
.
.
. . ..
..
.. . .. ..
.
.
.
. .
. . . .
.
.
.
. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1
.
−40
−50
−60
−70
−80
.
.
.
.
.
.
.
.
.
.
.
.
.
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
.
.
.
0.1
0.01
.
.
.
..
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
.
.
..
. .
.
.
.
.
.
.
.
.
. .
. ..
. . .
. .
.. .
.
.
.. .
. .
.
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.
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..
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.
..
.
.
. ..
. .
.
.
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..
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..
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..
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..
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..
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..
..
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.
..
..
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..
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.
.
..
.
.
.. .
..
..
0.001
..
.
..
.
.
.
.. .
.
..
.
..
.
.
.
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
.
.
.
.
.
. .
.
. .
.
.....
.
.
.
.
.
.
.
. ..
. .
. ..
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.
...
.
.. .
..
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....
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..
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..
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.
.
.
.
−90 .
.
0.0001
0
2
4
6
8
10
−100
PEAK−TO−AVERAGE (dB)
−110
Figure 14. Single-Carrier CCDF N-CDMA
−3.6 −2.9 −2.2 −1.5 −0.7
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
9
f = 910 MHz
f = 850 MHz
Z
load
Z = 2 Ω
o
f = 910 MHz
Z
source
f = 850 MHz
V
DD
= 28 Vdc, I = 1200 mA, P = 35 W Avg.
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
850
865
880
895
910
0.61 - j1.27
0.66 - j1.15
0.64 - j1.05
0.55 - j0.90
0.48 - j0.74
1.20 + j0.03
1.26 + j0.15
1.31 + j0.22
1.32 + j0.28
1.26 + j0.32
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9160HR3 MRF6S9160HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
B
aaa
B
ccc
T A
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
CASE 465-06
ISSUE G
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
NI-780
MRF6S9160HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−−
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0.040
0.030
(LID)
C
N
(LID)
R
D
M
M
M
ccc
T A
B
M
M
M
M
E
ccc
T A
T A
B
F
(INSULATOR)
S
H
(INSULATOR)
M
K
M
M
M
M
M
aaa
B
bbb
T A
B
M
N
H
R
S
C
U
3
Z
−−−
−−−
F
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
SEATING
PLANE
E
A
T
CASE 465A-06
ISSUE H
A
STYLE 1:
(FLANGE)
PIN 1. DRAIN
2. GATE
5. SOURCE
NI-780S
MRF6S9160HSR3
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
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Document Number: MRF6S9160H
Rev. 1, 5/2006
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