FTK10N80PD [FS]
10.0 Amps, 800 Volts N-Channel MO S-FET;
| 型号： | FTK10N80PD |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 10.0 Amps, 800 Volts N-Channel MO S-FET |
| 文件： | 总7页 (文件大小：1003K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK10N80P/F/DD
TECHNICAL DATA
10.0 Amps, 800 Volts N-Channel MOS-FET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
P :
1
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supply electronic lamp ballasts
TO-220
F :
1
based on half bridge topology.
TO-220F
FEATURES
* RDS(ON) = 1.15Ω@VGS = 10V
* Fast switching capability
* Avalanche energy tested
DD :
1
* Improved dv/dt capability, high ruggedness
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK10N80P
FTK10N80F
FTK10N80DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignmen:
G: Gate
D: Drain
S: Source
2016. 07. 05
Revision No : 0
1/7
FTK10N80P/F/DD
(
TC = 25˚C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
800
±30
10
VGSS
Gate-Source Voltage
V
IAR
Avalanche Current (Note 1)
A
TC = 25°C
10
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
TC = 100°C
6.0
36
IDM
EAS
A
Single Pulse(Note 2)
920
17
mJ
mJ
Repetitive Limited by TJ(MAX)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
W
TC = 25°C
142 / 65
1.14 / 0.38
+150
Power Dissipation (TO-220,TO-263/ TO-220F)
PD
Derate above 25°C
W / ˚C
TJ
Junction Temperature
˚C
˚C
TSTG
-55 ~ +150
Operating and Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
MIN
TYP
MAX
62.5
UNIT
θJA
TO-220, TO-263
TO-220F
θJc
θJc
˚C / W
0.88
1.93
ELECTRICAL CHARACTERISTICS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250µA
800
V
10
µA
Drain-Source Leakage Current
Gate-Body Leakage Current
VDS = 800V, VGS = 0V
IGSSF
IGSSR
VGS = 30V, VDS = 0V
Forward
Reverse
100
nA
nA
VGS = -30V, VDS = 0V
-100
ID = 250µA, Referenced to
25°C
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
0.99
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID =5.0A
2.0
4.0
V
Ω
S
Static Drain-Source On-Resistance
1.15
0.92
5.5
VDS = 40V, ID = 3.5A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
2800
230
20
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
60
ns
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
V
DD =400V,I
D
= 9.4A, R
G
= 25Ω
150
120
120
58
ns
ns
(Note 4,5)
ns
QG
nC
nC
V
DS = 640V,I =9.4A,VGS = 10V
D
QGS
17.5
(Note 4,5)
QGD
Gate-Drain Charge
22
nC
2016. 07. 05
Revision No : 0
2/7
FTK10N80P/F/DD
(TJ
=
˚C ,
Otherwise specified.)
unless
25
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
IS
V
GS = 0 V, I = 10A
S
Drain-Source Diode Forward Voltage
1.4
10
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
36
A
tRR
VGS = 0 V, IS = 10A,
Reverse Recovery Time
650
7.0
ns
QRR
dIF/dt =100 A/µs (Note 4)
Reverse Recovery Charge
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17.3mH, IAS = 10A, VDD = 50V, R = 25 Ω, Starting T = 25°C
3. ISD μs, VDD ≤ BVDSS, Starting TJ = 25°C
G
J
≤ 9.4A, di/dt ≤ 300A/
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2016. 07. 05
Revision No : 0
3/7
FTK10N80P/F/DD
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Top :
101
101
150oC
Bottom : 5.5 V
55oC
25oC
100
100
-1
2. TC = 25
101
1. VDS = 50V
8
10
-1
10
-1
2
4
6
10
10
100
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
101
VGS = 10V
VGS = 20V
100
150
25
1. VGS = 0V
J = 25
-1
10
0
5
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
4000
3500
3000
2500
2000
1500
1000
500
12
10
8
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
VDS = 160V
VDS = 400V
C
iss
VDS = 640V
6
Coss
4
1. VGS = 0 V
2. f = 1 MHz
2
C
rss
* Note : ID = 9.4A
0
0
10
-1
0
10
20
30
40
50
60
70
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2016. 07. 05
Revision No : 0
4/7
FTK10N80P/F/DD
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
* Notes :
1. VGS = 10 V
1. VGS = 0 V
2. ID
0.5
2. ID = 4.7 A
0.0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
8
Operation in This Area
is Limited by R DS(on)
102
101
100
10
s
100
s
1 ms
10 ms
100 ms
DC
6
4
-1
10
* Notes :
1. TC = 25 o
2
C
2. TJ = 150 o
C
3. Single Pulse
-2
0
25
10
100
101
102
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0 5
0.2
* Notes :
1. Z JC(t) = 1.93 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z JC(t)
0.1
-1
10
0 05
0 02
0 01
PDM
t1
single pu se
-2
10
t2
-5
-4
-3
-2
10
-1
10
10
10
10
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
2016. 07. 05
Revision No : 0
5/7
FTK10N80P/F/DD
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2016. 07. 05
Revision No : 0
6/7
FTK10N80P/F/DD
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2016. 07. 05
Revision No : 0
7/7
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