SUD50P08-25L [FREESCALE]
P-Channel 80V (D-S) 175 °C MOSFET; P沟道80V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD50P08-25L |
| 厂家： | 
Freescale |
| 描述： | P-Channel 80V (D-S) 175 °C MOSFET |
| 文件： | 总7页 (文件大小：594K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50P08-25L
P-Channel
0V (D-S) 175 °C MOSFET
8
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
Qg (Typ)
I
D (A)a
- 50
RoHS
0.0252 at VGS = - 10 V
0.029 at VGS = - 4.5 V
COMPLIANT
- 80
55 nC
- 47
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 80
20
V
VGS
- 50a
- 42.5a
- 12.5b, c
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 175 °C)
ID
- 10.5b, c
A
IDM
IS
Pulsed Drain Current
- 40
- 50a
TC = 25 °C
Continuous Source-Drain Diode Current
- 6.9b, c
- 45
101
TA = 25 °C
IAS
Avalanche Current
L = 0.1 mH
TC = 25 °C
EAS
Single-Pulse Avalanche Energy
mJ
W
136
TC = 70 °C
95
PD
Maximum Power Dissipation
8.3b, c
5.8b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
RthJA
t ≤ 10 sec
15
18
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
0.85
1.1
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 °C/W.
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SUD50P08-25L
P-Channel
0V (D-S) 175 °C MOSFET
8
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 80
V
V
DS Temperature Coefficient
- 73
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 5.5
VDS = VGS, ID = - 250 µA
- 1
- 3
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 80 V, VGS = 0 V
VDS = - 80 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = - 10 V
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
- 10
VGS = - 10 V, ID = - 12.5 A
VGS = - 4.5 V, ID = - 10.5 A
VDS = - 15 V, ID = - 12.5 A
0.021
0.024
52
0.0252
0.029
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4700
320
235
105
55
VDS = - 40 V, VGS = 0 V, f = 1 MHz
pF
VDS = - 40 V, VGS = - 10 V, ID = - 12.5 A
160
85
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = - 40 V, VGS = - 4.5 V, ID = - 12.5 A
16
Gate-Drain Charge
26
Gate Resistance
f = 1 MHz
4
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
45
70
330
145
165
25
Rise Time
220
95
VDD = - 40 V, RL = 3.8 Ω
ID ≅ - 10.5 A, VGEN = - 10 V, Rg = 1 Ω
ns
Turn-Off Delay Time
Fall Time
110
15
Turn-On Delay Time
Rise Time
25
40
V
DD = - 40 V, RL = 3.8 Ω
ns
A
ID ≅ - 10.5 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
105
100
160
150
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
- 50
- 40
- 1.2
85
IS = - 10.5 A
- 0.8
55
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
110
37
165
IF = - 10.5 A, di/dt = 100 A/µs, TJ = 25 °C
ns
tb
18
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD50P08-25L
P-Channel
0V (D-S) 175 °C MOSFET
8
TYPICAL CHARACTERISTICS 25 °C unless noted
20
16
12
8
40
V
GS
= 10 thru 4 V
35
30
25
20
15
10
5
T
A
= 125 °C
25 °C
4
0
3 V
- 55 °C
3.0 3.5
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.026
8000
7000
6000
5000
4000
3000
2000
1000
0
0.025
0.024
0.023
0.022
0.021
0.020
V
GS
= 6 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
10
8
I
D
= 12.5 A
I
D
= 12.5 A
V
GS
= 10 V
V
DS
= 64 V
6
V
DS
= 40 V
V
GS
= 6 V
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
20
40
60
80
100
120
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
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SUD50P08-25L
P-Channel
0V (D-S) 175 °C MOSFET
8
TYPICAL CHARACTERISTICS 25 °C unless noted
0.05
0.04
40
T
A
= 125 °C
T
J
= 150 °C
10
0.03
0.02
0.01
T
= 25 °C
A
T
= 25 °C
J
1
0.00
2
3
4
5
6
7
- Gate-to-Source Voltage (V)
GS
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
V
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
35
30
I
= 250 µA
D
25
20
15
10
5
0
- 50 - 25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
100 µs
*Limited by
DS(on)
r
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
0.01
dc
T
= 25 °C
A
Single Pulse
0.001
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
*V > minimum V
GS
at which r is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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SUD50P08-25L
P-Channel
0V (D-S) 175 °C MOSFET
8
TYPICAL CHARACTERISTICS 25 °C unless noted
140
120
100
80
60
50
40
Package Limited
30
20
10
0
60
40
20
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating
Current Derating*
100
10
L · I
D
T
A
=
BV - V
DD
1
0.000001
0.00001
0.0001
0.001
0.01
T
A
- Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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SUD50P08-25L
P-Channel
0V (D-S) 175 °C MOSFET
8
TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-2
-1
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
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SUD50P08-25L
P-Channel
0V (D-S) 175 °C MOSFET
8
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