MRF6V10250HSR3 [FREESCALE]

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET; 射频功率场效应晶体管N沟道增强模式横向MOSFET


型号：	MRF6V10250HSR3
厂家：	Freescale
描述：	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 射频功率场效应晶体管N沟道增强模式横向MOSFET 晶体晶体管功率场效应晶体管射频
文件：	总10页 (文件大小：363K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Document Number: MRF6V10250HS

Rev. 0, 2/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

RF Power transistor designed for applications operating at frequencies

between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

use in pulsed applications.

MRF6V10250HSR3

• Typical Pulsed Performance: V_DD= 50 Volts, I_DQ= 250 mA,

_out= 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec,

Duty Cycle = 10%

1090 MHz, 250 W, 50 V

PULSED

Power Gain — 21 dB

Drain Efficiency — 60%

LATERAL N-CHANNEL

RF POWER MOSFET

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak

Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 50 V_DDOperation

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +100

-6.0, +10

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

DSS

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

200

°C

Table 2. Thermal Characteristics

Characteristic

(1,2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 250 W Pulsed, 100 μsec Pulse Width, 10% Duty Cycle

0.10

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

2 (Minimum)

B (Minimum)

IV (Minimum)

Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate-Source Leakage Current

—

100

—

500

—

nAdc

Vdc

GSS

(V = 5 Vdc, V = 0 Vdc)

Drain-Source Breakdown Voltage

(V = 0 Vdc, I = 100 mA)

(BR)DSS

Zero Gate Voltage Drain Leakage Current

(V = 50 Vdc, V = 0 Vdc)

μAdc

DSS

Zero Gate Voltage Drain Leakage Current

—

(V = 90 Vdc, V = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 528 μAdc)

1.8

2.4

Vdc

GS(th)

GS(Q)

DS(on)

Gate Quiescent Voltage

(V = 50 Vdc, I = 250 mAdc, Measured in Functional Test)

Drain-Source On-Voltage

(V = 10 Vdc, I = 1.32 Adc)

—

0.25

—

(1)

Dynamic Characteristics

Reverse Transfer Capacitance

(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

—

0.8

340

280

—

rss

Output Capacitance

(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

oss

Input Capacitance

iss

(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 250 mA, P = 250 W Peak (25 W Avg.), f = 1090 MHz,

out

Pulsed, 100 μsec Pulse Width, 10% Duty Cycle

Power Gain

—

-9

Drain Efficiency

Input Return Loss

IRL

-12

1. Part internally matched both on input and output.

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

SUPPLY

C12

C15

C13

C14

BIAS

OUTPUT

Z10

INPUT

C10

C8 C9

C11

DUT

C4 C5

0.40″ x 0.080″ Microstrip

1.29″ x 0.080″ Microstrip

0.22″ x 0.480″ Microstrip

Z5, Z6

Z10

PCB

0.625″ x 0.300″ Microstrip

0.430″ x 0.080″ Microstrip

Arlon CuClad 250GX-0300-55-22, 0.030″, ε = 2.55

Z2*, Z9*

Z3*, Z8*

Z4, Z7

0.22″ x 0.625″ x 0.220″ Taper

* Line length includes microstrip bends

Figure 1. MRF6V10250HSR3 Test Circuit Schematic

Table 5. MRF6V10250HSR3 Test Circuit Component Designations and Values

Part

Description

Part Number

ATC100B241JT500XT

ATC100B1R8CT500XT

ATC100B3R3CT500XT

ATC100B5R1CT500XT

ATC100B390JT500XT

C1825C225J5RAC

ATC100B4R7CT500XT

EKME633ELL471MK25S

A02TKLC

Manufacturer

ATC

240 pF Chip Capacitor

C2, C9, C11

1.8 pF Chip Capacitors

3.3 pF Chip Capacitor

ATC

C4, C5

5.1 pF Chip Capacitors

39 pF Chip Capacitors

2.2 μF, 50 V Chip Capacitors

4.7 pF Chip Capacitor

ATC

C6, C10, C12

ATC

C7, C15

Kemet

ATC

C13, C14

470 μF, 63 V Electrolytic Capacitors

5 nH, 2 Turn Inductor

Multicomp

Coilcraft

Freescale

Vishay

7 nH, Hand Wound

2T, 18awg

10 Ω, 1/4 W Chip Resistor

20 Ω, 1 W Chip Resistor

CRCW120610R0FKEA

CRCW251220R0FKEA

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

C13

C14

C15

C12

C10

C11

MRF6V10250H Rev. 3

Figure 2. MRF6V10250HSR3 Test Circuit Component Layout

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

1000

100

oss

iss

Measured with 30 mV(rms)ac @ 1 MHz

= 0 Vdc

T = 150°C

T = 175°C

rss

T = 200°C

T = 25°C

0.1

100

300

, DRAIN−SOURCE VOLTAGE (VOLTS)

Figure 3. Capacitance versus Drain-Source Voltage

Figure 4. DC Safe Operating Area

P3dB = 54.94 dBm (311 W)

P1dB = 54.55 dBm (285 W)

Ideal

Actual

= 50 Vdc, I = 250 mA, f = 1090 MHz

Pulse Width = 100 μsec, Duty Cycle = 10%

100

, OUTPUT POWER (WATTS) PULSED

400

P , INPUT POWER (dBm) PULSED

out

Figure 5. Pulsed Power Gain and Drain Efficiency

versus Output Power

Figure 6. Pulsed Output Power versus

Input Power

= 1 A

750 mA

500 mA

250 mA

50 V

45 V

40 V

35 V

= 50 Vdc, f = 1090 MHz

= 30 V

= 250 mA, f = 1090 MHz

Pulse Width = 100 μsec, Duty Cycle = 10%

Pulse Width = 100 μsec

Duty Cycle = 10%

100

400

100

, OUTPUT POWER (WATTS) PULSED

400

, OUTPUT POWER (WATTS) PULSED

out

Figure 8. Pulsed Power Gain versus

Output Power

Figure 7. Pulsed Power Gain versus

Output Power

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

400

300

200

100

T = −30_C

25_C

85_C

T = −30_C

25_C

85_C

55_C

= 50 Vdc

= 250 mA

f = 1090 MHz

Pulse Width = 100 μsec

Duty Cycle = 10%

= 50 Vdc, I = 250 mA, f = 1090 MHz

Pulse Width = 100 μsec, Duty Cycle = 10%

100

, OUTPUT POWER (WATTS) PULSED

400

P , INPUT POWER (WATTS) PULSED

out

Figure 9. Pulsed Power Output versus

Power Input

Figure 10. Pulsed Power Gain and Drain Efficiency

versus Output Power

110

130

150

170

190

210

230

250

T , JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours when the device

is operated at V = 50 Vdc, P = 250 W Peak, Pulse Width = 100 μsec,

out

Duty Cycle = 10%, and η = 60%.

MTTF calculator available at http:/www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 11. MTTF versus Junction Temperature

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

Z = 10 Ω

f = 1090 MHz

load

f = 978 MHz

source

f = 1090 MHz

= 50 Vdc, I = 250 mA, P = 250 W Peak

DQ out

load

source

MHz

978

1.67 - j2.04

2.39 - j2.23

3.26 - j3.72

4.3 - j2.72

5.66 - j2.42

5.85 - j2.39

1030

1090

Test circuit impedance as measured from

gate to ground.

source

Test circuit impedance as measured

from drain to ground.

load

Output

Matching

Network

Device

Under

Test

Input

Matching

Network

source

load

Figure 12. Series Equivalent Source and Load Impedance

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

4X U

(FLANGE)

4X Z

(LID)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DELETED

4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

2X K

(FLANGE)

INCHES

DIM MIN MAX

MILLIMETERS

bbb

T A

MIN

20.45

9.65

3.18

12.57

0.89

0.08

1.45

4.32

19.61

9.27

−−−

MAX

20.70

9.91

4.32

12.83

1.14

0.15

1.70

5.33

20.02

9.53

9.52

1.02

0.76

0.805

0.380

0.125

0.495

0.035

0.003

0.057

0.170

0.774

0.772

0.365

−−− 0.040

−−− 0.030

0.005 REF

0.010 REF

0.015 REF

0.815

0.390

0.170

0.505

0.045

0.006

0.067

0.210

0.786

0.788

0.375

(LID)

ccc

T A

ccc

T A

(INSULATOR)

aaa

bbb

T A

−−−

aaa

bbb

ccc

0.127 REF

0.254 REF

0.381 REF

SEATING

PLANE

STYLE 1:

PIN 1. DRAIN

2. GATE

5. SOURCE

(FLANGE)

CASE 465A-06

ISSUE H

NI-780S

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

Feb. 2008

• Initial Release of Data Sheet

MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

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MRF6V10250HSR3

RF Device Data

Freescale Semiconductor

Document Number: MRF6V10250HS

1^R0^{ev. 0, 2/2008}

MRF6V10250HSR3 [FREESCALE]

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