SUD25N15 [FREESCALE]
N-Channel 150 V (D-S) 175 °C MOSFET; N沟道150 V( D- S) 175 ℃的MOSFET![SUD25N15](http://pdffile.icpdf.com/pdf1/p00193/img/icpdf/SUD25N_1090080_icpdf.jpg)
型号: | SUD25N15 |
厂家: | ![]() |
描述: | N-Channel 150 V (D-S) 175 °C MOSFET |
文件: | 总7页 (文件大小:597K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
PWM Optimized
VDS (V)
RDS(on) (Ω)
ID (A)
25
0.052 at VGS = 10 V
0.060 at VGS = 6 V
150
23
100 % Rg Tested
APPLICATIONS
TO-252
•
Primary Side Switch
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD25N15-52-E3 (Lead (Pb)- free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
150
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TC = 25 °C
25
Continuous Drain Current (TJ = 175 °C)b
ID
TC = 125 °C
14.5
50
IDM
IS
Pulsed Drain Current
A
Continuous Source Current (Diode Conduction)
Avalanche Current
25
IAR
EAR
25
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
L = 0.1 mH
TC = 25 °C
TA = 25 °C
31
mJ
W
136b
3a
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
15
Maximum
Unit
t ≤ 10 s
18
50
Junction-to-Ambienta
RthJA
Steady State
40
°C/W
RthJC
Junction-to-Case (Drain)
0.85
1.1
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
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SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
150
2
V
Gate Threshold Voltage
Gate-Body Leakage
4
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 150 V, VGS = 0 V
IDSS
VDS = 150 V, VGS = 0 V, TJ = 125 °C
Zero Gate Voltage Drain Current
On-State Drain Currentb
50
250
µA
A
V
DS = 150 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
ID(on)
50
VGS = 10 V, ID = 5 A
0.042
0.052
0.109
0.145
0.060
V
V
GS = 10 V, ID = 5 A, TJ = 125 °C
GS = 10 V, ID = 5 A, TJ = 175 °C
Drain-Source On-State Resistanceb
Forward Transconductanceb
RDS(on)
Ω
V
GS = 6 V, ID = 5 A
0.047
40
gfs
VDS = 15 V, ID = 25 A
S
Dynamica
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
1725
216
100
33
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
40
Qgs
Qgd
Rg
VDS = 75 V, VGS = 10 V, ID = 25 A
9
nC
12
1
3
Ω
td(on)
tr
td(off)
tf
15
70
25
60
25
100
40
90
V
DD = 50 V, RL = 3 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω
Source-Drain Diode Ratings and Characteristics TC = 25 °C
ISM
VSD
trr
Pulsed Current
Diode Forward Voltageb
50
1.5
140
A
V
IF = 25 A, VGS = 0 V
0.9
95
IF = 25 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
30
20
10
0
50
40
30
20
10
0
V
GS
= 10 V thru 7 V
6 V
T
= 125 °C
25 °C
C
5 V
- 55 °C
6
4 V
0
1
2
3
4
5
7
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
60
50
40
30
20
10
0
0.10
0.08
0.06
0.04
0.02
0.00
25 °C
T
= - 55 °C
C
125 °C
V
GS
= 6 V
V
GS
= 10 V
0
10
20
30
40
50
0
10
20
- Drain Current (A)
D
30
40
50
I
- Drain Current (A)
I
D
Transconductance
On-Resistance vs. Drain Current
2500
2000
1500
1000
500
20
16
12
8
V
D
= 75 V
DS
= 25 A
I
C
iss
4
C
rss
C
oss
0
0
0
30
60
90
120
150
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
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SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
100
V
D
= 10 V
GS
= 5 A
I
2.5
2.0
1.5
1.0
0.5
0.0
T = 150 °C
J
10
T = 25 °C
J
1
0
0.3
0.6
0.9
1.2
- 50 - 25
0
25
50
75 100 125 150 175
V
SD
- S o urce-to-Drain Voltage (V)
T - J unction Temperature (°C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS
30
25
20
15
10
5
100
10
1
10 µs
Limited by R
DS(on)*
100 µs
1 ms
10 ms
100 ms
1 s, DC
T
= 25 °C
C
Single Pulse
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
T
- Case Temperature (°C)
V
DS
- Drain-to-Source Voltage (V)
C
* V > minimum V at which R is specified
DS(on)
Maximum Avalanche Drain Current
vs. Case Temperature
GS
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
30
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SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
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requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements
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provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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